MITSUBISHI QM800HA-2HB

MITSUBISHI TRANSISTOR MODULES
QM800HA-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM800HA-2HB
•
•
•
•
•
IC
Collector current ........................ 800A
VCEX Collector-emitter voltage ......... 1000V
hFE
DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
145
19
28
9
37
28
8–φ6.5
27
42
39
25
BX
E
E
47
74
BX
C
B
74
51
73
163
E
B
C
44.5
47MAX.
3–M4
16 3 16 3 34 3 34
LABEL
E
65
2–M8
45
65
8
27
50MAX.
9
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM800HA-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
(Tj=25°C, unless otherwise noted)
Ratings
Unit
VCEX (SUS)
Collector-emitter voltage
IC=1A, VEB=2V
1000
V
VCEX
Collector-emitter voltage
VEB=2V
1000
V
VCBO
Collector-base voltage
Emitter open
1000
V
VEBO
Emitter-base voltage
Collector open
IC
Collector current
DC
–IC
Collector reverse current
DC (forward diode current)
800
A
PC
Collector dissipation
TC=25°C
5300
W
IB
Base current
DC
40
A
–ICSM
Surge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave)
8000
A
Tj
Junction temperature
–40~+150
°C
Tstg
Storage temperature
–40~+125
°C
Viso
Isolation voltage
Parameter
Conditions
Charged part to case, AC for 1 minute
Main terminal screw M8
Mounting screw M6
—
Mounting torque
B(E) terminal screw M4
BX terminal screw M4
—
Typical value
Weight
ELECTRICAL CHARACTERISTICS
7
V
800
A
2500
V
8.83~10.8
N·m
90~110
kg·cm
1.96~2.94
N·m
20~30
kg·cm
0.98~1.47
N·m
12~18
kg·cm
0.98~1.47
N·m
12~18
kg·cm
2100
g
(Tj=25°C, unless otherwise noted)
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEX
Collector cutoff current
VCE=1000V, VEB=2V
—
—
8.0
mA
ICBO
Collector cutoff current
VCB=1000V, Emitter open
—
—
8.0
mA
IEBO
Emitter cutoff current
VEB=7V, Collector open
—
—
600
mA
VCE (sat)
Collector-emitter saturation voltage
—
—
4.0
V
VBE (sat)
Base-emitter saturation voltage
—
—
4.2
V
–VCEO
Collector-emitter reverse voltage
IC=–800A (diode forward voltage)
—
—
1.8
V
hFE
DC current gain
IC=800A, VCE=4.0V
750
—
—
—
—
—
2.5
µs
Switching time
VCC=600V, IC=800A, IB1=1.6A, –IB2=16.0A
—
—
20
µs
—
—
5.0
µs
Transistor part
—
—
0.023
°C/ W
Diode part
—
—
0.12
°C/ W
Conductive grease applied
—
—
0.01
°C/ W
IC=800A, IB=1.06A
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM800HA-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
IB=1.06A
800
DC CURRENT GAIN hFE
Tj=25°C
IB=4A
IB=0.5A
600
IB=250mA
400
200
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
Tj=25°C
VCE=4V
3.0
3.4
3.8
BASE-EMITTER VOLTAGE
10 3
7
5
4
3
2
4.2
4.6
10 1
7
5
4
3
2
3
2
VBE(sat)
VCE(sat)
IB=1.06A
10 –1
10 1
IC=800A
1
Tj=25°C
Tj=125°C
0
10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 2 3 5 7 10 1
BASE CURRENT IB (A)
2 3 45 7
10 2
2 3 4 5 7 10 3
COLLECTOR CURRENT IC (A)
COLLECTOR REVERSE CURRENT –IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
IC=1000A
IC=600A
Tj=25°C
Tj=125°C
10 0
7
5
4
3
2
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
4
2 3 4 5 7 10 3
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
VBE (V)
5
2 3 4 5 7 10 2
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
BASE CURRENT IB (A)
10 1
7
5
4
3
2
10 –1
2.6
Tj=25°C
Tj=125°C
VCE=4.0V
VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 0
7
5
4
3
2
10 4
7
5
4
3
2
10 2
10 1
5
SATURATION VOLTAGE
COLLECTOR CURRENT IC (A)
1000
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
10 3
7
5
4
3
2
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
10 2
7
5
4
3
2
10 1
Tj=25°C
Tj=125°C
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM800HA-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR CURRENT IC (A)
1600
Tj=125°C
–IB2=16A
1200
800
400
0
0
400
800
1200
COLLECTOR-EMITTER VOLTAGE
1600
VCE (V)
Feb.1999