MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM55RZ/EZ-24,-2H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current ............ 55A Average forward current ............ 55A Repetitive peak reverse voltage .... 1200/1600V VDRM Repetitive peak off-state voltage .... 1200/1600V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 (RZ) 26 13 2–φ6.5 A1K2 CR K1 A2 K1 G1 SR 23 23 (EZ) Tab#110, t=0.5 A1 30 9 21 LABEL K1 G1 3–M5 6.5 16.5 CR K1K2 A2 SR K1 G1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol 24 2H Unit VRRM Repetitive peak reverse voltage 1200 1600 V VRSM Non-repetitive peak reverse voltage 1350 1700 V VR (DC) DC reverse voltage 960 1280 V VDRM Repetitive peak off-state voltage 1200 1600 V VDSM Non-repetitive peak off-state voltage 1350 1700 V VD (DC) DC off-state voltage 960 1280 V Parameter Symbol Conditions Ratings Unit 86 A 55 A IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current Single-phase, half-wave 180° conduction, TC=81°C ITSM, IFSM Surge (non-repetitive) current One half cycle at 60Hz, peak value 1100 A I2t I2t for fusing Value for one cycle of surge current 5.0 × 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~125 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 10 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 10 mA VTM, VFM Forward voltage Tj=125°C, ITM=IFM=165A, instantaneous meas. — — 1.5 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 2.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.5 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.2 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) — — — Tj Tstg dv/dt VGT VGD IGT — — — — I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM — — — — — Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM IDRM VTM VFM Rth (j-c) Rth (c-f) Thyristor — Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 1200 Tj=125°C SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) CURRENT 1000 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 800 600 400 200 FORWARD VOLTAGE (V) PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 0 10 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) TRANSIENT THERMAL IMPEDANCE (°C/W) VFGM=10V IFGM=2.0A GATE VOLTAGE (V) 10 1 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 60 60° 50 θ 360° θ=30° 40 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 30 20 θ 360° 110 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 θ=30° 60° 90° 120° 70 10 20 30 50 40 70 60 0 20 30 50 40 60 70 80 AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 270° DC 180° LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 60 130 120 60° θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 20 110 θ 360° 100 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 90 80 70 120° θ=30° 60° 90° 180° 270° DC 60 0 10 AVERAGE CURRENT (A) 120° 90° 40 50 80 CASE TEMPERATURE (°C) 0 80 0 180° 60 10 100 AVERAGE POWER DISSIPATION (W) 120 90° CASE TEMPERATURE (°C) 70 0 AVERAGE POWER DISSIPATION (W) 130 180° 120° 40 20 60 80 50 100 0 20 40 60 80 100 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 160 θ=180° θ 120° 140 θ 90° 120 360° 60° RESISTIVE, INDUCTIVE 100 LOAD LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 PER SINGLE MODULE 80 30° 60 40 20 0 0 20 40 60 80 100 120 140 160 RMS CURRENT (A) 120 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) 80 LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) θ=30° 60° 90° 120° 180° 110 100 90 θ 80 θ 70 360° 60 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 50 0 20 40 60 80 100 120 140 160 RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-24,-2H HIGH VOLTAGEMEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 160 180° 120° 120 90° 60° 120 100 θ=30° θ θ 360° RESISTIVE, INDUCTIVE LOAD 80 60 40 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 140 POWER DISSIPATION (W) (PER SINGLE MODULE) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 110 100 90 80 60 0 50 20 40 60 80 100 120 140 160 RESISTIVE, INDUCTIVE LOAD 70 20 0 θ θ 360° θ=30° 60° 90° 120° 180° 0 20 DC OUTPUT CURRENT (A) (PER TWO MODULES) 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 160 120° 90° 120 60° 100 θ=30° 80 60 θ 360° 40 RESISTIVE, INDUCTIVE LOAD 20 0 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) 120 CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 140 θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 θ=30° 80 60° 90° 120° 70 60 50 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999