MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15HA-H • • • • • IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm C C 4.75 6.35 E 4.2 0.8 0.8 0.5 16.6 24.0 3.7 7.0 0.4 φ4.2 B B E 19.5 30.2 39.0 φ1.7 7.0 7.0 φ2.4 φ1.3 6.35 4.75 Fig. A Fig. B φ2.0 φ1.7 B 24.0 A φ2.4 3.2 LABEL Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Parameter Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 15 A –IC Collector reverse current DC (forward diode current) 15 A PC Collector dissipation TC=25°C 100 W IB Base current DC 0.9 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 150 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Symbol Conditions Charged part to case, AC for 1 minute — Mounting torque Mounting screw M4 — Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N·m 10~15 kg·cm 25 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 80 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=15A (diode forward voltage) — — 1.5 V hFE DC current gain IC=15A, VCE=2V/5V 50/100 — — — — — 1.5 µs Switching time VCC=300V, IC=15A, IB1=–IB2=0.3A — — 8.0 µs — — 2.0 µs Transistor part — — 1.2 °C/ W Diode part — — 2.5 °C/ W Conductive grease applied — — 0.4 °C/ W IC=15A, IB=0.3A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 25 DC CURRENT GAIN hFE IB=0.2A 20 Tj=25°C IB=0.1A 15 IB=0.06A 10 IB=0.02A 5 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 1.6 2.0 2.4 2.8 BASE-EMITTER VOLTAGE VCE=2.0V 10 2 7 5 4 3 2 3.2 10 1 7 5 4 3 2 2 3 4 5 7 10 2 Tj=25°C Tj=125°C IB=0.3A VBE(sat) 10 0 7 5 4 VCE(sat) 3 2 10 –1 10 0 VBE (V) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 Tj=25°C Tj=125°C 4 3 IC=5A 2 IC=15A IC=10A 1 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 BASE CURRENT IB (A) ton, ts, tf (µs) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 3 4 5 7 10 1 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 0 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.0V Tj=25°C 10 –1 1.2 Tj=25°C Tj=125°C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 3 7 5 4 3 2 10 1 10 0 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) IB=0.4A 10 1 7 5 4 3 2 ts tf 10 0 ton 7 5 4 3 2 10 0 2 3 4 5 7 10 1 VCC=300V IB1=–IB2=0.3A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 40 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 3 2 ts 10 1 7 5 4 3 2 10 0 7 5 4 3 tf VCC=300V IB1=0.3A IC=15A Tj=25°C Tj=125°C 3 4 5 7 10 –1 2 3 4 5 7 10 0 30 BASE REVERSE CURRENT –IB2 (A) Tj=125°C 10 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) 400 DERATING FACTOR OF F. B. S. O. A. TC=25°C NON-REPETITIVE 10 0 7 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SECOND BREAKDOWN AREA 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.6 TIME (s) DERATING FACTOR (%) s 0µ s 0µ 50 tw 1m =1 s 0m s COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 200 90 10 10 1 7 5 3 2 0 100 DC COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 –1A 20 0 2 3 IB2=–0.5A 10 2 7 5 4 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25°C Tj=125°C 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 Tj=25°C 5 Tj=125°C 3 VCC=300V 2 IB1=–IB2=0.3A 10 1 Irr 7 5 3 2 10 2 10 1 trr (µs) 200 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 7 Qrr 5 3 2 trr 10 –1 10 –1 10 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 3.2 2.8 Zth (j–c) (°C/ W) 2.4 2.0 1.6 1.2 0.8 0.4 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999