MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200DZ/CZ/PZ-M,-H,-24,-2H • IT (AV) • VRRM • • • • Average on-state current .......... 200A Repetitive peak reverse voltage ........ 400/800/1200/1600V VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 (DZ Type) APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (DZ) 3–φ6.5 4–M8 A1 K1 K2 A2 CR1 K2 A1 K2 20 40 G2 K2 G2 K1 A2 CR2 K1 G1 K1 16 32 68.5 16 (CZ) 30 K2 G2 CR1 68.5 A1 A2 K1 K2 150 CR2 K1 G1 Tab#110, t=0.5 (PZ) K2 G2 CR1 39 32 9 LABEL 23 30 18 A1 K1 K2 A2 CR2 K1 G1 7 6 G1 18 (DZ Type) (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Parameter Symbol Voltage class M H 24 2H Unit VRRM Repetitive peak reverse voltage 400 800 1200 1600 V VRSM Non-repetitive peak reverse voltage 480 960 1350 1700 V VR (DC) DC reverse voltage 320 640 960 1280 V VDRM Repetitive peak off-state voltage 400 800 1200 1600 V VDSM Non-repetitive peak off-state voltage 480 960 1350 1700 V VD (DC) DC off-state voltage 320 640 960 1280 V Ratings Unit 310 A Single-phase, half-wave 180° conduction, TC=64°C 200 A Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 4000 A I2t I2t for fusing Value for one cycle of surge current 6.7 × 104 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 10 W PG (AV) Average gate power dissipation 3.0 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 4.0 A Tj Junction temperature –40~+125 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Symbol IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM Conditions Charged part to case Main terminal screw M8 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 8.83~10.8 N·m 90~110 kg·cm 1.96~3.92 N·m 20~40 kg·cm 300 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 30 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 30 mA VTM On-state voltage Tj=125°C, ITM=600A, instantaneous meas. — — 1.35 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.2 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.1 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Feb.1999 MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES 10 2 7 5 3 2 4000 Tj=125°C 3500 3000 10 1 7 5 3 2 10 0 7 5 3 2 10 –1 0.5 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 2500 2000 1500 1000 500 1.0 1.5 2.0 0 2.5 1 2 3 ON-STATE VOLTAGE (V) GATE VOLTAGE (V) VFGM=10V 10 1 7 5 3 2 PGM=10W VGT=3.0V PG(AV)= 3.0W Tj=25°C 10 0 7 5 IGT= 100mA 3 2 10 –1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE CHARACTERISTICS 4 3 2 50 70100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 2 3 0.25 0.20 0.15 0.10 0.05 GATE CURRENT (mA) TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 130 280 θ 360° 240 180° 120° RESISTIVE, INDUCTIVE LOAD 200 160 90° 60° θ=30° 120 80 PER SINGLE ELEMENT CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 20 30 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –12 3 5 7 10 0 320 PER SINGLE ELEMENT 120 110 0 40 80 120 160 AVERAGE ON-STATE CURRENT (A) 200 θ 360° RESISTIVE, INDUCTIVE LOAD 100 90 80 70 θ=30° 60 40 0 5 7 10 CONDUCTION TIME (CYCLES AT 60Hz) 50 0 40 80 60° 90° 120° 180° 120 160 200 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 350 θ 360° 180° RESISTIVE, 120° INDUCTIVE LOAD 90° 60° θ=30° 300 250 200 DC 270° 150 100 PER SINGLE ELEMENT 50 0 0 40 80 120 160 200 240 280 320 AVERAGE ON-STATE CURRENT (A) 130 PER SINGLE ELEMENT 120 CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 400 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) θ 360° 110 100 RESISTIVE, INDUCTIVE LOAD 90 80 70 60 50 120° θ=30° 60° 90° 180° 40 30 0 40 270° DC 80 120 160 200 240 280 320 AVERAGE ON-STATE CURRENT (A) Feb.1999