KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCES VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 10 IC V Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES Parameter Collector-Emitter Breakdown Voltage Test Condition IC=100µA, IB=0 Min. 30 Max. Units V ICBO Collector Cut-off Current VCB=30V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=10V, IC=0 100 nA hFE * DC Current Gain : KSP13 : KSP14 : KSP13 : KSP14 VCE=5V, IC=10mA VCE=5V, IC=100mA 5K 10K 10K 20K VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=0.1mA 1.5 V VBE (on) Base-Emitter On Voltage VCE=5V, IC=100mA 2.0 V fT Current Gain Bandwidth Product VCE=5V, IC=10mA f=100MHz 125 MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP13/14 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1M hFE, DC CURRENT GAIN VCE = 5V 100k 10k 1k 1 10 100 1000 10 IC = 1000 IB V BE(sat) 1 V CE(sat) 0.1 10 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VCE = 5V IC[mA], COLLECTOR CURRENT 100 10 0.4 0.8 1.2 1.6 2.0 2.4 VBE [V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 1. DC current Gain 1 0.0 100 1000 VCE = 5V 100 10 1 10 100 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A2, September 2002 KSP13/14 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1