MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM20RA-M,-H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current ............ 20A Average forward current ............ 20A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 60 2–φ5.5 47.6 A1 13 K1 18 32 A2 A1 SR CR K2 G1 G1 A2 K1 K2 8.5 15 36 4–M4 30 24.5 2.0 LABEL 16.5 11 Tab#110, t=0.5 Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol M H Unit VRRM Repetitive peak reverse voltage 400 800 V VRSM Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V Ratings Unit 30 A Single-phase, half-wave 180° conduction, TC=87°C 20 A Surge (non-repetitive) current One half cycle at 60Hz, peak value 400 A I2t I2t for fusing Value for one cycle of surge current 6.7 × 102 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=0.5A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~125 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Parameter Symbol IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current ITSM, IFSM Conditions Charged part to case Main terminal screw M4 — Mounting torque Mounting screw M5 — Typical value Weight 2500 V 0.98~1.47 N·m 10~15 kg·cm 1.47~2.45 N·m 15~25 kg·cm 80 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 4.0 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 4.0 mA VTM, VFM Foward voltage Tj=125°C, ITM=IFM=60A, instantaneous meas. — — 1.8 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 10 — 50 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 1.0 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.25 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) — — — Tj Tstg dv/dt VGT VGD IGT — — — — I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM — — — — — Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM VTM IDRM VFM Rth (j-c) Rth (c-f) Thyristor — Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 500 Tj=125°C SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 RATED SURGE (NON-REPETITIVE) CURRENT 1.5 2.5 3.5 400 300 200 100 0 4.5 FORWARD VOLTAGE (V) PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 0 10 50mA 7 5 Tj= 25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 TRANSIENT THERMAL IMPEDANCE (°C/W) VFGM=10V IFGM=2.0A GATE VOLTAGE (V) 5 7 10 20 30 50 70100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 10 1 GATE CURRENT (mA) 2 3 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 0.8 0.6 0.4 0.2 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 90° 30 25 θ=30° 20 15 θ 360° 10 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 5 0 5 80 70 θ=30° 60° 90° 120° 180° 0 5 10 15 20 AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 270° 180° 120° 90° 60° 35 30 25 130 DC 120 θ=30° 20 θ 360° 15 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 10 5 0 90 50 20 15 100 AVERAGE CURRENT (A) 40 AVERAGE POWER DISSIPATION (W) 10 θ 360° 110 60 CASE TEMPERATURE (°C) 0 AVERAGE POWER DISSIPATION (W) 60° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 120 CASE TEMPERATURE (°C) 35 130 180° 120° θ 360° 110 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 θ=30° 60° 70 90° 180° 120° 270° DC 60 0 5 10 15 20 25 35 30 50 40 0 5 10 15 20 25 35 30 40 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 80 LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 θ=180° θ 70 θ 60 90° 60° 30° 360° 50 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 40 30 20 10 0 125 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) 40 LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 120 115 θ=30° 110 60°,90° 105 180° θ 100 θ 95 360° 90 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 85 0 10 20 30 RMS CURRENT (A) 40 50 80 0 10 20 30 40 50 RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 80 POWER DISSIPATION (W) (PER SINGLE MODULE) 60 90° 60° 50 θ=30° 40 30 θ θ 360° 20 RESISTIVE, INDUCTIVE LOAD 10 0 0 5 10 15 20 25 30 35 120 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 180° 120° 70 110 100 90 80 θ θ 360° 70 RESISTIVE, INDUCTIVE LOAD 60 50 40 0 5 DC OUTPUT CURRENT (A) (PER TWO MODULES) 60° 50 θ=30° 40 30 θ 360° 20 RESISTIVE, INDUCTIVE LOAD 10 0 0 10 20 30 40 50 60 DC OUTPUT CURRENT (A) (PER THREE MODULES) 20 15 25 120 120° CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 60 10 30 35 40 LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 80 90° 60° 90° 120° 180° DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 70 θ=30° 70 θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 θ=30° 60° 90° 120° 70 60 80 50 0 10 20 30 40 50 60 70 80 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999