MOTOROLA T2800

MOTOROLA
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by T2800/D
SEMICONDUCTOR TECHNICAL DATA
T2800
SERIES
Triacs
Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• T2800 — Four Quadrant Gating
TRIACs
8 AMPERES RMS
200 thru 600 VOLTS
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Peak Repetitive Off-State Voltage(1)
(TJ = –40 to +100°C, Gate Open)
T2800 B
D
M
RMS On-State Current
(Conduction Angle = 360°)
Value
VDRM
(TC = +80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = +80°C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Power (Pulse Width = 1 µs)
Average Gate Power
Peak Gate Trigger Current (Pulse Width = 1 µs)
Operating Junction Temperature Range
Storage Temperature Range
Unit
Volts
200
400
600
IT(RMS)
8
Amps
ITSM
100
Amps
I2t
40
A2s
PGM
16
Watts
PG(AV)
0.35
Watt
IGTM
4
Amps
TJ
–40 to +100
°C
Tstg
–40 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
2.2
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
Symbol
TC = 25°C
TC = 100°C
Peak On-State Voltage (Either Direction)*
(IT = 30 A Peak)
VTM
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+) T2800
MT2(+), G(–) T2800
MT2(–), G(–) T2800
MT2(–), G(+) T2800
IGT
Gate Trigger Voltage (Continuous dc) (All Polarities)
(VD = 12 Vdc, RL = 100 Ohms)
(RL = 125 Ohms, VD = VDRM, TC = 100°C)
VGT
Holding Current (Either Direction)
(VD = 12 Vdc, Gate Open)
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
T2800
—
—
10
2
µA
mA
—
1.7
2
Volts
10
20
15
30
25
60
25
60
—
0.2
1.25
—
2.5
—
—
15
30
tgt
—
1.6
—
µs
dv/dt(c)
—
10
—
V/µs
Volts
mA
p 300 µs, Duty Cycle p 2%.
95
90
85
80
6
IT(RMS), RMS ON-STATE CURRENT (AMP)
—
—
—
—
—
—
FIGURE 2 – POWER DISSIPATION
FULL CYCLE
SINUSOIDAL
WAVEFORM
4
V/µs
100
—
60
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
—
—
—
—
—
—
B
D
M
100
2
Unit
dv/dt
FIGURE 1 – CURRENT DERATING
2
Max
IH
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80°C)
0
Typ
mA
T2800
Gate Controlled Turn-On Time
(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs)
*Pulse Test: Pulse Width
Min
IDRM
8
12
10
FULL CYCLE
SINUSOIDAL
WAVEFORM
8
MAXIMUM
TYPICAL
6
4
2
0
0
2
4
6
8
10
12
IT(RMS), RMS ON-STATE CURRENT (AMP)
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
B
F
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
S
4
Q
A
STYLE 4:
PIN 1.
2.
3.
4.
U
1 2 3
H
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
K
Z
R
L
V
J
G
D
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.055
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
N
CASE 221A-04
(TO–220AB)
Motorola Thyristor Device Data
3
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Motorola Thyristor Device Data
*T2800/D*
T2800/D