MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC15 Series MAC15A Series Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. TRIACs 15 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes (MAC15A Series) MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = –40 to +125°C) Symbol Value VDRM Volts 200 400 600 800 MAC15-4, MAC15A4 MAC15-6, MAC15A6 MAC15-8, MAC15A8 MAC15-10, MAC15A10 Peak Gate Voltage Unit VGM 10 Volts IT(RMS) 15 Amps I2t 93 A2s Peak Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current ITSM 150 Amps Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps TJ –40 to +125 °C Tstg –40 to +150 °C Symbol Max Unit RθJC 2 °C/W On-State Current RMS Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) Circuit Fusing (t = 8.3 ms) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 1 Motorola Thyristor Device Data 3–59 ELECTRICAL CHARACTERISTICS (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) Symbol TJ = 25°C TJ = 125°C Peak On-State Voltage (ITM = 21 A Peak; Pulse Width = 1 or 2 ms, Duty Cycle VTM p 2%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Typ Max Unit — — — — 10 2 µA mA — 1.3 1.6 Volts Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT mA — — — — — — — — 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — Holding Current (Either Direction) (VD = 12 Vdc, Gate Open) (IT = 200 mA) IH — 6 40 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A) (IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C) FIGURE 1 – RMS CURRENT DERATING FIGURE 2 – ON-STATE POWER DISSIPATION 130 20 α = 30° 120 PAV , AVERAGE POWER (WATTS) TC, CASE TEMPERATURE ( °C) Min IDRM α = 60° α = 90° 110 α = 180° 100 dc α 90 α TJ ≈ 125° α = CONDUCTION ANGLE 80 0 2 4 6 16 TJ ≈ 125°C 12 α 120° dc 90° 60° α 30° 8 α = CONDUCTION ANGLE 4 0 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 3–60 α = 180° 14 16 0 2 4 6 8 10 12 14 16 IT(RMS), ON-STATE CURRENT (AMP) Motorola Thyristor Device Data FIGURE 4 – TYPICAL GATE TRIGGER CURRENT FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE 50 OFF-STATE VOLTAGE = 12 V 1.6 1.4 QUADRANT 4 1.2 1.0 0.8 0.6 0.4 –60 1 QUADRANTS 2 3 –40 –20 0 20 40 60 80 100 OFF-STATE VOLTAGE = 12 V IGT , GATE TRIGGER CURRENT (mA) Vgt, GATE TRIGGER VOLTAGE (VOLTS) 1.8 30 20 1 2 QUADRANT 3 7.0 4 5.0 –60 –40 –20 10 120 140 0 20 40 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) FIGURE 5 – ON-STATE CHARACTERISTICS FIGURE 6 – TYPICAL HOLDING CURRENT 100 20 GATE OPEN 50 IH , HOLDING CURRENT (mA) 70 TJ = 25°C 125°C 30 20 10 7 MAIN TERMINAL #1 POSITIVE 10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 –60 –40 5 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 3 FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT 2 300 TSM , PEAK SURGE CURRENT (AMP) i TM , INSTANTANEOUS FORWARD CURRENT (AMP) 60 TJ, JUNCTION TEMPERATURE (°C) 1 0.7 0.5 0.3 0.2 0.1 0.4 200 100 70 50 TC = 80°C f = 60 Hz Surge is preceded and followed by rated current 30 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Motorola Thyristor Device Data 4 4.4 1 2 3 5 NUMBER OF CYCLES 7 10 3–61 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) FIGURE 8 – THERMAL RESPONSE 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) 3–62 Motorola Thyristor Device Data