MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC210 Series MAC210A Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes (MAC210A Series) TRIACs 10 AMPERES RMS 200 thru 800 VOLTS MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) On-State Current RMS (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) Preceded and followed by Rated Current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) Operating Junction Temperature Range Storage Temperature Range Symbol Value VDRM Unit Volts 200 400 600 800 MAC210-4, MAC210A4 MAC210-6, MAC210A6 MAC210-8, MAC210A8 MAC210-10, MAC210A10 IT(RMS) 10 Amps ITSM 100 Amps I2t 40 A2s PGM 20 Watts PG(AV) 0.35 Watt IGM 2 Amps TJ –40 to +125 °C Tstg –40 to +125 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 3–75 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC 2.2 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) Symbol Min Typ Max Unit — — — — 10 2 µA mA — 1.2 1.65 Volts IDRM TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) (ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) VTM Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 k ohms, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT mA — — — — 12 12 20 35 50 50 50 75 volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA, TC = +25°C) IH — 6 50 mA Turn-On Time (Rated VDRM, ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs dv/dt(c) — 5 — V/µs dv/dt — 100 — V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) 3–76 Motorola Thyristor Device Data FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION 14.0 P (AV) , AVERAGE POWER DISSIPATION 130 TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CONDUCTION ANGLE = 360° CONDUCTION ANGLE = 360° 12.0 120 10.0 110 100 90 80 70 8.0 6.0 4.0 2.0 0 60 1.0 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 9.0 0 10.0 FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS 10.0 100 50 20 10 5.0 TJ = 25°C TJ = 125°C ITSM , PEAK SURGE CURRENT (AMP) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 9.0 FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT 100 2.0 4.0 5.0 6.0 7.0 8.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 1.0 80 60 40 20 0 1.0 CYCLE TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 1.0 2.0 0.5 3.0 5.0 7.0 10 NUMBER OF CYCLES 0.2 Motorola Thyristor Device Data VGT , GATE TRIGGER VOLTAGE (NORMALIZED) FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 –60 –40 –20 20 0 40 TC, CASE TEMPERATURE (°C) 60 80 3–77 FIGURE 7 — TYPICAL HOLDING CURRENT 2.8 IH , HOLDING CURRENT (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) FIGURE 6 — TYPICAL GATE TRIGGER CURRENT 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 2.4 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 1.6 1.2 0.8 0.4 0 –60 80 –40 –20 TC, CASE TEMPERATURE (°C) 0 20 40 60 80 TC, CASE TEMPERATURE (°C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) FIGURE 8 – THERMAL RESPONSE 1.0 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) 3–78 Motorola Thyristor Device Data