MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H • • • • • IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 80 23 23 φ6.5 10.5 13 10.5 34 23 B2 E2 (7) C1 B2 E2 C2E1 C2E1 E2 C1 E2 E1 B1 12 E1 B1 Tab#110, t=0.5 (8) LABEL 22.5 31 6.5 M5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A –IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25°C 400 W IB Base current DC 3 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 210 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.5 V –VCEO Collector-emitter reverse voltage –IC=50A (diode forward voltage) — — 1.8 V hFE DC current gain IC=50A, VCE=2.8V/5V 75/100 — — — — — 2.5 µs Switching time VCC=600V, IC=50A, IB1=–IB2=1A — — 15 µs — — 3.0 µs Transistor part (per 1/2 module) — — 0.31 °C/ W Diode part (per 1/2 module) — — 1.2 °C/ W Conductive grease applied (per 1/2 module) — — 0.15 °C/ W IC=50A, IB=1A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 2 IB=2.0A DC CURRENT GAIN hFE 80 VCE=5.0V IB=1.0A IB=0.5A 60 IB=0.3A 40 IB=0.1A 20 0 0 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE 5.0 VCE=2.8V Tj=25°C 10 0 7 5 4 3 2 10 –1 1.6 2.0 2.4 2.8 BASE-EMITTER VOLTAGE 10 2 7 5 4 3 2 10 0 3.2 3.6 101 7 5 4 3 2 2 3 4 5 7 10 1 2 3 4 5 7 10 2 VBE(sat) 10 0 VCE(sat) 7 5 4 3 IB=1.0A 2 Tj=25°C 10 –1 10 0 VBE (V) Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=30A 4.0 IC=50A IC=20A 3.0 2.0 1.0 Tj=25°C Tj=125°C 2 3 4 5 7 10 –1 ton, ts, tf (µs) 5.0 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25°C Tj=125°C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 0 VCE=2.8V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 3 7 5 4 3 2 VCE (V) SATURATION VOLTAGE Tj=25°C COLLECTOR CURRENT IC (A) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 2 3 4 5 7 10 0 BASE CURRENT IB (A) 10 1 7 5 4 3 2 ts VCC=600V IB1=–IB2=1A 10 0 7 5 4 3 2 10 0 tf ton Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 160 SWITCHING TIME ts, tf (µs) 2 10 1 7 5 4 3 2 COLLECTOR CURRENT IC (A) 3 ts tf VCC=600V IB1=1A 7 IC=50A Tj=25°C 5 4 Tj=125°C 3 10 –1 2 3 4 5 7 10 0 10 0 120 BASE REVERSE CURRENT –IB2 (A) 80 60 20 200 400 600 1000 800 VCE (V) DERATING FACTOR OF F. B. S. O. A. 100 TC=25°C NON–REPETITIVE 50µS DC 1mS 10 1 7 5 3 2 SECOND BREAKDOWN AREA 90 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 0 COLLECTOR-EMITTER VOLTAGE DERATING FACTOR (%) COLLECTOR CURRENT IC (A) 10 2 7 5 3 2 IB2=–3A 40 FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=–1A 100 0 2 3 4 5 7 10 1 Tj=125°C 140 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (°C) 0.4 0.8 1.2 1.6 Tj=25°C Tj=125°C 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 Irr Tj=25°C Tj=125°C VCC=600V IB1=–IB2=1A 10 1 trr (µs) 500 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Qrr 10 0 10 0 7 5 3 2 trr 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 2.0 1.8 Zth (j–c) (°C/ W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –12 3 4 5 7 10 0 TIME (s) Feb.1999