MITSUBISHI TM130EZ-M

MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
TM130RZ/EZ/GZ-M,-H
• IT (AV)
• IF (AV)
• VRRM
•
•
•
•
(RZ Type)
Average on-state current .......... 130A
Average forward current .......... 130A
Repetitive peak reverse voltage
........ 400/800V
VDRM Repetitive peak off-state voltage
........ 400/800V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
(RZ)
3–φ6.5
3–M8
A1
K1
K2
A2
CR
K1
A2
40
20
A1
K2
SR
K 1 K2
SR
K1
G1
16
30
18
32
68.5
16
30
(EZ)
68.5
CR
150
A1
A2
Tab#110,
t=0.5
23 9
32
39
18
LABEL
CR
A1
K 1 K2
A2
SR
(RZ Type)
K1
G1
(GZ)
7
6
K1
G1
K1
G1
(Bold line is connective bar.)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Voltage class
Parameter
Symbol
M
H
Unit
VRRM
Repetitive peak reverse voltage
400
800
V
VRSM
Non-repetitive peak reverse voltage
480
960
V
VR (DC)
DC reverse voltage
320
640
V
VDRM
Repetitive peak off-state voltage
400
800
V
VDSM
Non-repetitive peak off-state voltage
480
960
V
VD (DC)
DC off-state voltage
320
640
V
Ratings
Unit
205
A
Single-phase, half-wave 180° conduction, TC=85°C
130
A
Surge (non-repetitive) current
One half cycle at 60Hz, peak value
2600
A
I2t
I2t for fusing
Value for one cycle of surge current
2.8 × 104
A2s
di/dt
Critical rate of rise of on-state current
VD=1/2VDRM, IG=1.0A, Tj=125°C
100
A/µs
PGM
Peak gate power dissipation
10
W
PG (AV)
Average gate power dissipation
3.0
W
VFGM
Peak gate forward voltage
10
V
VRGM
Peak gate reverse voltage
5.0
V
IFGM
Peak gate forward current
4.0
A
Tj
Junction temperature
–40~125
°C
Tstg
Storage temperature
–40~125
°C
Viso
Isolation voltage
Parameter
Symbol
IT (RMS), IF (RMS)
RMS current
IT (AV), IF (AV)
Average current
ITSM, IFSM
Conditions
Charged part to case
Main terminal screw M8
—
Mounting torque
Mounting screw M6
—
Typical value
Weight
2500
V
8.83~10.8
N·m
90~110
kg·cm
1.96~3.92
N·m
20~40
kg·cm
300
g
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
—
—
30
mA
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
—
—
30
mA
VTM, VFM
Forward voltage
Tj=125°C, ITM=IFM=390A, instantaneous meas.
—
—
1.3
V
dv/dt
Critical rate of rise of off-state voltage
Tj=125°C, VD=2/3VDRM
500
—
—
V/µs
VGT
Gate trigger voltage
Tj=25°C, VD=6V, RL=2Ω
—
—
3.0
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.25
—
—
V
IGT
Gate trigger current
Tj=25°C, VD=6V, RL=2Ω
15
—
100
mA
Rth (j-c)
Thermal resistance
Junction to case (per 1/2 module)
—
—
0.22
°C/ W
Rth (c-f)
Contact thermal resistance
Case to fin, conductive grease applied (per 1/2 module)
—
—
0.1
°C/ W
Insulation resistance
Measured with a 500V megohmmeter between main terminal
and case
10
—
—
MΩ
—
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
VRRM
VRSM
VR (DC)
IT (RMS)
IT (AV)
ITSM
IF (RMS)
IF (AV)
IFSM
VDRM
VDSM
VD (DC)
—
—
—
Tj
Tstg
dv/dt
VGT
VGD
IGT
—
—
—
—
I2t
di/dt
Thyristor
Diode
Item
PGM
PG (AV)
VFGM
IFGM
—
—
—
—
—
Thyristor
Diode
ELECTRICAL CHARACTERISTICS
Item
IRRM
VTM
IDRM
VFM
Rth (j-c)
Rth (c-f)
Thyristor
—
Diode
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
3200
2800
Tj=125°C
SURGE (NON-REPETITIVE)
CURRENT (A)
CURRENT (A)
10 4
7
5
3
2
2400
10 2
7
5
3
2
10 2
7
5
3
2
10 1
0.4
RATED SURGE (NON-REPETITIVE)
CURRENT
2000
1600
1200
800
400
0.8
1.2
1.6
2.0
0
2.4
FORWARD VOLTAGE (V)
GATE VOLTAGE (V)
7
5
3
2
PGM=10W
VGT=3.0V
Tj=25°C
10 0
7
5 IGT=
100mA
3
2
PG(AV)=
3.0W
10 –1
VGD=0.25V
IFGM=4.0A
7
5
410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4
GATE CURRENT (mA)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
VFGM=10V
10 1
2 3
5 7 10
20 30
50 70100
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS
4
3
2
1
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 7 10 1
0.25
0.20
0.15
0.10
0.05
0
10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0
TIME (s)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
160
θ=30°
80
60
θ
360°
40
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
20
0
20
200
40
60
90
θ=30° 60° 90°
80
180°
120°
70
0
20
40
60
80 100 120 140 160
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
160
120°
90°
140
60°
120
θ=30°
80
θ
360°
60
40
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
20
0
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
100
50
130
270°
DC
180°
100
θ
360°
110
60
80 100 120 140 160
180
0
CASE TEMPERATURE (°C)
60°
100
80
40
120
160
120
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
120
90°
120
0
AVERAGE POWER DISSIPATION (W)
130
180°
120°
140
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
θ
360°
110
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
100
90
80
θ=30° 60° 90° 180° 270° DC
120°
70
60
50
200
0
40
80
120
160
200
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
400
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
350
120
θ=180°
120°
300
θ
250
200
150
90°
θ
60°
360°
30°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
MODULE
100
50
0
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
θ=30°
110
60°
90°
100
90
θ
80
θ
70
360°
60
0
40
80 120 160 200 240 280 320
RMS CURRENT (A)
120°
180°
50
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
0
40
80 120 160 200 240 280 320
RMS CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
θ θ
360°
320
180°
120°
RESISTIVE,
INDUCTIVE
LOAD
240
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
POWER DISSIPATION (W)
(PER SINGLE MODULE)
400
90°
60°
θ=30°
160
80
110
100
90
θ=30° 60° 90°
80
70
θ θ
360°
60
0
0
40
50
80 120 160 200 240 280 320
RESISTIVE,
INDUCTIVE
LOAD
0
40
80 120 160 200 240 280 320
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
400
130
320
θ
360°
240
RESISTIVE,
INDUCTIVE
LOAD
120
120°
90°
60°
θ=30°
160
80
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
POWER DISSIPATION (W)
(PER SINGLE MODULE)
180°
120°
θ
360°
110
RESISTIVE,
INDUCTIVE
LOAD
100
θ=30°
90
60° 90° 120°
80
70
60
0
0
80
160
240
320
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
400
50
0
80
160
240
320
400
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999