UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 11pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G DS TO-220 FDP Series G TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP12N50 FDPF12N50 500 Units V ±30 -Continuous (TC = 25oC) V 11.5 11.5 * 6.9 6.9 * ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt -Continuous (TC = 100oC) - Pulsed (Note 1) 46 * (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A 456 (Note 3) (TC = 25oC) PD TL 46 A mJ 4.5 V/ns 165 42 W 1.33 0.3 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP12N50 FDPF12N50 RθJC Symbol Thermal Resistance, Junction to Case Parameter 0.75 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2007 Fairchild Semiconductor Corporation FDP12N50 / FDPF12N50 Rev. A 1 Units o C/W www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 Device Marking FDP12N50 Device FDP12N50 Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF12N50 FDPF12N50 TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.5 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 500V, VGS = 0V - - 1 VDS = 400V, TC = 125oC - - 10 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.55 0.65 Ω - 11.5 - S - 985 1315 pF - 140 190 pF - 11 17 pF - 22 30 nC - 6 - nC - 9 - nC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 6A gFS Forward Transconductance VDS = 40V, ID = 6A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 11.5A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 11.5A RG = 25Ω (Note 4, 5) - 24 60 ns - 50 110 ns - 45 100 ns - 30 70 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 11.5A - - 1.4 V trr Reverse Recovery Time - 375 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 11.5A dIF/dt = 100A/μs - 3.5 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP12N50 / FDPF12N50 Rev. A 2 www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics ID,Drain Current[A] 10 Figure 2. Transfer Characteristics 40 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V ID,Drain Current[A] 30 1 o -55 C o 25 C o 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 10 1 20 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.5 100 1.0 VGS = 10V VGS = 20V 0.5 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.0 * Note : TJ = 25 C 0 6 12 18 ID, Drain Current [A] 24 1 0.0 30 Figure 5. Capacitance Characteristics Coss 1500 Ciss 2. 250μs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 6. Gate Charge Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 2000 Capacitances [pF] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance o 150 C 10 *Notes: 1. 250μs Pulse Test 0.1 0.05 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test *Note: 1. VGS = 0V 2. f = 1MHz 1000 500 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] FDP12N50 / FDPF12N50 Rev. A 0 30 3 *Note: ID = 11.5A 0 4 8 12 16 20 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9-1. Maximum Safe Operating Area - FDP12N50 *Notes: 1. VGS = 10V 2. ID = 6A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9-2. Maximum Safe Operating Area - FDPF12N50 100 100 20μs 100μs 10 ID, Drain Current [A] ID, Drain Current [A] 20μs 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 100μs 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC * Notes : 0.1 o o 1. TC = 25 C 1. TC = 25 C o 0.01 200 o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0.01 800 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 10. Maximum Drain Current vs. Case Temperature 14 ID, Drain Current [A] 12 10 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] FDP12N50 / FDPF12N50 Rev. A 150 4 www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET Typical Performance Characteristics (Continued) FDP12N50 / FDPF12N50 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP12N50 Thermal Response [ZθJC] 3 1 0.5 0.1 0.2 PDM 0.1 0.05 0.01 t1 0.02 0.01 Single pulse 1E-3 -5 10 t2 *Notes: o 1. ZθJC(t) = 0.75 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 0 10 10 10 Rectangular Pulse Duration [sec] 1 10 10 Figure 11-2. Transient Thermal Response Curve - FDPF12N50 Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 0.1 t1 0.02 0.01 t2 * Notes : Single pulse 0.01 -4 10 FDP12N50 / FDPF12N50 Rev. A PDM 0.05 o 1. ZθJC(t) = 3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 5 2 10 3 10 www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP12N50 / FDPF12N50 Rev. A 6 www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP12N50 / FDPF12N50 Rev. A 7 www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET FDP12N50 / FDPF12N50 Rev. A 8 www.fairchildsemi.com FDP12N50 / FDPF12N50 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 FDP12N50 / FDPF12N50 Rev. A +0.10 0.50 –0.05 4.70 ±0.20 0.35 ±0.10 9 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® EcoSPARK FACT Quiet Series™ ® FACT ® FAST FastvCore™ FPS™ ® FRFET SM Global Power Resource Green FPS™ ® POWEREDGE Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ ® SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ ® OPTOLOGIC ® OPTOPLANAR PDP-SPM™ ® Power220 ® Power247 SuperSOT™-8 SyncFET™ ® The Power Franchise ™ TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ ® UHC UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I29 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com