MITSUBISHI TM25EZ-24

MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
TM25RZ/EZ-24,-2H
• IT (AV)
• IF (AV)
• VRRM
•
•
•
•
Average on-state current ............ 25A
Average forward current ............ 25A
Repetitive peak reverse voltage
.... 1200/1600V
VDRM Repetitive peak off-state voltage
.... 1200/1600V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
(RZ)
A1K2
26
13
2–φ6.5
CR
K1
K1 G1
23
23
K1 G1
3–M5
(EZ)
Tab#110, t=0.5
CR
K1K2
A2
SR
K1 G1
30
LABEL
6.5
9
A1
21
16.5
A2
SR
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Voltage class
Parameter
Symbol
24
H
Unit
VRRM
Repetitive peak reverse voltage
1200
1600
V
VRSM
Non-repetitive peak reverse voltage
1350
1700
V
VR (DC)
DC reverse voltage
960
1280
V
VDRM
Repetitive peak off-state voltage
1200
1600
V
VDSM
Non-repetitive peak off-state voltage
1350
1700
V
VD (DC)
DC off-state voltage
960
1280
V
Ratings
Unit
39
A
Single-phase, half-wave 180° conduction, TC=87°C
25
A
Surge (non-repetitive) current
One half cycle at 60Hz, peak value
500
A
I2t
I2t for fusing
Value for one cycle of surge current
1.0 × 103
A2s
di/dt
Critical rate of rise of on-state current
VD=1/2VDRM, IG=1.0A, Tj=125°C
100
A/µs
PGM
Peak gate power dissipation
5.0
W
PG (AV)
Average gate power dissipation
0.5
W
VFGM
Peak gate forward voltage
10
V
VRGM
Peak gate reverse voltage
5.0
V
IFGM
Peak gate forward current
2.0
A
Tj
Junction temperature
–40~125
°C
Tstg
Storage temperature
–40~125
°C
Viso
Isolation voltage
Parameter
Symbol
IT (RMS), IF (RMS)
RMS current
IT (AV), IF (AV)
Average current
ITSM, IFSM
Conditions
Charged part to case
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Typical value
Weight
2500
V
1.47~1.96
N·m
15~20
kg·cm
1.96~2.94
N·m
20~30
kg·cm
160
g
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
—
—
10
mA
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
—
—
10
mA
VTM, VFM
Forward voltage
Tj=125°C, ITM=IFM=75A, instantaneous meas.
—
—
1.8
V
dv/dt
Critical rate of rise of off-state voltage
Tj=125°C, VD=2/3VDRM
500
—
—
V/µs
VGT
Gate trigger voltage
Tj=25°C, VD=6V, RL=2Ω
—
—
3.0
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.25
—
—
V
IGT
Gate trigger current
Tj=25°C, VD=6V, RL=2Ω
10
—
50
mA
Rth (j-c)
Thermal resistance
Junction to case (per 1/2 module)
—
—
0.8
°C/ W
Rth (c-f)
Contact thermal resistance
Case to fin, conductive grease applied (per 1/2 module)
—
—
0.20
°C/ W
Insulation resistance
Measured with a 500V megohmmeter between main terminal
and case
10
—
—
MΩ
—
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
VRRM
VRSM
VR (DC)
IT (RMS)
IT (AV)
ITSM
IF (RMS)
IF (AV)
IFSM
VDRM
VDSM
VD (DC)
—
—
—
Tj
Tstg
dv/dt
VGT
VGD
IGT
—
—
—
—
I2t
di/dt
Thyristor
Diode
Item
PGM
PG (AV)
VFGM
IFGM
—
—
—
—
—
Thyristor
Diode
ELECTRICAL CHARACTERISTICS
Item
IRRM
VTM
IDRM
VFM
Rth (j-c)
Rth (c-f)
Thyristor
—
Diode
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
500
Tj=125°C
450
SURGE (NON-REPETITIVE)
CURRENT (A)
CURRENT (A)
10 3
7
5
3
2
10 2
7
5
3
2
10 1
7
5
3
2
10 0
0.5
RATED SURGE (NON-REPETITIVE)
CURRENT
400
350
300
250
200
150
100
50
1.0
1.5
2.0
0
2.5
FORWARD VOLTAGE (V)
IFGM=2.0A
GATE VOLTAGE (V)
PGM=5.0W
7
5 VGT=3.0V
PG(AV)=
3
0.50W
2
IGT=
0
10 50mA
7
5 Tj=
25°C
3
2
VGD=0.25V
10 –1
7
5
410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4
TRANSIENT THERMAL IMPEDANCE
(°C/W)
VFGM=10V
10 1
GATE CURRENT (mA)
2 3
5 7 10
20 30
50 70100
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS
4
3
2
1
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 710 1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0
TIME (s)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
120°
90°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
30
130
180°
θ
360°
40
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
60°
θ=30°
20
10
0
5
10
15
20
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
110
100
90
80
25
θ
360°
120
θ=30°
0
5
60° 90° 120° 180°
15
10
20
25
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER
DISSIPATION (RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
270°
50
130
DC
180°
120
120°
90°
40
60°
30
30°
20
θ
360°
10
0
CASE TEMPERATURE (°C)
50
0
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
INSULATED TYPE
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
0
8
16
24
32
AVERAGE CURRENT (A)
40
θ
360°
110
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
100
90
80
θ=30° 60° 90° 180° 270° DC
120°
70
60
50
0
5
10
15
20
25
30
35
40
AVERAGE CURRENT (A)
Feb.1999