MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-H • • • • • IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, AC servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 53.5 43.3 8 5.3 8 E 9 14 36.5 9 B C C R6 φ5.3 8 M4 B 33 3.5 7 3.5 4.5 22 24 E LABEL Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A –IC Collector reverse current DC (forward diode current) 30 A PC Collector dissipation TC=25°C 250 W IB Base current DC 1.8 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 300 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M4 — Mounting torque Mounting screw M5 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N·m 10~15 kg·cm 1.47~1.96 N·m 15~20 kg·cm 90 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=30A (diode forward voltage) — — 1.85 V hFE DC current gain IC=30A, VCE=2V/5V 75/100 — — — — — 1.5 µs Switching time VCC=300V, IC=30A, IB1=–IB2=0.6A — — 12 µs — — 3.0 µs Transistor part — — 0.5 °C/ W Diode part — — 2.0 °C/ W Conductive grease applied — — 0.15 °C/ W IC=30A, IB=0.4A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 100 DC CURRENT GAIN hFE 80 IB=2.0A 60 IB=1.0A IB=0.5A 40 IB=0.3A IB=0.1A 20 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 10 0 7 5 4 3 2 1.4 1.8 2.2 BASE-EMITTER VOLTAGE 10 2 7 5 4 3 2 2.6 3.0 10 0 7 5 4 3 2 2 1 0 10 –2 IC=20A 2 3 4 5 7 10 –1 VCE(sat) 10 –1 10 0 IC=30A 2 3 4 5 7 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 3 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) 5 4 2 3 4 5 7 10 1 10 1 7 IB=0.4A Tj=25°C 5 Tj=125°C 4 3 VBE(sat) 2 VBE (V) Tj=25°C Tj=125°C Tj=25°C Tj=125°C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) IC=10A VCE=2.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) Tj=25°C VCE=2.0V 10 –1 1.0 VCE=5.0V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 3 7 5 4 3 2 10 1 10 0 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 1 7 5 4 3 2 ts VCC=300V IB1=–IB=0.6A 10 0 7 5 4 3 2 10 –1 10 0 ton tf Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 VCC=300V IB1=0.6A IC=30A Tj=25°C Tj=125°C ts tf 10 0 7 5 4 3 10 –1 70 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 3 2 REVERSE BIAS SAFE OPERATING AREA 60 50 30 20 10 0 2 3 4 5 7 10 1 100 200 300 400 500 600 700 10 s 10 0 7 5 3 2 TC=25°C NON–REPETITIVE 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 70 60 50 COLLECTOR DISSIPATION 40 30 20 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) 80 10 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR-EMITTER VOLTAGE DERATING FACTOR (%) s s 10 1 7 5 3 2 SECOND BREAKDOWN AREA 90 0µ 0µ C 1m D VCE (V) DERATING FACTOR OF F. B. S. O. A. 100 50 COLLECTOR CURRENT IC (A) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA Zth (j–c) (°C/ W) –3A –5A 40 Tj=125°C 2 3 4 5 7 10 0 BASE REVERSE CURRENT –IB2 (A) 10 2 7 5 3 2 IB2=–1A 10 2 7 5 4 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25°C Tj=125°C 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 Tj=25°C Tj=125°C VCC=300V IB1=–IB2=0.6A 10 1 trr (µs) 500 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Irr 10 0 10 0 7 5 Qrr 3 trr 2 –1 10 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 2.0 Zth (j–c) (°C/ W) 1.6 1.2 0.8 0.4 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999