Order this document by MC33169/D The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a priority management system of drain switching, ensuring that the negative voltage is always present before turning “on” the Power Amplifier. Additional features include an idle mode input and a direct drive of the N–Channel drain switch transistor. This product is available in two versions, – 2.5 and – 4.0 V. The – 4.0 V version is intended for supplying RF modules for GSM and DCS1800 applications, whereas the – 2.5 V version is dedicated for DECT and PHS systems. • • • • • • GaAs POWER AMPLIFIER SUPPORT IC SEMICONDUCTOR TECHNICAL DATA Negative Regulated Output for Full Depletion of GaAs MESFETs 14 Drain Switch Priority Management Circuit CMOS Compatible Inputs 1 Idle Mode Input (Standby Mode) for Very Low Current Consumption Output Signal Directly Drives N–Channel FET DTB SUFFIX PLASTIC PACKAGE CASE 948G (TSSOP–14) Low Startup and Operating Current PIN CONNECTIONS Simplified Block Diagram C2 Input 1 C3 + VBB Double 12 + – – + C1 C2 1 VBB 11 3 Triple + C4 – 2 + VCC 14 8 VBB Generator MC33169 (Voltage Tripler) Tx Power Control 9 Input Priority Management 13 Idle Mode Input 6 Gnd VBattery (2.7 to 7.0 V) Gate Drive Output RF Out 2 13 Idle Mode Input C1 Input 3 12 VBB Double 11 VBB Triple 10 Sense Input Gnd 6 9 Tx Power Control Input VO Charge Pump 7 Capacitor– 8 Gate Drive Output (Top View) Power Amplifier Sense VCC C1/C2 VO Output 4 VO Charge Pump Capacitor+ 5 MMSF4N01HD RF In 14 10 Sense Input Negative Generator Charge Pump 7 – + Cp ORDERING INFORMATION 5 4 – + VO Ci Output (– 2.5 V or – 4.0 V) C + f Rf This device contains 148 active transistors. This document contains information on a new product. Specifications and information herein are subject to change without notice. MOTOROLA ANALOG IC DEVICE DATA Device MC33169DTB–4.0 MC33169DTB–2.5 Motorola, Inc. 1996 Operating Temperature Range Package TA = –40° to +85°C TSSOP–14 Rev 1 1 MC33169 MAXIMUM RATINGS Pin Symbol Value Unit Power Supply Voltage Rating 14 VCC 9.5 V Tx Power Control Input 9 VTx VCC V Idle Mode Input 13 Vi VCC V Sense Input 10 VSense –5.0 to 0 V Negative Generator Output Source Current 4 ISS 20 mA Charge Pump Capacitor Current – Imax 60 mA Diode Forward Current – IFmax 60 mA Gate Drive Output Current 8 IGO 5.0 mA Power Dissipation and Thermal Characteristics Maximum Power Dissipation @ TA = 50°C Thermal Resistance, Junction–to–Air Operating Junction Temperature – PD RθJA TJ 417 240 +150 mW °C/W °C Operating Ambient Temperature – TA –40 to +85 °C Storage Temperature Range – Tstg –60 to +150 °C NOTE: ESD data available upon request. MC33169–4.0 ELECTRICAL CHARACTERISTICS (VCC = 4.8 V. For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted.) Characteristic Pin Symbol Min Typ Max Unit – fosc 90 100 110 kHz Oscillator Duty Cycle – DC 35 50 65 % Output Voltage (VCC = 3.0 V, IO = 3.0 mA) Double Voltage Triple Voltage Triple Voltage (VCC = 7.2 V, IO = 3.0 mA) 12 11 11 VBBD VBBT VBBT 4.6 6.1 – 5.0 7.0 11.2 – – – Output Voltage (IO = 3.0 mA) 4 VO –3.75 –4.0 –4.25 Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) (IO = 0 to 5.0 mA) 4 Vr – 2.0 – VIH VIL IIH IIL 2.0 0 10 – – – – – 2.7 0.5 80 1.0 V V µA µA VTx VTx(off) VTx(on) Rin B 0 – – – – – 0.7 2.7 90 1.0 3.1 – – – – V V V kΩ MHz VGO – – 3.0 0.5 – – V IGO – VCC+2.7 – mA Vsense –3.0 –3.2 – V VBB GENERATOR (VOLTAGE TRIPLER) Oscillator Frequency V NEGATIVE GENERATOR OUTPUT V mVpp PRIORITY MANAGEMENT SECTION Idle Mode Input Input Voltage High State (Logic 1) Input Voltage Low State (Logic 0) Input Current High State (Logic 1) Input Current Low State (Logic 0), i.e. Standby Mode 13 Tx Power Control Input Input Voltage Range Input Voltage “Off” State (Zero RF Output Level) Input Voltage “On” State (Maximum RF Output Level) Input Resistance Bandwidth (– 3.0 dB) 9 Gate Drive Output Voltage (VTx = 0 V) Voltage (VTx = 3.0 V) Peak Current (Source and Sink) (VTx = 3.0 V) 8 Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 2 MOTOROLA ANALOG IC DEVICE DATA MC33169 MC33169–4.0 ELECTRICAL CHARACTERISTICS (continued) (VCC = 4.8 V. For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted.) Characteristic Pin Symbol Min Typ Max Unit ICC Operating (VTx = 3.0 V, IO = 3.0 mA) – ICC – 10 15 mA ICC Operating (VTx = 0 V, IO = 3.0 mA) (VTx = 0 V, IO = 0 mA) – ICC – – 12 4.0 15 5.0 Standby Mode (Idle Mode Input = 0 V) – – – 1.0 TOTAL DEVICE POWER CONSUMPTION ICC mA µA MC33169–4.0 ELECTRICAL CHARACTERISTICS (VCC = 2.7 V. For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted.) Characteristic Pin Symbol Min Typ Max Unit – fosc 90 100 110 kHz Oscillator Duty Cycle – DC 35 50 65 % Output Voltage (VCC = 3.0 V, IO = 3.0 mA) Double Voltage Triple Voltage Triple Voltage (VCC = 7.2 V, IO = 3.0 mA) 12 11 11 VBBD VBBT VBBT 4.6 6.1 – 5.0 7.0 11.2 – – – Output Voltage (IO = 1.0 mA) 4 VO – 3.75 – 4.0 – 4.25 Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) (IO = 0 to 5.0 mA) 4 Vr – 2.0 – VIH VIL IIH IIL 2.0 0 10 – – – – – 2.7 0.5 80 1.0 V V µA µA VTx VTx(off) VTx(on) Rin B 0 – – – – – 0.7 2.7 90 1.0 3.0 – – – – V V V kΩ MHz VGO – – 3.0 0.5 – – V mA V VBB GENERATOR (VOLTAGE TRIPLER) Oscillator Frequency V NEGATIVE GENERATOR OUTPUT V mVpp PRIORITY MANAGEMENT SECTION Idle Mode Input Input Voltage High State (Logic 1) Input Voltage Low State (Logic 0) Input Current High State (Logic 1) Input Current Low State (Logic 0), i.e. Standby Mode 13 Tx Power Control Input Input Voltage Range Input Voltage “Off” State (Zero RF Output Level) Input Voltage “On” State (Maximum RF Output Level) Input Resistance Bandwidth (– 3.0 dB) 9 Gate Drive Output Voltage (VTx = 0 V) Voltage (VTx = 3.0 V) Peak Current (Source and Sink) (VTx = 3.0 V) 8 IGO – VCC+2.7 – Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 Vsense –3.0 –3.2 – ICC Operating (VTx = 3.0 V) (IO = 3.0 mA) (IO = 1.0 mA) 14 ICC – – – – 15 9.0 ICC Operating (VTx = 0 V) (IO = 3.0 mA) (IO = 1.0 mA) (IO = 0 mA) 14 – – – – – 4.5 13 9.0 6.0 Standby Mode (Idle Mode Input = 0 V) 14 – – 1.0 TOTAL DEVICE POWER CONSUMPTION MOTOROLA ANALOG IC DEVICE DATA mA ICC ICC mA µA 3 MC33169 MC33169–2.5 ELECTRICAL CHARACTERISTICS (VCC = 4.8 V. For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted.) Characteristic Pin Symbol Min Typ Max Unit – fosc 90 100 110 kHz Oscillator Duty Cycle – DC 35 50 65 % Output Voltage (VCC = 3.0 V, IO = 3.0 mA) Double Voltage Triple Voltage Triple Voltage (VCC = 7.2 V, IO = 3.0 mA) 12 11 11 VBBD VBBT VBBT 4.6 6.1 – 5.0 7.0 11.2 – – – Output Voltage (IO = 3.0 mA) (IO = 5.0 mA, VCC = 6.0 V) 4 VO – 2.35 – – 2.5 – 2.5 – 2.65 – Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) (IO = 0 to 5.0 mA) 4 – 2.0 8.0 VIH VIL IIH IIL 2.0 0 10 – – – – – 2.7 0.5 80 1.0 V V µA µA VTx VTx(off) VTx(on) Rin B 0 – – – – – 0.7 2.7 90 1.0 3.0 – – – – V V V kΩ MHz VGO – – 3.0 0.5 – – V IGO – VCC+2.7 – mA VBB GENERATOR (VOLTAGE TRIPLER) Oscillator Frequency V NEGATIVE GENERATOR OUTPUT V Vr mVpp PRIORITY MANAGEMENT SECTION Idle Mode Input Input Voltage High State (Logic 1) Input Voltage Low State (Logic 0) Input Current High State (Logic 1) Input Current Low State (Logic 0), i.e. Standby Mode 13 Tx Power Control Input Input Voltage Range Input Voltage “Off” State (Zero RF Output Level) Input Voltage “On” State (Maximum RF Output Level) Input Resistance Bandwidth (– 3.0 dB) 9 Gate Drive Output Voltage (VTx = 0 V) Voltage (VTx = 3.0 V) Peak Current (VTx = 3.0 V) 8 Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 Vsense –2.0 –2.3 – V ICC Operating (VTx = 3.0 V, IO = 3.0 mA) 14 ICC – 14 17 mA ICC Operating (VTx = 0 V, IO = 3.0 mA) (VTx = 0 V, IO = 0 mA) 14 ICC – – 13.5 4.5 16 6.0 Standby Mode (Idle Mode Input = 0 V) 14 – – 1.0 TOTAL DEVICE POWER CONSUMPTION ICC mA µA PRIORITY MANAGEMENT TRUTH TABLE Control Inputs 4 Outputs Idle Mode Tx Power Control VO Gate Drive 0 1 0 1 0 0 1 1 Off –2.5 or – 4.0 V Off –2.5 or – 4.0 V 0.5 V max 0.5 V max 0.5 V max VCC + 2.7 V min MOTOROLA ANALOG IC DEVICE DATA MC33169 PIN FUNCTION DESCRIPTION Pin Name Description 1 C2 Input This is the positive pin for the charge pump capacitor in the voltage doubler. 2 C1/C2 This is the negative pin for the charge pump capacitors. 3 C1 Input This is the positive pin for the charge pump capacitor in the voltage tripler. 4 VO Output It delivers a regulated negative voltage of –4.0 V or –2.5 V depending on the product version. It can source an output current in excess of 5.0 mA. 5 VO Charge Pump Capacitor + This is the positive pin for the capacitor in the inverting charge pump. 6 Gnd This pin is Ground for both signal and power circuitry. 7 VO Charge Pump Capacitor – This is the negative pin for the capacitor in the inverting charge pump. 8 Gate Drive Output This is the output of the gate amplifier which directly drives the gate of an N–Channel MOSFET. It can sink and source peak currents up to 3.0 mA. 9 Tx Power Control Input The input signal applied on this pin controls the N–Channel switching MOSFET in follower mode and therefore, linearly controls the RF output voltage. 10 Sense Input Pin It senses the negative voltage directly on the Power Amplifier. It is also the input pin of an internal Undervoltage Lockout circuit which blocks the switching of the N–Channel MOSFET if the sensed voltage is more positive than –3.0 V (–4.0 V version) or –2.0 V (–2.5 V version). 11 VBB Triple This is the positive pin of the output filter capacitor in the voltage tripler. The triple voltage at that pin is used internally to supply the inverting charge pump and the gate amplifier. 12 VBB Double This is the positive pin of the output filter capacitor in the voltage doubler. 13 Idle Mode Input This pin is used to set the circuit in Low Power Consumption Standby mode. It is CMOS compatible, i.e. a voltage lower than 0.5 V applied on this pin makes the device go into Standby mode in which the current consumption is lower than 1.0 µA. The MC33169 is then awakened by a voltage higher than 2.0 V applied on that pin. 14 VCC This is the supply input pin for the MC33169, VCC voltage ranges from 2.7 V to 7.2 V. Figure 1. MC33169 Representative Block Diagram C2 1 C1 2 VCC 14 3 Priority Management VBB Double 12 Cd VBB Triple 11 Ct Positive Charge Pump Standby Circuit Positive Regulator Idle Mode 13 Input Oscillator Voltage Reference Negative Regulator (–4.0 or –2.5 V) UVLO VGout VDD 8 RF In Negative Charge Pump 6 Gnd 7 5 Cp MOTOROLA ANALOG IC DEVICE DATA Gate Amplifier VO + VBattery 4 10 9 Tx(on) RF Out GaAs PA Vsense Cn 5 MC33169 Figure 2. Operating Current versus Temperature Figure 3. Operating Current versus Temperature 5.0 15 VCC = 4.8 V 4.0 I CC , OPERATING (mA) I CC , OPERATING (mA) 4.5 VCC = 2.7 V 3.5 VTx = 0 V IO = 0 mA 3.0 2.5 –50 –25 0 25 50 75 VCC = 4.8 V 14 13 12 VCC = 2.7 V 11 VTx = 0 V IO = 0 mA 10 –50 100 –25 TA, AMBIENT TEMPERATURE (°C) 0 25 50 Figure 4. Operating Current versus Temperature 8.0 VTx = 3.0 V I CC , OPERATING (mA) I CC , OPERATING (mA) VCC = 4.8 V 15 VCC = 2.7 V 14 VTx = 3.0 V IO = 3.0 mA 13 –25 0 25 50 75 7.6 7.2 VTx = 0 V 6.8 VCC = 2.7 V IO = 1.0 mA 6.4 6.0 –50 100 –25 TA, AMBIENT TEMPERATURE (°C) 0 25 50 75 100 TA, AMBIENT TEMPERATURE (°C) Figure 6. Output Voltage versus Temperature Figure 7. Output Voltage versus Temperature –4.04 –4.04 –4.035 ISS = 1.0 mA –4.03 –4.025 ISS = 3.0 mA –4.02 –4.015 VCC = 2.7 V –4.01 ISS = 3.0 mA –4.02 OUTPUT VOLTAGE (V) VSS, OUTPUT VOLTAGE (V) 100 Figure 5. Operating Current versus Temperature 16 12 –50 75 TA, AMBIENT TEMPERATURE (°C) –4.0 –3.98 VCC = 4.8 V –3.96 –4.005 –4.0 –50 –25 0 25 50 TA, AMBIENT TEMPERATURE (°C) 6 75 100 –3.94 –50 –25 0 25 50 75 100 TA, AMBIENT TEMPERATURE (°C) MOTOROLA ANALOG IC DEVICE DATA MC33169 Figure 9. VTx Control Voltage versus Gate Drive Output Voltage Figure 8. Output Voltage versus Load Current VGO, GATE DRIVE OUTPUT VOLTAGE (V) –4.04 OUTPUT VOLTAGE (V) –4.035 25°C –25°C 0°C 85°C –4.03 –4.025 –4.02 –4.015 –4.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 LOAD CURRENT (mA) 0.5 1.0 1.5 2.0 2.5 3.0 VTx, POWER CONTROL INPUT VOLTAGE (V) OPERATING DESCRIPTION The MC33169 is a power amplifier support IC that is designed to properly switch “on” or “off” a MESFET Power Amplifier either manually or by microprocessor. Controlling the power drain of the RF Amplifier extends operating battery life in many portable systems. Outputs The IC is designed to provide a –4.0 V or –2.5 V bias to the gate of the RF Ampllifier MESFET devices prior to application of a positive battery voltage to the drain. The negative output voltage can provide up to 5.0 mA of current. The positive voltage control requires an external N–Channel logic level MOSFET, connected as a source follower. The Gate Drive Output, Pin 8, can source or sink 3.0 mA to the external MOSFET. The low drive current slows the MOSFET switching speed, thereby minimizing voltage MOTOROLA ANALOG IC DEVICE DATA glitches on the VCC line which could cause disturbances to other circuitry. Inputs A Sense Input, Pin 10, protects the Power Amplifier load by monitoring the level of the negative output voltage. If the negative voltage magnitude falls below a preset level, 3.2 V typical for the –4.0 V version or 2.3 V for the –2.5 V version, an undervoltage lockout circuit disables the external MOSFET gate drive. The Tx Power Control Input controls the N–Channel external switching MOSFET in source follower mode, which allows linear control of the RF Output voltage level. The Idle mode input is CMOS compatible, allowing the RF Amplifier to be placed in a standby mode, drawing less than 1.0 µA from the power source. 7 MC33169 Figure 10. Class 4 GSM with a Two–Stage Integrated Power Amplifier (I.P.A.) 0V VBatt = 4.8 V Tx Power (4 cells Control 3.0 V NlCd/NIMH) Input Idle 0V 3.0 V MMSF4N01HD 100 G 4 6 S 3 7 Drain S 2 5 C2 0.1 1 14 2 13 3 12 C1 0.1 Ci 0.22 4 Cp 1.0 8 1 C4 1.0 100 MMBD701 LT1 68 C3 1.0 MC33169 11 5 10 6 9 7 8 9 .047 47 pF 3.3 k VG2 tune 1.0 k VG1 tune 8.2 nH 50 Ω In MRF IC 093 8 10 7 11 6 12 Out 5 13 Out 4 14 3 15 In 2 16 1 47 pF .047 2 mm 30 Ω 5.6 pF Cf 0.22 6.8 pF Grounded Backside 4 mm 47 pF 50 Ω Out 30 Ω 5.6 pF RF 330 – 4.0 V Figure 11. Transfer Characteristic for Gate Drive Output 1.4 IPA RF OUT (Vrms) 1.2 VBatt = 4.8 V Pin = 10 dBm VIdle = 3.0 V 1.0 0.8 Vramp: 40 Hz sinusoidal voltage set for 95% AM depth on RF 0.6 TA = 25°C VBatt = 4.8 V VIdle = 3.0 V 0.4 Peak output power: 34.6 dBm 0.2 0 0 0.5 1.0 1.5 2.0 2.5 VTx (V) 8 MOTOROLA ANALOG IC DEVICE DATA MC33169 CURVES RELATED TO APPLICATION GSM CLASS 4 Figure 12. RF Output Voltage (40 Hz/95% AM) and VTx Driving Voltage Figure 13. Idle, PA Drain, RF Output and VO Voltages During a Burst Period Output RF Voltage Idle Voltage VTx AND RF OUTPUT (V) VTx 0V 0V VTx 0V VT Negative Voltage –50 ms –0 V 0s –25 ms TIMEBASE = 5.0 ms/DIV VERTICAL SCALE = 0.5 V/DIV –350 µs Figure 14. RF Output Voltage, PA Drain Voltage and VTx Driving Voltage, During Fall Time Output RF Voltage 150 µs TIMEBASE = 5.0 µs/DIV VERTICAL SCALE = 0.5 V/DIV VO 850 µs Figure 15. RF Output Voltage, PA Drain Voltage and VTx Driving Voltage, During Rise Time VTx VTx PA Drain Voltage PA Drain Voltage Output RF Voltage Output RF Voltage –13.4 µs 11.6 µs TIMEBASE = 5.0 µs/DIV VERTICAL SCALE = 0.5 V/DIV MOTOROLA ANALOG IC DEVICE DATA 36.6 µs –13.4 µs 11.6 µs VERTICAL SCALE = 0.5 V/DIV 36.6 µs 9 MC33169 Figure 16. AMPS version with MRFIC0913, Integrated Power Amplifier (I.P.A.) 0V VBatt = 3.6 V Tx Power (3 cells Control 3.0 V NlCd/NIMH) Input Idle 0V 3.0 V MMSF4N01HD 100 C2 0.1 1 14 2 13 Ci 0.22 3 12 G 4 6 S 3 S 2 7 Drain 68 8 C3 1.0 C1 0.1 5 1 C4 1.0 100 4 MMBD701 LT1 Cp 1.0 MC33169 11 5 10 6 9 7 8 9 .047 68 pF 3.3 k VG2 tune 1.0 k VG1 tune 50 Ω In 10 nH MRFIC0913 8 10 7 11 6 12 Out 5 13 Out 4 14 3 15 In 2 16 1 68 pF .047 2.5 mm 30 Ω 5.6 pF Cf 0.22 7 mm 68 pF 50 Ω Out 30 Ω 5.6 pF Rf 330 6.8 pF Grounded Backside – 4.0 V Figure 17. MC33169 with GaAs RF Power Amplifier Tx Power Control VBatt Input 0V 3.0 V Idle 0V 3.0 V MMSF4N01HD 100 6 G 4 S 3 7 Drain S 2 5 C2 0.1 1 14 2 13 3 12 C1 0.1 Ci 0.22 100 Cp 1.0 8 1 C4 1.0 4 MMBD701 LT1 68 C3 1.0 MC33169 11 5 10 6 9 7 8 VDD 50 Ω In RF In RF Out 50 Ω Out GaAs Power Amplifier VO Cf 0.22 Rf 330 – 4.0 V 10 MOTOROLA ANALOG IC DEVICE DATA MC33169 OUTLINE DIMENSIONS DTB SUFFIX PLASTIC PACKAGE CASE 948G–01 (TSSOP–14) ISSUE O 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION: MILLIMETER. 3 DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4 DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5 DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6 TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7 DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. S S N 2X 14 L/2 0.25 (0.010) 8 M B –U– L PIN 1 IDENT. F 7 1 0.15 (0.006) T U N S DETAIL E K A –V– ÉÉ ÇÇ ÇÇ ÉÉ ÇÇ K1 J J1 SECTION N–N –W– C 0.10 (0.004) –T– SEATING PLANE D G MOTOROLA ANALOG IC DEVICE DATA H DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 11 MC33169 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 12 ◊ *MC33169/D* MC33169/D MOTOROLA ANALOG IC DEVICE DATA