MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM300HC-M • • • • IC Collector current ........................ 300A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 100 Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 φ5.5 20 C E E B 48 22 62 B 8 64 E 25 M6 5.5 8 21 LABEL 27 M4 22 BX 25 12 12 E 16 BX Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 350 V VCEX Collector-emitter voltage VEB=2V 350 V VCBO Collector-base voltage Emitter open 400 V VEBO Emitter-base voltage Collector open 10 V IC Collector current DC 300 A –IC Collector reverse current DC (forward diode current) 300 A PC Collector dissipation TC=25°C 1250 W IB Base current DC 10 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 3000 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute B(E) terminal screw M4 BX terminal screw M4 — Mounting torque Main terminal screw M6 Mounting screw M5 — Typical value Weight ELECTRICAL CHARACTERISTICS — V 0.98~1.47 N·m 10~15 kg·cm 0.98~1.47 N·m 10~15 kg·cm 1.96~2.94 N·m 20~30 kg·cm 1.47~1.96 N·m 15~20 kg·cm 420 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=350V, VEB=2V — — 2.0 mA ICBO Collector cutoff current VCB=400V,Emitter open — — 2.0 mA IEBO Emitter cutoff current VEB=10V — — 600 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=300A (diode forward voltage) — — 1.85 V hFE DC current gain IC=300A, VCE=2V 100 — — — — — 2.0 µs Switching time VCC=200V, IC=300A, IB1=–IB2=6A — — 10 µs — — 3.0 µs Transistor part — — 0.1 °C/ W Diode part — — 0.25 °C/ W Conductive grease applied — — 0.05 °C/ W IC=300A, IB=3.0A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 400 IB=6.0A DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) Tj=25°C IB=3.0A 300 IB=1.5A 200 IB=0.6A 100 0 IB=0.3A 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE=2.0V Tj=25°C 1.6 1.8 2.0 BASE-EMITTER VOLTAGE 10 2 7 5 4 3 2 2.2 2.4 3 2 IC=400A IC=300A IC=200A IC=100A 0 10 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) 2 3 45 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 VCE(sat) 4 3 IB=3.0A 2 Tj=25°C Tj=125°C 10 –1 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 4 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 7 10 1 VBE (V) Tj=25°C Tj=125°C 1 Tj=25°C Tj=125°C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=2.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 –1 1.4 VCE=5.0V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 3 7 5 4 3 2 10 1 SATURATION VOLTAGE 500 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 ts ton tf Tj=25°C Tj=125°C VCC=200V IB1=–IB2=6.0A 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 2 800 10 0 7 5 4 3 2 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) Tj=125°C 10 1 7 5 4 3 2 ts tf VCC=200V IC=300A IB1=6A Tj=25°C Tj=125°C 3 4 5 7 10 0 2 3 4 5 7 10 1 700 600 500 300 200 100 0 2 3 BASE REVERSE CURRENT –IB2 (A) 10 1 7 5 3 2 TC =25°C NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 DERATING FACTOR (%) 10 2 7 5 3 2 SECOND BREAKDOWN AREA 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.10 0.08 0.06 0.04 0.02 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR CURRENT IC (A) s C D µs 200 s 1m m 10 100µs VCE (V) 100 90 COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 50 100 150 200 250 300 350 400 DERATING FACTOR OF F. B. S. O. A. tw=50µs TIME (s) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=–6A 400 10 3 7 5 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.2 Tj=25°C Tj=125°C 0.6 1.0 1.4 1.8 2.2 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3200 2800 Irr (A), Qrr (µc) 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 VCC=200V 5 IB1= –IB2=6A 3 Tj=25°C 2 Tj=125°C Irr 10 2 7 5 3 Qrr 2 10 2 10 1 trr (µs) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 1 10 0 7 5 trr 3 2 10 –1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 0.4 Zth (j–c) (°C/ W) 0.3 0.2 0.1 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999