MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-24,-2H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current ............ 25A Average forward current ............ 25A Repetitive peak reverse voltage .... 1200/1600V VDRM Repetitive peak off-state voltage .... 1200/1600V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 (RZ) A1K2 26 13 2–φ6.5 CR K1 K1 G1 23 23 K1 G1 3–M5 (EZ) Tab#110, t=0.5 CR K1K2 A2 SR K1 G1 30 LABEL 6.5 9 A1 21 16.5 A2 SR Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol 24 H Unit VRRM Repetitive peak reverse voltage 1200 1600 V VRSM Non-repetitive peak reverse voltage 1350 1700 V VR (DC) DC reverse voltage 960 1280 V VDRM Repetitive peak off-state voltage 1200 1600 V VDSM Non-repetitive peak off-state voltage 1350 1700 V VD (DC) DC off-state voltage 960 1280 V Ratings Unit 39 A Single-phase, half-wave 180° conduction, TC=87°C 25 A Surge (non-repetitive) current One half cycle at 60Hz, peak value 500 A I2t I2t for fusing Value for one cycle of surge current 1.0 × 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~125 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Parameter Symbol IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current ITSM, IFSM Conditions Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 10 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 10 mA VTM, VFM Forward voltage Tj=125°C, ITM=IFM=75A, instantaneous meas. — — 1.8 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 10 — 50 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.8 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.20 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) — — — Tj Tstg dv/dt VGT VGD IGT — — — — I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM — — — — — Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM VTM IDRM VFM Rth (j-c) Rth (c-f) Thyristor — Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 500 Tj=125°C 450 SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 RATED SURGE (NON-REPETITIVE) CURRENT 400 350 300 250 200 150 100 50 1.0 1.5 2.0 0 2.5 FORWARD VOLTAGE (V) IFGM=2.0A GATE VOLTAGE (V) PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 0 10 50mA 7 5 Tj= 25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 TRANSIENT THERMAL IMPEDANCE (°C/W) VFGM=10V 10 1 GATE CURRENT (mA) 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE 120° 90° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 30 130 180° θ 360° 40 LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 60° θ=30° 20 10 0 5 10 15 20 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 110 100 90 80 25 θ 360° 120 θ=30° 0 5 60° 90° 120° 180° 15 10 20 25 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 270° 50 130 DC 180° 120 120° 90° 40 60° 30 30° 20 θ 360° 10 0 CASE TEMPERATURE (°C) 50 0 AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) INSULATED TYPE RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 0 8 16 24 32 AVERAGE CURRENT (A) 40 θ 360° 110 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 θ=30° 60° 90° 180° 270° DC 120° 70 60 50 0 5 10 15 20 25 30 35 40 AVERAGE CURRENT (A) Feb.1999