MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM20KD-HB • • • • • IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders. OUTLINE DRAWING & CIRCUIT DIAGRAM 11 11 11 12.5 10.5 10.5 18.5 Tab#250, t=0.8 S W 42 18 V U 30 BuP BvP BwP K P A T 2–φ5.5 9 R6 Dimensions in mm N BuN BvN BwN R 18 18 15 Tab#110, t=0.5 8 93 K P (23.6) 15 LABEL 6.5 (24.45) 110 R S T A BuP BvP BwP U V W BuN BvN BwN N Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Inverter part, Tj=25°C) Parameter Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 20 A –IC Collector reverse current DC (forward diode current) 20 A PC Collector dissipation TC=25°C 83 W IB Base current DC 1 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 200 A ABSOLUTE MAXIMUM RATINGS Symbol Conditions (Converter part, Tj=25°C) Parameter Conditions Ratings Unit VRRM Repetitive peak reverse voltage 800 V VRSM Non-repetitive peak reverse voltage 900 V Ea Recommended AC input voltage 220 V IO DC output current Three phase full wave rectifying circuit, Tc=79°C 30 A IFSM Surge (non-repetitive) forward current One half cycle at 60 Hz, peak value 300 A I2t I2t for fusing Value for one cycle of surge current 375 A2s ABSOLUTE MAXIMUM RATINGS (Common) Parameter Ratings Unit Tj Junction temperature –40~150 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Symbol Conditions Charged part to case, AC for 1 minute — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol 2500 V 1.47~1.96 N·m 15~20 kg·cm 125 g (Inverter part, Tj=25°C) Test conditions Parameter Limits Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 40 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=20A (diode forward voltage) — — 1.5 V hFE DC current gain IC=20A, VCE=2V 250 — — — — — 1.5 µs Switching time VCC=300V, IC=20A, IB1=120mA,–IB2=0.4A — — 12 µs — — 2.0 µs Transistor part (per 1/6 module) — — 1.5 °C/ W Diode part (per 1/6 module) — — 2.5 °C/ W Conductive grease applied — — 0.35 °C/ W IC=20A, IB=80mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) ELECTRICAL CHARACTERISTICS Symbol (Converter part, Tj=25°C) Parameter Test conditions Limits Min. Typ. Max. Unit IRRM Repetitive peak reverse current VR=VRRM, Tj=150°C — — 5.0 VFM Forward voltage IF=30A — — 1.3 V Rth (j-c) Thermal resistance Junction to case — — 0.9 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied — — 0.35 °C/ W mA Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 2 40 DC CURRENT GAIN hFE IB=400mA Tj=25°C IB=200mA IB=80mA 30 IB=40mA 20 IB=20mA 10 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0 7 5 4 3 2 VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) VCE=2.0V Tj=25°C 10 –1 7 5 4 3 2 10 –2 1.0 1.4 1.8 2.2 2.6 BASE-EMITTER VOLTAGE 3.0 2 1 0 10 –2 IC=15A IC=20A 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 2 10 1 IB=80mA 7 Tj=25°C 5 Tj=125°C 4 3 2 VBE(sat) 10 0 7 5 4 3 2 VCE(sat) 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=25A 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) 5 3 Tj=25°C Tj=125°C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=2.0V 10 2 7 5 4 3 2 10 0 VBE (V) Tj=25°C Tj=125°C VCE=5.0V 10 3 7 5 4 3 2 COLLECTOR CURRENT IC (A) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 50 3 2 10 1 7 5 4 3 2 Tj=25°C Tj=125°C VCC=300V IB1=120mA IB2=–400mA ts tf 10 0 7 5 ton 4 3 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 50 Tj=25°C Tj=125°C 10 1 7 5 4 3 2 VCC=300V IB1=120mA IC=20A ts 10 0 7 5 4 3 10 –1 tf 2 3 4 5 7 10 0 Tj=125°C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 3 2 REVERSE BIAS SAFE OPERATING AREA 40 BASE REVERSE CURRENT –IB2 (A) 20 10 DERATING FACTOR (%) s 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR CURRENT IC (A) 80 70 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2.0 Zth (j–c) (°C/ W) SECOND BREAKDOWN AREA 90 µs COLLECTOR-EMITTER VOLTAGE VCE (V) DERATING FACTOR OF F. B. S. O. A. 50 0µ s 20 10 0 7 5 3 2 TC=25°C 10 –1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 TIME (s) 100 200 300 400 500 600 700 800 100 100µs 1m s 5m s m 10 DC 10 1 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 TC=25°C 5 NON-PEPETITIVE 3 2 IB2=–3A 30 0 2 3 4 5 7 10 1 IB2=–0.5A TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 Tj=25°C 7 Tj=125°C 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 4 3 2 10 2 VCC=300V IB1=120mA IB2=–400mA Tj=25°C Tj=125°C Irr 10 0 7 5 4 3 2 10 –1 10 0 Qrr 10 1 trr (µs) 200 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 2 3 4 5 7 10 1 10 0 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 3.2 2.8 Zth (j–c) (°C/ W) 2.4 2.0 1.6 1.2 0.8 0.4 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –12 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES (Converter parts) 10 3 7 5 3 2 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 500 Tj=25°C SURGE (NON-REPETITIVE) FOWARD CURRENT IFSM (A) FORWARD CURRENT IF (A) MAXIMUM FORWARD CHARACTERISTIC 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.8 1.2 1.6 2.0 FORWARD VOLTAGE 2.4 400 300 200 100 0 10 0 VF (V) 160 TC (°C) RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE P (W) POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 80 60 40 20 0 0 8 16 24 DC OUTPUT CURRENT 32 IO (A) 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60HZ) MAXIMUM POWER DISSIPATION 100 2 3 4 5 7 10 1 40 RESISTIVE, INDUCTIVE LOAD 140 120 100 80 60 0 8 16 24 DC OUTPUT CURRENT 32 40 IO (A) Feb.1999