MOTOROLA Order this document by MAC310/D SEMICONDUCTOR TECHNICAL DATA MAC310 Series MAC310A Series Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • Sensitive Gate Triggering in Three Trigger Modes for AC Triggering on Sinking Current Sources (MAC310 Series) • Four Mode Triggering (10 mA) for Drive Circuits that Source Current (MAC310A Series) • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation • Center Gate Geometry for Uniform Current Spreading TRIACs 10 AMPERES RMS 200 thru 600 VOLTS MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to 110°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC310-4, MAC310A4 MAC310-6, MAC310A6 MAC310-8, MAC310A8 On-State RMS Current (TC = 80°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle 60 Hz, TJ = 110°C) Circuit Fusing (t = 8.3 ms) p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs) Peak Gate Current (t Average Gate Power (TC = 80°C, t p 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Mounting Torque Symbol Value VDRM 200 400 600 IT(RMS) 10 Amps ITSM 100 Amps I2t 40 A2s IGM ±2 Amps VGM ±10 Volts PGM 20 Watts PG(AV) 0.5 Watts TJ –40 to 110 °C Tstg –40 to 150 °C — 8 in-lb 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 Unit Volts (continued) 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Symbol Min Typ Max Unit TJ = 25°C IDRM — — — — 10 2 mA p 2 ms, Duty Cycle p 2%) VTM — — 2 Volts Peak Blocking Current (VD = Rated VDRM, TJ = 110°C) Peak On-State Voltage (ITM = 14 A Peak, Pulse Width Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only (VD = Rated VDRM, TC = 110°C, RL = 10 k) All Trigger Modes VGT mA — — — — 5 10 Volts — — — — 2 2.5 0.2 — — Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) IH — — 15 mA Gate-Controlled Turn-On Time (VD = Rated VDRM, ITM = 14 A Peak, IG = 30 mA) tgt — 1.5 — µs dv/dt — 25 — V/µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 110°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A Peak, Commutating di/dt = 5 A/ms, Gate Unenergized, TC = 80°C) 120 110 100 30° 60° 90° 180° 90 dc 80 0 2 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating 2 10 PAV , AVERAGE POWER (WATTS) TC, CASE TEMPERATURE ( °C) 20 16 dc 180° 120° 90° 60° 12 8 30° 4 0 0 2 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMPS) 10 Figure 2. On-State Power Dissipation Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T SEATING PLANE C S STYLE 4: PIN 1. 2. 3. 4. 4 Q A U 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 H K Z R L V J G D DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 N CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC310/D* MAC310/D