MOTOROLA MRFIC0917

Order this document
by MRFIC0917/D
SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
! This integrated circuit is intended for GSM class IV handsets. The device is
specified for 2.5 Watts output power and 43% minimum power added
efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve
this superior performance, Motorola’s planar GaAs MESFET process is
employed. The device is packaged in the PFP–16 Power Flat Pack package
which gives excellent thermal performance through a solderable backside
contact.
• Usable Frequency Range 800 to 1000 MHz
• Typical Output Power: 34.5 dBm @ 3.6 Volts
• 43% Minimum Power Added Efficiency
• Low Parasitic, High Thermal Dissipation Package
• Order MRFIC0917R2 for Tape and Reel.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
• Device Marking = M0917
900 MHz
GSM CELLULAR
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 978–02
(PFP–16)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Supply Voltage, Normal Conditions
VD1, VD2
6
Vdc
Supply Voltage under Load Stress
VD1, VD2
4.5
Vdc
RF Input Power
Pin
15
dBm
Gate Voltage
VSS
–6
Vdc
TA
–40 to + 85
°C
Tstg
– 65 to +150
°C
RθJC
15
°C/W
Rating
Ambient Operating Temperature
Storage Temperature
Thermal Resistance, Junction to Case
GND
9
8
N/C
VD1
10
7
VD2
GND
11
6
GND
VG2
12
5
RF OUT
VG1
13
4
RF OUT
GND
14
3
RF OUT
RF IN
15
2
VSS
N/C
16
1
GND
Pin Connections and Functional Block Diagram
MOTOROLA
RF DEVICE DATA

Motorola, Inc. 1998
MRFIC0917
1
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
Unit
VD1, VD2
2.7 to 5.5
Vdc
Gate Voltage
VSS
–5 to –3
Vdc
RF Frequency Range
fRF
800 to 1000
MHz
RF Input Power
PRF
6 to 13
dBm
Supply Voltage
ELECTRICAL CHARACTERISTICS (VD1, VD2 = 3.6 V, VSS = –4 V, Pin = 12 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
Period, TA = 25°C unless otherwise noted. Measured in Circuit Configuration Shown in Figure 1.)
Min
Characteristic
Typ
Max
Unit
Frequency Range
880
—
915
MHz
Output Power
34
34.5
—
dBm
Power Added Efficiency
43
—
—
%
Input VSWR
—
2:1
—
VSWR
Harmonic Output
2nd
3rd
—
—
—
—
–30
–35
32.5
33
—
dBm
Output Power, Isolation (VD1, VD2 = 0 V)
—
–20
–15
dBm
Noise Power in 100 kHz, 925 to 960 MHz
—
—
–90
dBm
Stability – Spurious Output (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load
VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle,
VD1, VD2 Adjusted for Specified Pout)
—
—
–60
dBc
dBc
Output Power at low voltage (VD1, VD2 = 3.0 V)
Load Mismatch Stress (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load VSWR =
10:1 at any Phase Angle, VD1, VD2 Adjusted for Specified Pout)
No Degradation in Output Power after Returning to
Standard Conditions
3 dB VDD Bandwidth (VD1, VD2 = 0 to 4.5 V)
1
—
—
MHz
Negative Supply Current
—
—
1
mA
VD2
VD1
C9 C10
9
8
10
7
11
6
12
5
13
4
14
3
15
2
16
1
L2
C1
R4
T1
C2
T2
C3
RF OUT
R3
C5
L1
RF IN
C1, C3, C10 33 pF
C2, C6, C9 33 nF
C4
4.7 pF
C5
10 pF
C8
C8
L1
L2
6.8 pF
5.6 nH
10 Turn MicroSpring,
Coilcraft 1606–10 or
18 mm 50 Ω MICROSTRIP
C6 R1
C4
VSS
R1, R3 330 Ω
R4
1 kΩ
T1
2 mm 30 Ω MICROSTRIP
T2
3.5 mm 30 Ω MICROSTRIP
BOARD MATERIAL FR4
Figure 1. 900 MHz Reference Circuit
MRFIC0917
2
MOTOROLA RF DEVICE DATA
BATTERY
5
D
G
4
6
D
S
3
7
D
S
2
8
D
Q1
VRAMP
C17
STANDBY
R6
C13
1
14
2
13
3
12
4
11
5
10
6
9
7
8
1
R5
C11
C12
CR1
C16
C14
C9 C10
9
8
10
7
11
6
L2
C15
C1
12
5
13
4
14
3
15
2
16
1
C2
T1
R4
T2
C3
RF OUT
R3
U2
L1
RF IN
C6
C4
C8
R1
U1
R2
C1, C3, C10 33 pF
C2, C6, C9 33 nF
C4
4.7 pF
C5
10 pF
C7
220 nF
C8
6.8 pF
C11 to C16 1 µF
C17
0 to 5 nF Depending on
control bandwidth
C5
CR1
L1
L2
Q1
R1, R3
R2
MMBD701LT1
5.6 nH
10 Turn MicroSpring,
Coilcraft 1606–10 or 18 mm
50 Ω MICROSTRIP
MMSF4N01HD
330 Ω
100 Ω
C7
R4
1 kΩ
R5
470 Ω
R6
22 Ω
T1
2 mm 30 Ω MICROSTRIP
T2
3.5 mm 30 Ω MICROSTRIP
U1
MRFIC0917
U2
MC33169 (– 4 V Version)
BOARD MATERIAL FR4
Figure 2. GSM Application Circuit Configuration with Drain Switch
and MC33169 GaAs Power Amplifier Support IC
MOTOROLA RF DEVICE DATA
MRFIC0917
3
TYPICAL CHARACTERISTICS
34
52
PAE, POWER ADDED EFFICIENCY (%)
Pout , OUTPUT POWER (dBm)
TA = –40°C
33.5
25°C
33
32.5
85°C
32
Pin = 12 dBm
VD1 = VD2 = 3.0 V
VSS = –4.0 V
31.5
31
880
885
890
900
905
895
f, FREQUENCY (MHz)
910
51
TA = –40°C
50
49
25°C
48
47
85°C
46
Pin = 12 dBm
VD1 = VD2 = 3.6 V
VSS = –4.0 V
45
44
43
880
915
885
Figure 3. Output Power versus Frequency
PAE, POWER ADDED EFFICIENCY (%)
Pout , OUTPUT POWER (dBm)
35
25°C
34.5
85°C
34
33.5
Pin = 12 dBm
VD1 = VD2 = 3.6 V
VSS = –4.0 V
33
32.5
880
885
890
895
900
905
f, FREQUENCY (MHz)
910
52
915
VD1 = VD2 = 4.2 V
50
3.6 V
48
46
3.0 V
44
40
880
915
Pin = 12 dBm
VSS = –4.0 V
TA = 25°C
42
885
Figure 5. Output Power versus Frequency
890
895
900
905
f, FREQUENCY (MHz)
910
915
Figure 6. Power Added Efficiency
versus Frequency
40
36.4
–40°C
TA = –40°C
35.6
35
Pout , OUTPUT POWER (dBm)
36
Pout , OUTPUT POWER (dBm)
910
54
TA = –40°C
25°C
35.2
34.8
85°C
34.4
33.6
880
895
900
905
f, FREQUENCY (MHz)
Figure 4. Power Added Efficiency
versus Frequency
35.5
34
890
Pin = 12 dBm
VD1 = VD2 = 4.2 V
VSS = –4.0 V
885
890
895
900
905
f, FREQUENCY (MHz)
25°C
25
20
15
Pin = 12 dBm
VSS = –4.0 V
f = 900 MHz
10
5
910
Figure 7. Output Power versus Frequency
MRFIC0917
4
TA = 85°C
30
915
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VD1, VD2, DRAIN VOLTAGE (V)
Figure 8. Output Power versus Drain Voltage
MOTOROLA RF DEVICE DATA
5
TYPICAL CHARACTERISTICS
36
–40°C
50
34
Pout , OUTPUT POWER (dBm)
PAE, POWER ADDED EFFICIENCY (%)
55
45
85°C
40
35
30
TA = 25°C
25
20
Pin = 12 dBm
VSS = –4.0 V
f = 900 MHz
15
0.5
1
3
2
3.5
1.5
2.5
VD1, VD2, DRAIN VOLTAGE (V)
4
30
28
85°C
25°C
26
24
VD1 = VD2 = 3.6 V
VSS = –4.0 V
f = 900 MHz
22
20
–7
10
0
TA = –40°C
32
4.5
5
Figure 9. Power Added Efficiency
versus Drain Voltage
–5
–3
–1
1
3
5
7
Pin, INPUT POWER (dBm)
9
11
Figure 10. Output Power versus Input Power
PAE, POWER ADDED EFFICIENCY (%)
60
50
–40°C
40
85°C
30
20
TA = 25°C
VD1 = VD2 = 3.6 V
VSS = –4.0 V
f = 900 MHz
10
0
–8
–6
–4
–2
0
2
4
6
8
Pin, INPUT POWER (dBm)
10
12
14
Figure 11. Power Added Efficiency
versus Input Power
f
ZOL* (Ω)
Zin (Ω)
MHz
R
jX
R
jX
880
20.2
8.63
2.49
7.04
885
20.5
8.57
2.48
6.98
890
20.8
8.5
2.45
6.91
895
21.2
8.42
2.43
6.81
900
21.5
8.36
2.42
6.74
905
21.9
8.3
2.4
6.64
910
22.3
8.23
2.37
6.58
915
22.6
8.17
2.36
6.51
Table 1. Device Impedances Derived from Circuit Characterization
MOTOROLA RF DEVICE DATA
MRFIC0917
5
13
Table 2. Scattering Parameters
(VDD = 3 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 Ω System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
500
0.738
–86
12.71
–82
0.002
147
0.891
173
600
0.786
–83
5.05
–102
0.003
132
0.874
170
700
0.799
–113
11.56
–79
0.004
153
0.858
173
800
0.681
–115
8.44
–113
0.005
138
0.885
171
820
0.671
–116
7.93
–115
0.005
138
0.887
170
840
0.669
–117
7.54
–117
0.005
133
0.885
170
860
0.668
–118
7.30
–119
0.005
130
0.888
170
880
0.673
–119
7.18
–121
0.006
129
0.885
169
900
0.672
–120
7.07
–123
0.006
131
0.883
169
920
0.672
–122
6.90
–127
0.006
130
0.883
168
940
0.672
–123
6.65
–130
0.006
130
0.882
168
960
0.673
–124
6.37
–133
0.007
127
0.881
168
980
0.682
–126
6.10
–136
0.007
130
0.88
168
1000
0.679
–127
5.83
–138
0.006
123
0.881
167
1100
0.685
–134
4.81
–145
0.007
120
0.874
166
1200
0.705
–143
4.67
–152
0.008
121
0.868
165
1300
0.703
–152
4.06
–165
0.010
113
0.855
164
1400
0.704
–161
3.69
–175
0.011
106
0.838
163
1500
0.646
–174
3.19
160
0.011
86
0.826
166
MRFIC0917
6
MOTOROLA RF DEVICE DATA
Table 3. Scattering Parameters
(VDD = 3.6 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 Ω System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
500
0.737
–85
14.12
–84
0.002
135
0.887
174
600
0.792
–83
5.47
–103
0.002
130
0.866
170
700
0.799
–112
12.69
–80
0.004
157
0.853
174
800
0.687
–115
9.13
–115
0.005
131
0.881
171
820
0.681
–116
8.56
–117
0.005
131
0.882
171
840
0.680
–117
8.12
–119
0.005
132
0.882
170
860
0.678
–118
7.83
–121
0.005
131
0.883
170
880
0.680
–119
7.69
–123
0.005
129
0.882
170
900
0.681
–120
7.53
–125
0.006
133
0.882
169
920
0.680
–122
7.36
–129
0.006
127
0.879
169
940
0.681
–123
7.09
–132
0.006
130
0.878
169
960
0.681
–125
6.77
–135
0.006
121
0.878
168
980
0.688
–126
6.47
–137
0.006
123
0.878
168
1000
0.684
–128
6.18
–139
0.006
123
0.876
168
1100
0.690
–135
5.08
–147
0.007
116
0.870
166
1200
0.707
–143
4.90
–153
0.007
123
0.862
165
1300
0.701
–153
4.24
–167
0.009
112
0.852
164
1400
0.704
–162
3.83
–176
0.010
107
0.833
164
1500
0.643
–174
3.26
160
0.010
84
0.828
167
MOTOROLA RF DEVICE DATA
MRFIC0917
7
Table 4. Scattering Parameters
(VDD = 4.2 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 Ω System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
500
0.740
–85
15.59
–86
0.002
139
0.880
174
600
0.798
–84
5.71
–103
0.002
135
0.859
171
700
0.802
–112
13.82
–81
0.004
154
0.851
174
800
0.694
–116
9.82
–116
0.005
137
0.879
171
820
0.688
–116
9.20
–119
0.005
132
0.883
171
840
0.684
–117
8.70
–121
0.004
137
0.877
171
860
0.688
–119
8.37
–123
0.005
133
0.879
170
880
0.684
–120
8.20
–125
0.005
129
0.879
170
900
0.686
–121
8.03
–127
0.005
127
0.879
169
920
0.685
–123
7.82
–131
0.006
130
0.879
169
940
0.682
–124
7.53
–134
0.005
127
0.875
169
960
0.687
–126
7.18
–137
0.006
126
0.874
169
980
0.694
–127
6.84
–139
0.006
124
0.875
168
1000
0.686
–129
6.53
–141
0.006
123
0.873
168
1100
0.692
–137
5.34
–149
0.006
116
0.866
167
1200
0.704
–145
5.12
–155
0.007
122
0.861
165
1300
0.698
–154
4.41
–168
0.009
113
0.847
165
1400
0.695
–163
3.94
–178
0.010
104
0.835
164
1500
0.638
–175
3.34
159
0.009
84
0.828
167
MRFIC0917
8
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
Design Philosophy
The MRFIC0917 is a two–stage Integrated Power Amplifier
designed for use in cellular phones, especially for those used
in GSM Class IV, 3.6 V operation. Due to the fact that the input, output and some of the interstage matching is accomplished off chip, the device can be tuned to operate anywhere
within the 800 to 1000 MHz frequency range.
This capability makes the MRFIC0917 suitable for portable
cellular applications such as:
S
3.6 V 900 MHz DAMPS
S
3.6 V 900 MHz PDC
RF Circuit Considerations
The MRFIC0917 can be tuned by changing the values and/
or positions of the appropriate external components. Refer to
Figure 2, a typical GSM Class IV applications circuit.
The input match is a shunt–C, series–L, low–pass structure
and can be retuned as desired with the only limitation being the
on–chip 12 pF blocking capacitor. For saturated applications
such as GSM and analog cellular, the input match should be
optimized at the rated RF input power.
Interstage matching can be optimized by changing the value
and/or position of the decoupling capacitor on the VD1 supply
line. Moving the capacitor closer to the device or reducing the
value increases the frequency of resonance with the inductance of the device’s wirebonds and leadframe pin.
Output matching is accomplished with a two–stage low–pass
network as a compromise between bandwidth and harmonic
rejection. Implementation is through chip capacitors mounted
along a 30 or 50Ω microstrip transmission line. Values and
positions are chosen to present a 2Ω loadline to the device
while conjugating the device output parasitics. The network
must also properly terminate the second and third harmonics to
optimize efficiency and reduce harmonic output. When low–Q
commercial chip capacitors are used for the shunt capacitors,
loss can be reduced by mounting two capacitors in parallel to
achieve the total value needed.
Loss in circuit traces must also be considered. The output
transmission line and the bias supply lines should be at least
0.6 mm in width to accommodate the peak circulating currents
which can be as high as 2 amperes. The bias supply line which
supplies the output should include an RF choke of at least 8
nH, surface mount solenoid inductors or equivalent length of
microstrip lines. Discrete inductors will usually give better efficiency and conserve board space.
The DC blocking capacitor required at the output of the device is best mounted at the 50Ω impedance point in the circuit
where the RF current is at a minimum and the capacitor loss
will have less effect.
Power Control Using the MC33169
The MC33169 is a dedicated GaAs power amplifier support
IC which provides the –4 V required for VSS, an N–MOS drain
switch interface and driver and power supply sequencing. The
MC33169 can be used for power control in applications where
the amplifier is operated in saturation since the output power
in non–linear operation is proportional to VD2. This provides a
very linear and repeatable power control transfer function.
MOTOROLA RF DEVICE DATA
This technique can be used open–loop to achieve 20–25 dB
dynamic range over process and temperature variation. With
careful design and selection of calibration points, this technique can be used for GSM phase II control where 29 dB dynamic range is required, eliminating the need for the
complexity and cost of closed–loop control.
The transmit waveform ramping function required for systems such as GSM can be implemented with a simple Sallen
and Key filter on the MC33169 control loop. The amplifier is
then ramped on as the VRAMP pin is taken from 0 V to 3 V. To
implement the different power steps required for GSM, the
VRAMP pin is ramped between 0 V and the appropriate voltage
between 0 V and 3 V for the desired output power.
For closed–loop configurations using the MC33169,
MMSF4N01HD N–MOS switch and the MRFIC0917 provide a
typical 1 MHz 3 dB loop bandwidth. The STANDBY pin must
be enabled (3 V) at least 800 µs before the VRAMP pin goes
high and disabled (0 V) at least 20 µs before the VRAMP pin
goes low. This STANDBY function allows for the enabling of
the MC33169 one burst before the active burst thus reducing
power consumption.
Biasing Considerations
Gate bias is supplied to each stage separately through resistive division of the VSS voltage. The top of each divider is brought
out through pins 12 and 13 (VG2 and VG1 respectively) allowing
gate biasing through use of external resistors or positive voltages. This allows setting the quiescent current of each stage
separately.
For applications where the amplifier is operated close to
saturation, such as GSM and analog cellular, the gate bias
can be set with resistors. Variations in process and temperature will not affect amplifier performance significantly in these
applications. The values shown in the Figure 1 will set quiescent currents of 100 to 200 mA for the first stage and 600 to
1200 mA for the second stage.
For linear modes of operation, the quiescent current must
be more carefully controlled. For these applications, the VG
pins can be referenced to some tunable voltage which is set at
the time of radio manufacturing. Less than 1.0 mA is required
in the divider network so a DAC can be used as the voltage
source. Typical settings for 3.6 V linear operation are 150 mA
±5% for the first stage, and 750 mA ±5% for the second stage.
Conclusion
The MRFIC0917 offers the flexibility in matching circuitry and
gate biasing required for portable cellular applications. Together
with the MC33169 support IC, the device offers an efficient system solution for TDMA applications such as GSM where saturated amplifier operation is used.
Evaluation Boards
Evaluation boards are available for RF Monolithic Integrated Circuits. For a complete list of currently available
boards and ones in development for newly introduced
product, please contact your local Motorola Distributor or
Sales Office.
MRFIC0917
9
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D
e/2
D1
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
ÇÇÇ
ÉÉ
ÇÇÇ
ÉÉ
ÇÇÇ
S
b1
DATUM
PLANE
H
c
A A2
c1
b
aaa
DETAIL Y
C
SEATING
PLANE
M
C A
SECT W–W
S
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
L1
ccc C
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE –H–.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS –A– AND –B– TO BE DETERMINED AT
DATUM PLANE –H–.
q
aaa
bbb
ccc
W
MILLIMETERS
MIN
MAX
2.000
2.350
0.025
0.152
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
–––
0.600
0_
7_
0.200
0.200
0.100
GAUGE
PLANE
W
L
A1
1.000
0.039
DETAIL Y
CASE 978–02
ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax: [email protected] – TOUCHTONE 1–602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Back System
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
– http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
MRFIC0917
10
◊
MRFIC0917/D
MOTOROLA RF DEVICE
DATA