MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE TM90DZ/CZ-M,-H • IT (AV) • VRRM • • • • Average on-state current ............ 90A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 (DZ) 80 K2 G2 2–φ6.5 A1K2 CR1 K1 20 K1 G1 3–M5 (CZ) K2 G2 Tab#110, t=0.5 A1 CR1 K1K2 A2 K1 G1 LABEL 30 9 CR2 21 20 A2 CR2 G1 6.5 17.5 K1 26 G2 12.5 K2 Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol M H Unit VRRM Repetitive peak reverse voltage 400 800 V VRSM Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V Parameter Symbol Conditions Ratings Unit 140 A 90 A IT (RMS) RMS on-state current IT (AV) Average on-state current Single-phase, half-wave 180° conduction, TC=86°C ITSM Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 1800 A I2t I2t for fusing Value for one cycle of surge current 1.4 × 104 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~+125 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 15 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 15 mA VTM On-state voltage Tj=125°C, ITM=270A, instantaneous meas. — — 1.3 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.3 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.2 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 2000 Tj=125°C SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 1600 10 2 7 5 3 2 1200 10 1 7 5 3 2 10 0 0.4 0.8 1.2 1.6 2.0 800 400 0 2.4 1 2 3 ON-STATE VOLTAGE (V) 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 130 180° 120° 60° 90° θ=30° 60 PER SINGLE ELEMENT 120 40 PER SINGLE ELEMENT CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 0.25 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 80 θ 360° RESISTIVE, INDUCTIVE LOAD 110 100 90 80 70 θ=30° 60° 90° 120° 180° 60 20 0 0.30 TIME (s) RESISTIVE, INDUCTIVE LOAD 100 0.35 GATE CURRENT (mA) θ 360° 120 TRANSIENT THERMAL IMPEDANCE (°C/W) IFGM=2.0A GATE VOLTAGE (V) VFGM=10V 140 50 70100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.40 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 160 20 30 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 5 7 10 0 20 40 60 80 AVERAGE ON-STATE CURRENT (A) 100 50 0 20 40 60 80 100 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270° 180° 120 120° 90° 100 60° 80 θ=30° 60 θ 360° 40 20 200 40 60 100 θ=30° 60° 90° 180° 270° DC 120° 0 130 ° 30 40 PER SINGLE MODULE 20 60 80 100 120 140 160 40 80 120 160 110 105 θ 100 θ 95 360° 90 80 200 θ=30° 60° 90° 120° 180° 115 RESISTIVE, INDUCTIVE LOAD 85 0 40 PER SINGLE MODULE 80 120 240 180° RESISTIVE, INDUCTIVE LOAD 200 160 120° 60° 90° θ=30° 120 80 40 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 125 θ θ 360° θ θ 360° 120 115 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 θ=30° 85 0 40 80 120 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) 200 LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 320 280 160 RMS ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 40 120 RMS ON-STATE CURRENT (A) 0 20 125 60 0 70 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) 80 0 80 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) RESISTIVE, INDUCTIVE LOAD 120 90 AVERAGE ON-STATE CURRENT (A) 360° 140 RESISTIVE, INDUCTIVE LOAD 100 AVERAGE ON-STATE CURRENT (A) θ 160 θ 360° 110 50 80 100 120 140 160 θ 180 AVERAGE ON-STATE POWER DISSIPATION (W) 20 CASE TEMPERATURE (°C) 0 PER SINGLE ELEMENT 120 60 18 1 0° 60 90 20° ° ° 0 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 130 CASE TEMPERATURE (°C) 140 θ= AVERAGE ON-STATE POWER DISSIPATION (W) 160 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 200 80 0 40 60° 90° 120° 180° 80 120 160 200 DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE 200 90° 120° 180 120 60° 160 140 θ=30° 120 100 θ 360° 80 60 RESISTIVE, INDUCTIVE LOAD 40 20 0 LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) CASE TEMPERATURE (°C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 θ=30° 80 60° 90° 120° 70 60 50 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999