Order this document by MRFIC0917/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line ! This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.5 Watts output power and 43% minimum power added efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve this superior performance, Motorola’s planar GaAs MESFET process is employed. The device is packaged in the PFP–16 Power Flat Pack package which gives excellent thermal performance through a solderable backside contact. • Usable Frequency Range 800 to 1000 MHz • Typical Output Power: 34.5 dBm @ 3.6 Volts • 43% Minimum Power Added Efficiency • Low Parasitic, High Thermal Dissipation Package • Order MRFIC0917R2 for Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. • Device Marking = M0917 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT CASE 978–02 (PFP–16) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Supply Voltage, Normal Conditions VD1, VD2 6 Vdc Supply Voltage under Load Stress VD1, VD2 4.5 Vdc RF Input Power Pin 15 dBm Gate Voltage VSS –6 Vdc TA –40 to + 85 °C Tstg – 65 to +150 °C RθJC 15 °C/W Rating Ambient Operating Temperature Storage Temperature Thermal Resistance, Junction to Case GND 9 8 N/C VD1 10 7 VD2 GND 11 6 GND VG2 12 5 RF OUT VG1 13 4 RF OUT GND 14 3 RF OUT RF IN 15 2 VSS N/C 16 1 GND Pin Connections and Functional Block Diagram MOTOROLA RF DEVICE DATA Motorola, Inc. 1998 MRFIC0917 1 RECOMMENDED OPERATING RANGES Parameter Symbol Value Unit VD1, VD2 2.7 to 5.5 Vdc Gate Voltage VSS –5 to –3 Vdc RF Frequency Range fRF 800 to 1000 MHz RF Input Power PRF 6 to 13 dBm Supply Voltage ELECTRICAL CHARACTERISTICS (VD1, VD2 = 3.6 V, VSS = –4 V, Pin = 12 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms Period, TA = 25°C unless otherwise noted. Measured in Circuit Configuration Shown in Figure 1.) Min Characteristic Typ Max Unit Frequency Range 880 — 915 MHz Output Power 34 34.5 — dBm Power Added Efficiency 43 — — % Input VSWR — 2:1 — VSWR Harmonic Output 2nd 3rd — — — — –30 –35 32.5 33 — dBm Output Power, Isolation (VD1, VD2 = 0 V) — –20 –15 dBm Noise Power in 100 kHz, 925 to 960 MHz — — –90 dBm Stability – Spurious Output (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle, VD1, VD2 Adjusted for Specified Pout) — — –60 dBc dBc Output Power at low voltage (VD1, VD2 = 3.0 V) Load Mismatch Stress (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load VSWR = 10:1 at any Phase Angle, VD1, VD2 Adjusted for Specified Pout) No Degradation in Output Power after Returning to Standard Conditions 3 dB VDD Bandwidth (VD1, VD2 = 0 to 4.5 V) 1 — — MHz Negative Supply Current — — 1 mA VD2 VD1 C9 C10 9 8 10 7 11 6 12 5 13 4 14 3 15 2 16 1 L2 C1 R4 T1 C2 T2 C3 RF OUT R3 C5 L1 RF IN C1, C3, C10 33 pF C2, C6, C9 33 nF C4 4.7 pF C5 10 pF C8 C8 L1 L2 6.8 pF 5.6 nH 10 Turn MicroSpring, Coilcraft 1606–10 or 18 mm 50 Ω MICROSTRIP C6 R1 C4 VSS R1, R3 330 Ω R4 1 kΩ T1 2 mm 30 Ω MICROSTRIP T2 3.5 mm 30 Ω MICROSTRIP BOARD MATERIAL FR4 Figure 1. 900 MHz Reference Circuit MRFIC0917 2 MOTOROLA RF DEVICE DATA BATTERY 5 D G 4 6 D S 3 7 D S 2 8 D Q1 VRAMP C17 STANDBY R6 C13 1 14 2 13 3 12 4 11 5 10 6 9 7 8 1 R5 C11 C12 CR1 C16 C14 C9 C10 9 8 10 7 11 6 L2 C15 C1 12 5 13 4 14 3 15 2 16 1 C2 T1 R4 T2 C3 RF OUT R3 U2 L1 RF IN C6 C4 C8 R1 U1 R2 C1, C3, C10 33 pF C2, C6, C9 33 nF C4 4.7 pF C5 10 pF C7 220 nF C8 6.8 pF C11 to C16 1 µF C17 0 to 5 nF Depending on control bandwidth C5 CR1 L1 L2 Q1 R1, R3 R2 MMBD701LT1 5.6 nH 10 Turn MicroSpring, Coilcraft 1606–10 or 18 mm 50 Ω MICROSTRIP MMSF4N01HD 330 Ω 100 Ω C7 R4 1 kΩ R5 470 Ω R6 22 Ω T1 2 mm 30 Ω MICROSTRIP T2 3.5 mm 30 Ω MICROSTRIP U1 MRFIC0917 U2 MC33169 (– 4 V Version) BOARD MATERIAL FR4 Figure 2. GSM Application Circuit Configuration with Drain Switch and MC33169 GaAs Power Amplifier Support IC MOTOROLA RF DEVICE DATA MRFIC0917 3 TYPICAL CHARACTERISTICS 34 52 PAE, POWER ADDED EFFICIENCY (%) Pout , OUTPUT POWER (dBm) TA = –40°C 33.5 25°C 33 32.5 85°C 32 Pin = 12 dBm VD1 = VD2 = 3.0 V VSS = –4.0 V 31.5 31 880 885 890 900 905 895 f, FREQUENCY (MHz) 910 51 TA = –40°C 50 49 25°C 48 47 85°C 46 Pin = 12 dBm VD1 = VD2 = 3.6 V VSS = –4.0 V 45 44 43 880 915 885 Figure 3. Output Power versus Frequency PAE, POWER ADDED EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 35 25°C 34.5 85°C 34 33.5 Pin = 12 dBm VD1 = VD2 = 3.6 V VSS = –4.0 V 33 32.5 880 885 890 895 900 905 f, FREQUENCY (MHz) 910 52 915 VD1 = VD2 = 4.2 V 50 3.6 V 48 46 3.0 V 44 40 880 915 Pin = 12 dBm VSS = –4.0 V TA = 25°C 42 885 Figure 5. Output Power versus Frequency 890 895 900 905 f, FREQUENCY (MHz) 910 915 Figure 6. Power Added Efficiency versus Frequency 40 36.4 –40°C TA = –40°C 35.6 35 Pout , OUTPUT POWER (dBm) 36 Pout , OUTPUT POWER (dBm) 910 54 TA = –40°C 25°C 35.2 34.8 85°C 34.4 33.6 880 895 900 905 f, FREQUENCY (MHz) Figure 4. Power Added Efficiency versus Frequency 35.5 34 890 Pin = 12 dBm VD1 = VD2 = 4.2 V VSS = –4.0 V 885 890 895 900 905 f, FREQUENCY (MHz) 25°C 25 20 15 Pin = 12 dBm VSS = –4.0 V f = 900 MHz 10 5 910 Figure 7. Output Power versus Frequency MRFIC0917 4 TA = 85°C 30 915 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VD1, VD2, DRAIN VOLTAGE (V) Figure 8. Output Power versus Drain Voltage MOTOROLA RF DEVICE DATA 5 TYPICAL CHARACTERISTICS 36 –40°C 50 34 Pout , OUTPUT POWER (dBm) PAE, POWER ADDED EFFICIENCY (%) 55 45 85°C 40 35 30 TA = 25°C 25 20 Pin = 12 dBm VSS = –4.0 V f = 900 MHz 15 0.5 1 3 2 3.5 1.5 2.5 VD1, VD2, DRAIN VOLTAGE (V) 4 30 28 85°C 25°C 26 24 VD1 = VD2 = 3.6 V VSS = –4.0 V f = 900 MHz 22 20 –7 10 0 TA = –40°C 32 4.5 5 Figure 9. Power Added Efficiency versus Drain Voltage –5 –3 –1 1 3 5 7 Pin, INPUT POWER (dBm) 9 11 Figure 10. Output Power versus Input Power PAE, POWER ADDED EFFICIENCY (%) 60 50 –40°C 40 85°C 30 20 TA = 25°C VD1 = VD2 = 3.6 V VSS = –4.0 V f = 900 MHz 10 0 –8 –6 –4 –2 0 2 4 6 8 Pin, INPUT POWER (dBm) 10 12 14 Figure 11. Power Added Efficiency versus Input Power f ZOL* (Ω) Zin (Ω) MHz R jX R jX 880 20.2 8.63 2.49 7.04 885 20.5 8.57 2.48 6.98 890 20.8 8.5 2.45 6.91 895 21.2 8.42 2.43 6.81 900 21.5 8.36 2.42 6.74 905 21.9 8.3 2.4 6.64 910 22.3 8.23 2.37 6.58 915 22.6 8.17 2.36 6.51 Table 1. Device Impedances Derived from Circuit Characterization MOTOROLA RF DEVICE DATA MRFIC0917 5 13 Table 2. Scattering Parameters (VDD = 3 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 Ω System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 500 0.738 –86 12.71 –82 0.002 147 0.891 173 600 0.786 –83 5.05 –102 0.003 132 0.874 170 700 0.799 –113 11.56 –79 0.004 153 0.858 173 800 0.681 –115 8.44 –113 0.005 138 0.885 171 820 0.671 –116 7.93 –115 0.005 138 0.887 170 840 0.669 –117 7.54 –117 0.005 133 0.885 170 860 0.668 –118 7.30 –119 0.005 130 0.888 170 880 0.673 –119 7.18 –121 0.006 129 0.885 169 900 0.672 –120 7.07 –123 0.006 131 0.883 169 920 0.672 –122 6.90 –127 0.006 130 0.883 168 940 0.672 –123 6.65 –130 0.006 130 0.882 168 960 0.673 –124 6.37 –133 0.007 127 0.881 168 980 0.682 –126 6.10 –136 0.007 130 0.88 168 1000 0.679 –127 5.83 –138 0.006 123 0.881 167 1100 0.685 –134 4.81 –145 0.007 120 0.874 166 1200 0.705 –143 4.67 –152 0.008 121 0.868 165 1300 0.703 –152 4.06 –165 0.010 113 0.855 164 1400 0.704 –161 3.69 –175 0.011 106 0.838 163 1500 0.646 –174 3.19 160 0.011 86 0.826 166 MRFIC0917 6 MOTOROLA RF DEVICE DATA Table 3. Scattering Parameters (VDD = 3.6 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 Ω System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 500 0.737 –85 14.12 –84 0.002 135 0.887 174 600 0.792 –83 5.47 –103 0.002 130 0.866 170 700 0.799 –112 12.69 –80 0.004 157 0.853 174 800 0.687 –115 9.13 –115 0.005 131 0.881 171 820 0.681 –116 8.56 –117 0.005 131 0.882 171 840 0.680 –117 8.12 –119 0.005 132 0.882 170 860 0.678 –118 7.83 –121 0.005 131 0.883 170 880 0.680 –119 7.69 –123 0.005 129 0.882 170 900 0.681 –120 7.53 –125 0.006 133 0.882 169 920 0.680 –122 7.36 –129 0.006 127 0.879 169 940 0.681 –123 7.09 –132 0.006 130 0.878 169 960 0.681 –125 6.77 –135 0.006 121 0.878 168 980 0.688 –126 6.47 –137 0.006 123 0.878 168 1000 0.684 –128 6.18 –139 0.006 123 0.876 168 1100 0.690 –135 5.08 –147 0.007 116 0.870 166 1200 0.707 –143 4.90 –153 0.007 123 0.862 165 1300 0.701 –153 4.24 –167 0.009 112 0.852 164 1400 0.704 –162 3.83 –176 0.010 107 0.833 164 1500 0.643 –174 3.26 160 0.010 84 0.828 167 MOTOROLA RF DEVICE DATA MRFIC0917 7 Table 4. Scattering Parameters (VDD = 4.2 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 Ω System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 500 0.740 –85 15.59 –86 0.002 139 0.880 174 600 0.798 –84 5.71 –103 0.002 135 0.859 171 700 0.802 –112 13.82 –81 0.004 154 0.851 174 800 0.694 –116 9.82 –116 0.005 137 0.879 171 820 0.688 –116 9.20 –119 0.005 132 0.883 171 840 0.684 –117 8.70 –121 0.004 137 0.877 171 860 0.688 –119 8.37 –123 0.005 133 0.879 170 880 0.684 –120 8.20 –125 0.005 129 0.879 170 900 0.686 –121 8.03 –127 0.005 127 0.879 169 920 0.685 –123 7.82 –131 0.006 130 0.879 169 940 0.682 –124 7.53 –134 0.005 127 0.875 169 960 0.687 –126 7.18 –137 0.006 126 0.874 169 980 0.694 –127 6.84 –139 0.006 124 0.875 168 1000 0.686 –129 6.53 –141 0.006 123 0.873 168 1100 0.692 –137 5.34 –149 0.006 116 0.866 167 1200 0.704 –145 5.12 –155 0.007 122 0.861 165 1300 0.698 –154 4.41 –168 0.009 113 0.847 165 1400 0.695 –163 3.94 –178 0.010 104 0.835 164 1500 0.638 –175 3.34 159 0.009 84 0.828 167 MRFIC0917 8 MOTOROLA RF DEVICE DATA APPLICATIONS INFORMATION Design Philosophy The MRFIC0917 is a two–stage Integrated Power Amplifier designed for use in cellular phones, especially for those used in GSM Class IV, 3.6 V operation. Due to the fact that the input, output and some of the interstage matching is accomplished off chip, the device can be tuned to operate anywhere within the 800 to 1000 MHz frequency range. This capability makes the MRFIC0917 suitable for portable cellular applications such as: S 3.6 V 900 MHz DAMPS S 3.6 V 900 MHz PDC RF Circuit Considerations The MRFIC0917 can be tuned by changing the values and/ or positions of the appropriate external components. Refer to Figure 2, a typical GSM Class IV applications circuit. The input match is a shunt–C, series–L, low–pass structure and can be retuned as desired with the only limitation being the on–chip 12 pF blocking capacitor. For saturated applications such as GSM and analog cellular, the input match should be optimized at the rated RF input power. Interstage matching can be optimized by changing the value and/or position of the decoupling capacitor on the VD1 supply line. Moving the capacitor closer to the device or reducing the value increases the frequency of resonance with the inductance of the device’s wirebonds and leadframe pin. Output matching is accomplished with a two–stage low–pass network as a compromise between bandwidth and harmonic rejection. Implementation is through chip capacitors mounted along a 30 or 50Ω microstrip transmission line. Values and positions are chosen to present a 2Ω loadline to the device while conjugating the device output parasitics. The network must also properly terminate the second and third harmonics to optimize efficiency and reduce harmonic output. When low–Q commercial chip capacitors are used for the shunt capacitors, loss can be reduced by mounting two capacitors in parallel to achieve the total value needed. Loss in circuit traces must also be considered. The output transmission line and the bias supply lines should be at least 0.6 mm in width to accommodate the peak circulating currents which can be as high as 2 amperes. The bias supply line which supplies the output should include an RF choke of at least 8 nH, surface mount solenoid inductors or equivalent length of microstrip lines. Discrete inductors will usually give better efficiency and conserve board space. The DC blocking capacitor required at the output of the device is best mounted at the 50Ω impedance point in the circuit where the RF current is at a minimum and the capacitor loss will have less effect. Power Control Using the MC33169 The MC33169 is a dedicated GaAs power amplifier support IC which provides the –4 V required for VSS, an N–MOS drain switch interface and driver and power supply sequencing. The MC33169 can be used for power control in applications where the amplifier is operated in saturation since the output power in non–linear operation is proportional to VD2. This provides a very linear and repeatable power control transfer function. MOTOROLA RF DEVICE DATA This technique can be used open–loop to achieve 20–25 dB dynamic range over process and temperature variation. With careful design and selection of calibration points, this technique can be used for GSM phase II control where 29 dB dynamic range is required, eliminating the need for the complexity and cost of closed–loop control. The transmit waveform ramping function required for systems such as GSM can be implemented with a simple Sallen and Key filter on the MC33169 control loop. The amplifier is then ramped on as the VRAMP pin is taken from 0 V to 3 V. To implement the different power steps required for GSM, the VRAMP pin is ramped between 0 V and the appropriate voltage between 0 V and 3 V for the desired output power. For closed–loop configurations using the MC33169, MMSF4N01HD N–MOS switch and the MRFIC0917 provide a typical 1 MHz 3 dB loop bandwidth. The STANDBY pin must be enabled (3 V) at least 800 µs before the VRAMP pin goes high and disabled (0 V) at least 20 µs before the VRAMP pin goes low. This STANDBY function allows for the enabling of the MC33169 one burst before the active burst thus reducing power consumption. Biasing Considerations Gate bias is supplied to each stage separately through resistive division of the VSS voltage. The top of each divider is brought out through pins 12 and 13 (VG2 and VG1 respectively) allowing gate biasing through use of external resistors or positive voltages. This allows setting the quiescent current of each stage separately. For applications where the amplifier is operated close to saturation, such as GSM and analog cellular, the gate bias can be set with resistors. Variations in process and temperature will not affect amplifier performance significantly in these applications. The values shown in the Figure 1 will set quiescent currents of 100 to 200 mA for the first stage and 600 to 1200 mA for the second stage. For linear modes of operation, the quiescent current must be more carefully controlled. For these applications, the VG pins can be referenced to some tunable voltage which is set at the time of radio manufacturing. Less than 1.0 mA is required in the divider network so a DAC can be used as the voltage source. Typical settings for 3.6 V linear operation are 150 mA ±5% for the first stage, and 750 mA ±5% for the second stage. Conclusion The MRFIC0917 offers the flexibility in matching circuitry and gate biasing required for portable cellular applications. Together with the MC33169 support IC, the device offers an efficient system solution for TDMA applications such as GSM where saturated amplifier operation is used. Evaluation Boards Evaluation boards are available for RF Monolithic Integrated Circuits. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office. MRFIC0917 9 PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 D e/2 D1 8 9 E1 8X bbb M B BOTTOM VIEW E C B ÇÇÇ ÉÉ ÇÇÇ ÉÉ ÇÇÇ S b1 DATUM PLANE H c A A2 c1 b aaa DETAIL Y C SEATING PLANE M C A SECT W–W S DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q L1 ccc C NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS –A– AND –B– TO BE DETERMINED AT DATUM PLANE –H–. q aaa bbb ccc W MILLIMETERS MIN MAX 2.000 2.350 0.025 0.152 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC ––– 0.600 0_ 7_ 0.200 0.200 0.100 GAUGE PLANE W L A1 1.000 0.039 DETAIL Y CASE 978–02 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ MRFIC0917 10 ◊ MRFIC0917/D MOTOROLA RF DEVICE DATA