MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25DZ/CZ-24,-2H • IT (AV) • VRRM • • • • Average on-state current ............ 25A Repetitive peak reverse voltage ........ 1200/1600V VDRM Repetitive peak off-state voltage ......... 1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 (DZ) 80 K2 G 2 2–φ6.5 K2 G2 K1 26 13 A1K2 CR1 A2 CR2 K1 G 1 K1 G1 23 3–M5 (CZ) K2 G2 Tab # 110, t=0.5 A1 CR1 K1K2 A2 K1 G1 LABEL 30 9 CR2 21 23 6.5 16.5 Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol 24 2H Unit VRRM Repetitive peak reverse voltage 1200 1600 V VRSM Non-repetitive peak reverse voltage 1350 1700 V VR (DC) DC reverse voltage 960 1280 V VDRM Repetitive peak off-state voltage 1200 1600 V VDSM Non-repetitive peak off-state voltage 1350 1700 V VD (DC) DC off-state voltage 960 1280 V Ratings Unit 39 A Single-phase, half-wave 180° conduction, TC=87°C 25 A Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 500 A I2t I2t for fusing Value for one cycle of surge current 1.0 × 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=0.5A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~+125 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Symbol IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM Conditions Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 10 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 10 mA VTM On-state voltage Tj=125°C, ITM=75A, instantaneous meas. — — 1.8 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 10 — 50 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.8 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.2 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 500 Tj=125°C SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 1.0 1.5 2.0 400 300 200 100 0 2.5 1 2 3 ON-STATE VOLTAGE (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –12 3 5 7 10 0 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 30 RESISTIVE, INDUCTIVE LOAD 130 180° 120° 90° 60° θ=30° 20 PER SINGLE ELEMENT 10 5 10 15 20 AVERAGE ON-STATE CURRENT (A) 25 PER SINGLE ELEMENT CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 0.9 GATE CURRENT (mA) 40 0 TRANSIENT THERMAL IMPEDANCE (°C/W) IFGM=2.0A GATE VOLTAGE (V) VFGM=10V θ 360° 0 50 70100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 50mA 7 5 Tj= 25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 50 20 30 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 5 7 10 120 θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 θ=30° 0 5 10 60° 90° 120° 180° 15 20 25 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 270° DC 180° 120° 90° 40 60° 30 30° 20 θ 360° 10 PER SINGLE ELEMENT 0 0 8 16 RESISTIVE, INDUCTIVE LOAD 24 32 AVERAGE ON-STATE CURRENT (A) 130 PER SINGLE ELEMENT 120 CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 50 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 θ=30° 60° 90° 180° 270° DC 120° 70 60 40 50 0 5 10 15 20 25 30 35 40 AVERAGE ON-STATE CURRENT (A) Feb.1999