MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H • • • • • IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC chopper, DC motor controllers, Inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 20 20 E1 27 A1 C1 D2 φ6.5 10.5 13 10.5 34 (E2Y) (7) 80 D1 E1 B1 12 B1 Tab#110, t=0.5 E1 (E3Y) D2 (8) LABEL D1 22.5 31 6.5 M5 C1 E1 K1 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Transistor part including D1, Tj=25°C) Parameter Conditions Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 75 A –IC Collector reverse current DC (forward diode current) 75 A PC Collector dissipation TC=25°C 350 W IB Base current DC 4.5 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 750 A ABSOLUTE MAXIMUM RATINGS Symbol (Diode part (D2), Tj=25°C) Ratings Unit VRRM Repetitive peak reverse voltage Parameter 600 V VRSM Non-repetitive peak reverse voltage 720 V VR (DC) DC reverse voltage 480 V IDC DC current DC circuit, resistive, inductive load 75 A IFSM Surge (non-repetitive) forward current Peak value of one cycle of 60Hz (half wave) I2t I2t for fusing Value for one cycle of surge current ABSOLUTE MAXIMUM RATINGS Conditions 1500 A 9.45 × 103 A2s (Common) Parameter Ratings Unit Tj Junction temperature –40~150 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Symbol Conditions Charged part to case, AC for 1 minute Main terminal screw M5 — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 210 g (Transistor part including D1, Tj=25°C) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=75A (diode forward voltage) — — 1.85 V hFE DC current gain IC=75A, VCE=2V/5V 75/100 — — — — — 2.5 µs Switching time VCC=300V, IC=75A, IB1=–IB2=1.5A — — 12 µs — — 3.0 µs Transistor part — — 0.35 °C/ W Diode part — — 1.3 °C/ W Conductive grease applied — — 0.15 °C/ W IC=75A, IB=1A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS Symbol (Diode part (D2), Tj=25°C) Parameter Limits Test conditions Min. Typ. Max. Unit mA IRRM Repetitive peak reverse current VR=VRRM, Tj=150°C — — 1.0 VFM Forward voltage IF=75A — — 1.5 V trr Reverse recovery time — — 0.9 µs Qrr Reverse recovery charge — — 30 µC Rth (j-c) Thermal resistance Junction to case — — 0.6 °C/ W Rth (c-f) Contact thermal resistance Conductive grease applied (case to fin) — — 0.15 °C/ W IF=75A, di/dt=–150A/µs, VR=300V, Tj=150°C PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 2 160 IB=1.5A DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) 200 IB=2.0A 120 IB=1.0A IB=0.5A 80 40 Tj=25°C 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 10 1 7 5 4 3 2 10 –1 1.0 VCE=2.0V Tj=25°C 1.4 1.8 2.2 BASE-EMITTER VOLTAGE 2.6 VBE (V) 3.0 VCE=2.0V Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE (V) SATURATION VOLTAGE 0 VCE=5.0V 10 3 7 5 4 3 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 10 1 VBE(sat) VCE(sat) IB=1A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=100A 3 IC=30A 2 1 IC=75A IC=50A Tj=25°C Tj=125°C ton, ts, tf (µs) 4 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 0 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 ts 10 1 7 5 4 3 2 VCC=300V IB1=–IB2=1.5A Tj=25°C Tj=125°C 10 0 7 5 4 3 2 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 2 IC (A) 160 10 1 7 5 4 3 2 ts tf 10 0 7 5 4 3 2 10 –1 VCC=300V IB1=1.5A IC=75A Tj=25°C Tj=125°C 2 3 4 5 7 10 0 COLLECTOR CURRENT IC (A) ts, tf (µs) SWITCHING TIME 2 3 4 5 7 10 1 REVERSE BIAS SAFE OPERATING AREA 2 IB2=–2A 120 40 Tj=125°C 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 –5A 80 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT –IB2 (A) 0 200 400 DERATING FACTOR OF F. B. S. O. A. 100 SECOND BREAKDOWN AREA 90 tw=50µs 100µs 5 1m 00 s µs m s D 10 C 10 1 7 5 3 2 NON-REPETITIVE 10 0 TC=25°C 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) DERATING FACTOR (%) COLLECTOR CURRENT IC (A) ton COLLECTOR CURRENT SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 3 2 tf 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE TC (°C) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 0.5 Zth (j-c) (°C/W) 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) PERFORMANCE CURVES (Diode part (D1)) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 Tj=25°C Tj=125°C 0 0.4 0.8 1.2 FORWARD VOLTAGE 1.6 IFSM (A) MAXIMUM SURGE CURRENT 800 SURGE FORWARD CURRENT FORWARD CURRENT IF (A) FORWARD CHARACTERISTICS (TYPICAL) 600 2.0 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 1.6 10 0 trr 10 –1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) Zth (j-c) (°C/W) Qrr trr (µs) Irr (A), Qrr (µc) 300 TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 2.0 Irr 2 3 4 5 7 10 1 400 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 10 1 7 5 4 3 2 10 0 10 0 500 VF (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10 2 7 VCC=300V 5 IB1=–IB2=1.5A Tj=25°C 4 Tj=125°C 3 2 700 1.2 0.8 0.4 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –12 3 4 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES (Diode part (D2)) 10 3 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 1.0 Tj=25°C 0.8 10 2 7 5 3 2 Zth (j–c) (°C/W) 10 1 7 5 3 2 10 0 1.0 1.4 1.8 2.2 FORWARD VOLTAGE VF (V) 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) MAXIMUM SURGE CURRENT REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL) 10 2 7 VR=300V 5 di/dt=–150A/µs Tj=25°C 3 Tj=150°C 2 2000 1800 1600 1400 Irr (A), Qrr (µC) IFSM (A) 0.4 0.2 0.6 SURGE FORWARD CURRENT 0.6 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 10 2 Irr Qrr 10 1 7 5 3 2 10 0 7 5 3 2 10 1 trr (µs) FORWARD CURRENT IF (A) MAXIMUM FORWARD CHARACTERISTIC 10 0 trr 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) 10 2 7 VR=300V 5 IF=75A 3 Tj=25°C 2 Tj=150°C 10 1 7 5 3 2 Irr 10 2 Qrr 10 1 trr (µs) Irr (A), Qrr (µC) REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL) 10 0 10 0 7 5 trr 3 2 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 di/dt (A/µs) Feb.1999