MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM600HD-M • • • • IC Collector current ........................ 600A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 500 Non-Insulated Type APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 φ5.5 C E 48 B 62 E 22 20 80 E 8 B 17 BX E BX 14 12 22 25 M4 5.5 8 21 LABEL 27 M6 25 64 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 350 V VCEX Collector-emitter voltage VEB=2V 350 V VCBO Collector-base voltage Emitter open 400 V VEBO Emitter-base voltage Collector open 10 V IC Collector current DC 600 A –IC Collector reverse current DC (forward diode current) PC Collector dissipation TC=25°C IB Base current –ICSM Surge collector reverse current (forward diode current) Tj Tstg Viso Isolation voltage Parameter — A 2080 W DC 15 A Peak value of one cycle of 60Hz (half wave) — A Junction temperature –40~+150 °C Storage temperature –40~+125 °C Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M5 — Mounting torque B(E) terminal screw M4 BX terminal screw M4 — Typical value Weight ELECTRICAL CHARACTERISTICS — V 1.96~2.94 N·m 20~30 kg·cm 1.47~1.96 N·m 15~20 kg·cm 0.98~1.47 N·m 10~15 kg·cm 0.98~1.47 N·m 10~15 kg·cm 420 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=350V, VEB=2V — — 2.0 mA ICBO Collector cutoff current VCB=400V, Emitter open — — 2.0 mA IEBO Emitter cutoff current VEB=10V — — 800 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=600A (diode forward voltage) — — — V hFE DC current gain IC=600A, VCE=2V 500 — — — — — 3.0 µs Switching time VCC=200V, IC=600A, IB1=2A, –IB2=4A — — 15 µs — — 3.0 µs Transistor part — — 0.06 °C/ W Diode part — — — °C/ W Conductive grease applied — — 0.05 °C/ W IC=600A, IB=1.2A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 1000 1.0A DC CURRENT GAIN hFE IB=2.0A 800 0.4A 600 0.2A 400 0.08A 200 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 –1 7 5 4 3 2 1.4 1.6 1.8 2.0 BASE-EMITTER VOLTAGE 2.2 10 1 7 5 4 3 2 10 0 7 5 4 3 2 VCE(sat) 10 –1 10 1 IC=600A 2 1 IC=400A 0 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) IB=1.2A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 3 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25°C Tj=125°C 710 2 VBE(sat) VBE (V) 5 IC=200A 2 3 45 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=2.0V Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.0V Tj=25°C 10 –2 1.2 10 3 7 5 4 3 2 VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 1 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 2 7 5 3 2 10 1 ts 7 5 3 2 VCC=200V IB1=2.0A –IB2=4.0A tf 10 0 Tj=25°C ton 7 Tj=125°C 5 3 2 10 –1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2 3 4 5 7 10 4 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 2000 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 3 2 ts 10 1 7 5 4 3 2 10 0 7 5 4 3 tf VCC=200V IB1=2A IC=600A Tj=25°C Tj=125°C 3 4 5 7 10 0 2 3 4 5 7 10 1 1600 1400 1200 BASE REVERSE CURRENT –IB2 (A) 600 400 200 200 300 400 500 VCE (V) DERATING FACTOR OF F. B. S. O. A. s 1m s m 10 C TC =25°C NON–REPETITIVE SECOND BREAKDOWN AREA 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE DERATING FACTOR (%) tw=100µs D COLLECTOR CURRENT IC (A) 100 90 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE 100 10 3 7 5 3 2 6A 800 FORWARD BIAS SAFE OPERATING AREA 10 4 7 5 3 2 –IB2=4A 1000 0 2 3 Tj=125°C 1800 VCE (V) 0 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE TC (°C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.08 0.07 Zth (j–c) (°C/ W) 0.06 0.05 0.04 0.03 0.02 0.01 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999