MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-2HB • • • • • IC Collector current ...................... 1000A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 145 19 28 9 37 28 8–φ6.5 27 42 39 25 BX E E 47 74 BX C B 74 51 73 163 E B C 44.5 47MAX. 3–M4 16 3 16 3 34 3 34 LABEL E 65 2–M8 45 65 8 27 50MAX. 9 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current –IC PC Parameter Conditions 7 V DC 1000 A Collector reverse current DC (forward diode current) 1000 A Collector dissipation TC=25°C 7000 W IB Base current DC 50 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 10000 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M8 Mounting screw M6 — Mounting torque B(E) terminal screw M4 BX terminal screw M4 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 8.85~10.8 N·m 90~110 kg·cm 1.96~2.94 N·m 20~30 kg·cm 0.98~1.47 N·m 10~15 kg·cm 0.98~1.47 N·m 10~15 kg·cm 2100 g (Tj=25°C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V — — 8.0 mA ICBO Collector cutoff current VCB=1000V,Emitter open — — 8.0 mA IEBO Emitter cutoff current VEB=7V, Collector open — — 400 mA VCE (sat) Collector-emitter saturation voltage — — 4.0 V VBE (sat) Base-emitter saturation voltage — — 4.2 V –VCEO Collector-emitter reverse voltage IC=–1000A (diode forward voltage) — — 1.8 V hFE DC current gain IC=1000A, VCE=4.0V 750 — — — — — 2.5 µs Switching time VCC=600V, IC=1000A, IB1=2A, –IB2=20A — — 20 µs — — 7.0 µs Transistor part — — 0.018 °C/ W Diode part — — 0.07 °C/ W Conductive grease applied — — 0.01 °C/ W IC=1000A, IB=1.33A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) IB=1.33A IB=4A DC CURRENT GAIN hFE IB=0.5A Tj=25°C 800 IB=250mA 600 400 200 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 2.6 3.0 3.4 3.8 BASE-EMITTER VOLTAGE 4.2 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) 10 0 VCE(sat) 7 5 4 3 IB=1.33A Tj=25°C 2 Tj=125°C 10 –1 10 1 VBE (V) 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=1000A 4 3 2 IC=800A IC=600A 1 Tj=25°C Tj=125°C 0 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 2 3 5 7 10 1 BASE CURRENT IB (A) ton, ts, tf (µs) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VCE=4.0V Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=4V Tj=25°C 10 –1 2.2 10 3 7 5 4 3 2 VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 1 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 1000 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 ts tf ton Tj=25°C Tj=125°C 7 5 4 3 2 VCC=600V IB1=2A –IB2=20A 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT 2 3 IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 2400 ts 2 tf 10 1 7 5 3 2 10 0 7 5 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 3 VCC=600V IC=1000A IB1=2A Tj=25°C Tj=125°C 10 0 2 3 5 7 10 1 1600 BASE REVERSE CURRENT –IB2 (A) Tj=125°C IB=–20A 1200 800 400 0 5 7 10 2 2 3 2000 0 800 1000 1200 VCE (V) SECOND BREAKDOWN AREA 90 100µs 200µs 50µs 1ms DC 10 2 7 5 3 2 TC =25°C NON-REPETITIVE 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 0.016 0.012 0.008 0.004 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 710 0 TIME (s) 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.02 Zth (j–c) (°C/ W) 600 100 DERATING FACTOR (%) 10 3 7 5 3 2 400 DERATING FACTOR OF F. B. S. O. A. 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA 10 4 7 5 3 2 200 COLLECTOR-EMITTER VOLTAGE 10 3 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 4 3 2 10 1 TC (°C) Tj=25°C Tj=125°C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10000 Irr (A), Qrr (µc) 8000 6000 4000 2000 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 1 7 5 4 3 2 Irr Qrr trr 5 7 10 2 10 0 7 5 VCC=600V 4 IB1=2A 3 –IB2=20A 2 Tj=25°C Tj=125°C 10 –1 2 3 4 5 7 10 3 2 3 4 5 trr (µs) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (DIODE) 10 0 2 3 5 7 10 1 0.10 Zth (j–c) (°C/ W) 0.08 0.06 0.04 0.02 0 10 –3 2 3 5 7 10 –2 2 3 5 710 –1 2 3 5 7 10 0 TIME (s) Feb.1999