MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-M,-H • IT (AV) • IF (AV) • VRRM • • • • (RZ Type) Average on-state current .......... 130A Average forward current .......... 130A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (RZ) 3–φ6.5 3–M8 A1 K1 K2 A2 CR K1 A2 40 20 A1 K2 SR K 1 K2 SR K1 G1 16 30 18 32 68.5 16 30 (EZ) 68.5 CR 150 A1 A2 Tab#110, t=0.5 23 9 32 39 18 LABEL CR A1 K 1 K2 A2 SR (RZ Type) K1 G1 (GZ) 7 6 K1 G1 K1 G1 (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol M H Unit VRRM Repetitive peak reverse voltage 400 800 V VRSM Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V Ratings Unit 205 A Single-phase, half-wave 180° conduction, TC=85°C 130 A Surge (non-repetitive) current One half cycle at 60Hz, peak value 2600 A I2t I2t for fusing Value for one cycle of surge current 2.8 × 104 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 10 W PG (AV) Average gate power dissipation 3.0 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 4.0 A Tj Junction temperature –40~125 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Parameter Symbol IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current ITSM, IFSM Conditions Charged part to case Main terminal screw M8 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 8.83~10.8 N·m 90~110 kg·cm 1.96~3.92 N·m 20~40 kg·cm 300 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 30 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 30 mA VTM, VFM Forward voltage Tj=125°C, ITM=IFM=390A, instantaneous meas. — — 1.3 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.22 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.1 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) — — — Tj Tstg dv/dt VGT VGD IGT — — — — I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM — — — — — Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM VTM IDRM VFM Rth (j-c) Rth (c-f) Thyristor — Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 3200 2800 Tj=125°C SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 4 7 5 3 2 2400 10 2 7 5 3 2 10 2 7 5 3 2 10 1 0.4 RATED SURGE (NON-REPETITIVE) CURRENT 2000 1600 1200 800 400 0.8 1.2 1.6 2.0 0 2.4 FORWARD VOLTAGE (V) GATE VOLTAGE (V) 7 5 3 2 PGM=10W VGT=3.0V Tj=25°C 10 0 7 5 IGT= 100mA 3 2 PG(AV)= 3.0W 10 –1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) TRANSIENT THERMAL IMPEDANCE (°C/W) VFGM=10V 10 1 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE 160 θ=30° 80 60 θ 360° 40 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 20 0 20 200 40 60 90 θ=30° 60° 90° 80 180° 120° 70 0 20 40 60 80 100 120 140 160 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 160 120° 90° 140 60° 120 θ=30° 80 θ 360° 60 40 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 20 0 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 50 130 270° DC 180° 100 θ 360° 110 60 80 100 120 140 160 180 0 CASE TEMPERATURE (°C) 60° 100 80 40 120 160 120 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) 120 90° 120 0 AVERAGE POWER DISSIPATION (W) 130 180° 120° 140 LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) θ 360° 110 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 θ=30° 60° 90° 180° 270° DC 120° 70 60 50 200 0 40 80 120 160 200 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 400 LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 350 120 θ=180° 120° 300 θ 250 200 150 90° θ 60° 360° 30° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 100 50 0 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) θ=30° 110 60° 90° 100 90 θ 80 θ 70 360° 60 0 40 80 120 160 200 240 280 320 RMS CURRENT (A) 120° 180° 50 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 0 40 80 120 160 200 240 280 320 RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 120 θ θ 360° 320 180° 120° RESISTIVE, INDUCTIVE LOAD 240 CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 400 90° 60° θ=30° 160 80 110 100 90 θ=30° 60° 90° 80 70 θ θ 360° 60 0 0 40 50 80 120 160 200 240 280 320 RESISTIVE, INDUCTIVE LOAD 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER TWO MODULES) DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 400 130 320 θ 360° 240 RESISTIVE, INDUCTIVE LOAD 120 120° 90° 60° θ=30° 160 80 CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 180° 120° θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 θ=30° 90 60° 90° 120° 80 70 60 0 0 80 160 240 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) 400 50 0 80 160 240 320 400 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999