DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V (Min) 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature LOGOXYY 150 Degrees C 150 Degrees C 0.175 - 0.185 (4.450 - 4.700) 2N 6076 SEATING POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C PLANE 625 mW 0.500 (12.70) VOLTAGES & CURRENT VCEO Collector to Emitter VCBO Collector to Base VEBO Emitter to Base IC Collector Current 25 V 25 V 5V 500 mA MIN 0.016 - 0.021 (0.410- 0.533) 0.045 - 0.055 (1.143- 1.397) 0.095 - 0.105 (2.413 - 2.667) ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS BVCBO Collector to Base Voltage 25 V IC = 100 uA BVCEO Collector to Emitter Voltage 25 V IC = 10 mA BVEBO Emitter to Base Voltage 5 V IE = 10 uA ICBO Collector Cutoff Current 100 nA VCB = 25 V 10 uA VCB = 25 V , T=+100°C ICES Collector Cutoff Current 100 nA VCE = 25 V IEBO Emitter Cutoff Current 100 uA VEB = 3.0 V hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage 0.25 V IC = 10mA IB = 1.0mA VBE(sat) Base-Emitter Saturation Voltage 0.8 V IC = 10mA IB = 1.0mA VBE(on) Base -Emitter On Voltage 1.2 V VCE = 10 V 1998 Fairchild Semiconductor Corporation 100 0.5 500 VCE = 10 V IC = 10 mA IC = 10mA 2n6076.ppt6894 revA DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR ELECTRICAL CHARACTERISTICS Con’t (25 Degrees C Ambient Temperature unless otherwise stated) SYM CHARACTERISTICS MIN MAX UNITS Ccb Output Capacitance 1 13 hfe Small Signal Current Gain 100 750 pF TEST CONDITIONS VCB = 10 V, f = 1 MHz VCE = 10 V, IC=10 mA, f =1KHz NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150 degrees C. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G