MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB • • • • • IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 81 BwP EwP 2–φ5.5 W BuN EuN BvN EvN BwN EwN 30 V 18 21 U φ1.65 Fig. 2 8 6.35 3.8 2.8 3.4 N 1 7.5 14 7.5 14 7.5 16 93 Tab#110, t=0.5(Fig. 2) BvP BuP Tab#250, t=0.8(Fig. 1) EvP 17.5 7.5 U LABEL φ1.2 P EuP 28.2 45 P Fig. 1 7.1 EvP 1 BvP 17.5 5.5 BuP EuP 21.5 7.95 21.5 20 BuN EuN N V BvN EvN BwP EwP W BwN EwN Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A –IC Collector reverse current DC (forward diode current) 30 A PC Collector dissipation TC=25°C 250 W IB Base current DC 1.8 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 300 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Symbol Conditions Charged part to case, AC for 1 minute — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N·m 15~20 kg·cm 230 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 60 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.0 V –VCEO Collector-emitter reverse voltage –IC=30A (diode forward voltage) — — 1.8 V hFE DC current gain IC=30A, VCE=2.5V 750 — — — — — 2.0 µs Switching time VCC=300V, IC=30A, IB1=60mA, IB2=–0.6A — — 8.0 µs — — 3.0 µs Transistor part (per 1/6 module) — — 0.5 °C/ W Diode part (per 1/6 module) — — 2.0 °C/ W Conductive grease applied (per 1/6 module) — — 0.35 °C/ W IC=30A, IB=40mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN hFE Tj=25°C 60 I A IB=100m IB=20mA 40 20 0 IB=0.5A A B=200m IB=10mA 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 VCE=2.5V Tj=25°C 10 –1 7 5 4 3 2 10 –2 2.2 2.6 3.0 3.4 3.8 BASE-EMITTER VOLTAGE 4.2 10 3 7 5 3 2 VCE=2.5V 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 VCE(sat) 7 5 4 3 IB=40mA 2 Tj=25°C Tj=125°C 10–1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 VBE(sat) VBE (V) COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) Tj=25°C Tj=125°C 4 3 IC=30A 2 IC=20A IC=10A 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 BASE CURRENT IB (A) ton, ts, tf (µs) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VCE=5.0V 10 2 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 1 Tj=25°C Tj=125°C VCE (sat), VBE (sat) (V) 80 10 4 7 5 3 2 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 100 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 ts tf VCC=300V IB1=60mA IB2=–0.6A ton 10–1 10 0 Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 80 Tj=125°C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts tf 10 0 7 5 4 3 2 VCC=300V IB1=60mA IC=30A Tj=25°C Tj=125°C 10–1 10–1 2 3 4 5 7 10 0 70 50 40 BASE REVERSE CURRENT –IB2 (A) 20 10 VCE (V) DERATING FACTOR OF F. B. S. O. A. 10 SECOND BREAKDOWN AREA 90 0µ S 7 5 3 2 10 0 7 5 3 2 TC=25°C NON–REPETITIVE 10 –1 0 10 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 10 2 0.5 TIME (s) DERATING FACTOR (%) S S 1m 10 1 0µ 50 C D COLLECTOR CURRENT IC (A) 100 200 300 400 500 600 700 800 100 COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=–3.0A 30 0 2 3 4 5 7 10 1 IB2=–0.6A 60 10 2 7 5 4 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 0.4 Tj=25°C Tj=125°C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 VCC=300V IB1=60mA IB2=–0.6A Irr 10 1 trr (µs) 500 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 Qrr 10 0 7 5 3 trr Tj=25°C 2 Tj=125°C 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 2.0 Zth (j–c) (°C/ W) 1.6 1.2 0.8 0.4 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999