MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM55DZ/CZ-M,-H • IT (AV) • VRRM • • • • Average on-state current ............ 55A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, E lectric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 (DZ) K2 G 2 26 12.5 K2 G2 A1K2 CR1 K1 K1 G1 20 K1 G 1 3–M5 (CZ) Tab#110, t=0.5 K2 G2 A1 LABEL 9 21 30 20 6.5 17.5 A2 CR2 CR1 K1K2 A2 CR2 K1 G1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol M H Unit VRRM Repetitive peak reverse voltage 400 800 V VRSM Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V Parameter Symbol Conditions Ratings Unit 86 A 55 A IT (RMS) RMS on-state current IT (AV) Average on-state current Single-phase, half-wave 180° conduction, TC=86°C ITSM Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 1100 A I2t I2t for fusing Value for one cycle of surge current 5.0 × 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~+125 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 10 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 10 mA VTM On-state voltage Tj=125°C, ITM=165A, instantaneous meas. — — 1.35 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.5 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.2 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 1200 SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 1000 10 2 7 5 3 2 Tj=125°C 10 1 7 5 3 2 10 0 0.4 0.8 1.2 1.6 2.0 800 600 400 200 2.4 2 3 1 ON-STATE VOLTAGE (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) PER SINGLE ELEMENT 60° 50 130 180° 120 120° 90° θ=30° 40 30 θ 360° 20 RESISTIVE, INDUCTIVE LOAD 10 0 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.8 GATE CURRENT (mA) 60 0 50 70100 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –12 3 5 7 10 0 CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 70 TRANSIENT THERMAL IMPEDANCE (°C/W) IFGM=2.0A GATE VOLTAGE (V) VFGM=10V 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 80 20 30 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 5 7 10 10 20 30 40 50 60 70 AVERAGE ON-STATE CURRENT (A) θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 θ=30° 60° 90° 120° 180° 70 PER SINGLE ELEMENT 60 80 50 0 10 20 30 40 50 60 70 80 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 270° CASE TEMPERATURE (°C) 180° 120° 90° 60° θ=30° 60 40 θ 360° 20 RESISTIVE, INDUCTIVE LOAD 0 160 20 40 60 70 θ=30° 60° 90° 180° 270° DC 120° 50 0 θ 120° 90° 60° 30° RESISTIVE, INDUCTIVE LOAD 40 PER SINGLE MODULE 20 20 40 130 θ=180° 60 60 80 100 120 140 160 80 PER SINGLE MODULE 115 110 105 120° 180° 120 90° 100 θ=30° 60° 80 θ θ 360° 60 RESISTIVE, INDUCTIVE LOAD 40 20 θ 95 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) 60° 90° 360° 90 120° 180° 80 100 120 140 160 125 θ θ 360° 120 115 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 θ=30° 60° 90° 120° 85 20 θ=30° θ 100 LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 160 140 100 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (°C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 60 120 RESISTIVE, 85 INDUCTIVE LOAD 80 0 20 40 60 MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 0 40 125 RMS ON-STATE CURRENT (A) 0 20 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) 360° 0 80 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) 120 0 90 AVERAGE ON-STATE CURRENT (A) 140 80 RESISTIVE, INDUCTIVE LOAD 100 60 100 θ 360° 110 AVERAGE ON-STATE CURRENT (A) θ 100 80 PER SINGLE ELEMENT 120 PER SINGLE ELEMENT 80 0 AVERAGE ON-STATE POWER DISSIPATION (W) 130 DC CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 100 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 80 0 20 40 60 180° 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE 160 LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 140 120 90° 120 60° 100 120° θ=30° 80 60 θ 360° 40 RESISTIVE, INDUCTIVE LOAD 20 0 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) CASE TEMPERATURE (°C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 θ=30° 80 60° 90° 120° 70 60 50 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999