Order this document by BRX44/D SEMICONDUCTOR TECHNICAL DATA PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. • • • • Sensitive Gate Trigger Current — 200 µA Maximum Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C Low Holding Current — 5 mA Maximum Glass-Passivated Surface for Reliability and Uniformity SCRs 0.8 AMPERE RMS 30 TO 400 VOLTS CASE 29-04 (TO-226AA) STYLE 3 WITH TO-18 LEADFORM* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit VDRM, VRRM 30 60 100 200 400 Volts IT(RMS) 0.8 Amp Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) ITSM 8 Amps Circuit Fusing Considerations, TA = 25°C (t = 8.3 ms) I2t 0.15 A2s Peak Gate Power — Forward, TA = 25°C PGM 0.1 Watt Peak Gate Current Forward, TA = 25°C (300 µs, 120 PPS) IGFM 1 Amp Peak Gate Voltage — Reverse VGRM 5 Volts TJ –40 to +125 °C Tstg –40 to +150 °C +230 °C Peak Repetitive Forward and Reverse Blocking Voltage (TJ = 25 to 125°C, RGK = 1000 Ω) BRX44 BRX45 BRX46 BRX47 BRX49 Forward Current RMS (All Conduction Angles) Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Lead Solder Temperature ( 1.5 mm from case, 10 s max.) t *European part numbers only . Package is Case 29 with Leadform 18. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 75 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000 Ω unless otherwise noted.) Characteristic Symbol Min Max Unit Peak Forward Blocking Current (VD = Rated VDRM @ TC = 125°C) IDRM — 100 µA Peak Reverse Blocking Current (VR = Rated VRRM @ TC = 125°C) Forward “On” Voltage(1) (ITM = 1 A Peak @ TA = 25°C) IRRM — 100 µA VTM — 1.7 Volts Gate Trigger Current (Continuous dc)(2) (Anode Voltage = 7 Vdc, RL = 100 Ohms) TC = 25°C IGT — 200 µA Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7 Vdc, RL = 100 Ohms) (Anode Voltage = Rated VDRM, RL = 100 Ohms) TC = 25°C TC = –40°C TC = 125°C VGT — — 0.1 0.8 1.2 — Volts Holding Current (Anode Voltage = 7 Vdc, initiating current = 20 mA) TC = 25°C TC = –40°C IH — — 5 10 mA p 1%. FIGURE 1 — CURRENT DERATING (REFERENCE: CASE TEMPERATURE) 130 α α = CONDUCTION ANGLE 120 FIGURE 2 — CURRENT DERATING (REFERENCE: AMBIENT TEMPERATURE) CASE MEASUREMENT POINT — CENTER OF FLAT PORTION 110 100 dc 90 80 α = 30 60 70 90 120 180 60 α α = CONDUCTION ANGLE 110 TYPICAL PRINTED CIRCUIT BOARD MOUNTING 90 70 50 α = 30 60 30 50 0 0.1 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 2 130 TC, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 1. Forward current applied for 1 ms maximum duration, duty cycle 2. RGK current is not included in measurement. 0.5 0 0.1 0.2 90 120 0.3 180 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Motorola Thyristor Device Data PACKAGE DIMENSIONS A B R STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE P L F SEATING PLANE K D X X G J H V C SECTION X–X 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– CASE 029–04 (TO–226AA) CASE 029–04 (TO–226AA) ISSUE AD DATE 12/11/92 Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *BRX44/D* BRX44/D