MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM75TX-HB • • • • • IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 14 86 (N)– 20 74±0.25 14 B6 B4 B2 0 62.5 –0.2 20 (P)+ B5 B3 B1 W (10) 18.5 V U 11–M4 10.5 68 8 18.5 18.5 18.5 (10) 10 4–φ5.4±0.1 80±0.25 94 P (+) 13 28.2 24.8 13 B3 U B2 2 4 7 LABEL 26 B1 B4 B5 V W B6 N (–) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 75 A –IC Collector reverse current DC (forward diode current) 75 A PC Collector dissipation TC=25°C 350 W IB Base current DC 4.5 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 750 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M4 — Mounting torque Mounting screw M5 B(E) terminal screw M4 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N·m 10~15 kg·cm 1.47~1.96 N·m 15~20 kg·cm 0.98~1.47 N·m 10~15 kg·cm 520 g (Tj=25°C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V, Collector open — — 150 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.0 V –VCEO Collector-emitter reverse voltage IC=–75A (diode forward voltage) — — 1.8 V hFE DC current gain IC=75A, VCE=2.5V 750 — — — — — 2.0 µs Switching time VCC=300V, IC=75A, IB1=150mA, –IB2=1.5A — — 8.0 µs — — 3.0 µs Transistor part (per 1/6 module) — — 0.35 °C/ W Diode part (per 1/6 module) — — 1.3 °C/ W Conductive grease applied (per 1/6 module) — — 0.2 °C/ W IC=75A, IB=100mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 2 200 DC CURRENT GAIN hFE 160 IB=200mA IB=100mA 120 IB=50mA 80 IB=20mA IB=10mA 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE=2.5V Tj=25°C 10 –1 7 5 4 3 2 10 –2 2.0 2.4 2.8 3.2 3.6 BASE-EMITTER VOLTAGE 4.0 VBE (V) IC=75A IC=50A IC=30A 1 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 ton, ts, tf (µs) 3 BASE CURRENT IB (A) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 VBE(sat) VCE(sat) 10 0 7 5 4 3 2 10–1 10 0 IB=100mA Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25°C Tj=125°C 4 2 Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 10 3 7 5 4 3 2 VCE=2.5V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 VCE=5.0V 10 4 7 5 4 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 1 VCC=300V 7 IB1=150mA 5 IB2=–1.5A 4 3 2 ts 10 0 7 5 tf 4 3 ton 2 Tj=25°C Tj=125°C 10–1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 160 VCC=300V IB1=150mA IC=75A COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts 10 0 7 5 4 3 2 tf Tj=25°C Tj=125°C 10–1 10 0 2 3 45 7 10 1 2 3 45 7 140 120 100 IB2=–2.0A 80 IB2=–3.5A 60 40 20 Tj=125°C 0 10 2 BASE REVERSE CURRENT –IB2 (A) 0 100 200 300 400 500 600 700 800 COLLECTOR-EMITTER VOLTAGE 10 3 7 5 3 2 100 100µs 5 1m 00 s µs m s D 10 C 10 1 7 5 3 2 TC=25°C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 70 60 COLLECTOR DISSIPATION 50 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2 3 5 7 10 2 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 10 0 TIME (s) DERATING FACTOR (%) tw=50µs COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) SECOND BREAKDOWN AREA 90 10 2 7 5 3 2 DERATING FACTOR OF F. B. S. O. A. 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA VCE (V) 10 2 7 5 4 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25°C Tj=125°C 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 Tj=25°C Tj=125°C Irr Qrr 10 1 trr (µs) 10 2 7 5 3 2 800 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 7 t rr 5 VCC=300V 3 IB1=150mA 2 IB2=–1.5A 10 –1 10 –1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 710 1 2 3 4 5 7 2.0 Zth (j–c) (°C/ W) 1.6 1.2 0.8 0.4 0 10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 10 0 TIME (s) Feb.1999