KSP25/26/27 KSP25/26/27 Darlington Transistor • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Power Dissipation: PC (max) =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Value Units 40 50 60 V V V Collector-Emitter Voltage : KSP25 : KSP26 : KSP27 VEBO Emitter-Base Voltage 10 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES BVCBO ICBO Parameter Collector-Emitter Breakdown Voltage : KSP25 : KSP26 : KSP27 Test Condition IC=100µA, IE=0 Collector-Base Breakdown Voltage : KSP25 : KSP26 : KSP27 IC=100µA, IE=0 Min. Max. Units 40 50 60 V V V 40 50 60 V V V Collector Cut-off Current : KSP25 : KSP26 : KSP27 VCE=30V, IE=0 VCE=40V, IE=0 VCE=50V, IE=0 IEBO Emitter Cut-off Current VEB=10V, IB=0 hFE * DC Current Gain VCE=5V, IC=10mA VCE=5V, IC=100mA VCE (sat) * Collector-Emitter Saturation Voltage IC=100mA, IB=0.1mA VBE (on) * Base-Emitter On Voltage VCE=5V, IC=100mA 100 100 100 nA nA nA 100 nA 10K 10K 1.5 V 2 V * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP25/26/27 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000k hFE, DC CURRENT GAIN VCE = 5V 100k 10k 1k 1 10 100 1000 10 IC = 1000 IB V BE(sat) 1 V CE(sat) 0.1 10 IC[mA], COLLECTOR CURRENT 400 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10k 200 100 IC[A], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT VCE = 5V 10 100µ S 1k 1mS 1S O T C = 25 C 100 O T a = 25 C 1 0.0 10 0.4 0.8 1.2 1.6 2.0 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 2.4 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 4. Safe Operating Area Rev. A2, September 2002 KSP25/26/27 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1