MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE TM90RZ/EZ-M,-H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current ............ 90A Average forward current ............ 90A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 (RZ) 26 12.5 2–φ6.5 A1K2 CR K1 K1 G1 20 (EZ) Tab#110, t=0.5 A1 30 9 LABEL K1 G1 3–M5 6.5 20 21 17.5 A2 SR CR K1K2 A2 SR K1 G1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol M H Unit VRRM Repetitive peak reverse voltage 400 800 V VRSM Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V Parameter Symbol Conditions Ratings Unit 140 A 90 A IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current Single-phase, half-wave 180° conduction, TC=86°C ITSM, IFSM Surge (non-repetitive) current One half cycle at 60Hz, peak value 1800 A I2t I2t for fusing Value for one cycle of surge current 1.4 × 104 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~125 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 15 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 15 mA VTM, VFM Forward voltage Tj=125°C, ITM=IFM=270A, instantaneous meas. — — 1.3 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.3 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.2 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) — — — Tj Tstg dv/dt VGT VGD IGT — — — — I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM — — — — — Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM IDRM VTM VFM Rth (j-c) Rth (c-f) Thyristor — Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 2000 SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 3 7 Tj=125°C 5 3 2 1600 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 RATED SURGE (NON-REPETITIVE) CURRENT 1200 0.8 1.2 1.6 2.0 800 400 0 2.4 FORWARD VOLTAGE (V) PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 0 10 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) TRANSIENT THERMAL IMPEDANCE (°C/W) VFGM=10V IFGM=2.0A GATE VOLTAGE (V) 10 1 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE 160 130 120 θ 360° 120 180° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 120° 60° 80 90° θ=30° 60 40 CASE TEMPERATURE (°C) 140 0 20 160 40 80 60 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 70 θ=30° 50 100 120 100 130 120 120° 90° 100 60° 80 θ=30° θ 360° 40 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 20 20 40 60 θ 360° 110 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 70 θ=30° 60° 90° 180° 270° DC 120° 60 50 80 100 120 140 160 0 20 40 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 80 100 120 140 160 LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 CASE TEMPERATURE (°C) 18 1 0° 60 90 20° ° ° θ= θ 360° 60 AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 200 θ 120 80 LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 270° 160 60 40 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 180° 0 20 AVERAGE CURRENT (A) DC 60 0 AVERAGE CURRENT (A) AVERAGE POWER DISSIPATION (W) 60° 90° 120° 180° AVERAGE CURRENT (A) 140 0 θ 360° 110 60 20 0 AVERAGE POWER DISSIPATION (W) LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) ° 30 80 40 120 θ=30° 60° 90° 120° 180° 110 θ 100 θ 360° 90 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 0 0 40 80 120 RMS CURRENT (A) 160 200 80 0 40 80 120 160 200 RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 POWER DISSIPATION (W) (PER SINGLE MODULE) 280 θ θ 360° 240 180° RESISTIVE, INDUCTIVE LOAD 200 120° 60° 160 90° θ=30° 120 80 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 320 120 θ θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 θ=30° 40 0 40 80 120 0 40 80 120 160 200 DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 90° 120° 120 60° 160 θ=30° 120 θ 360° 80 RESISTIVE, INDUCTIVE LOAD 40 0 80 200 DC OUTPUT CURRENT (A) (PER TWO MODULES) 200 POWER DISSIPATION (W) (PER SINGLE MODULE) 160 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) CASE TEMPERATURE (°C) (PER SINGLE MODULE) 0 60° 90° 120° 180° θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 θ=30° 80 60° 90° 120° 70 60 50 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999