MOTOROLA Order this document by MCM6709B/D SEMICONDUCTOR TECHNICAL DATA MCM6709B Product Preview 64K x 4 Bit Static RAM The MCM6709B is a 262,144 bit static random access memory organized as 65,536 words of 4 bit. Static design eliminates the need for external clocks or timing strobes. Output enable (G), a special control feature of the MCM6709B, provides increased system flexibility and eliminates bus contention problems. The MCM6709B is available in a 300 mil, 28 lead plastic surface–mount SOJ package. • • • • • J PACKAGE 300 MIL SOJ CASE 810B–03 Single 5 V ± 10% Power Supply Fully Static — No Clock or Timing Strobes Necessary All Inputs and Outputs are TTL Compatible Three State Outputs Fast Access Times: MCM6709B–8 = 8 ns MCM6709B–10 = 10 ns MCM6709B–12 = 12 ns PIN ASSIGNMENT NC 1 28 A 2 27 VCC A A 3 26 A A 4 25 A A 5 24 A A 6 23 A A 7 22 A A 8 21 NC A A 9 20 NC A A 10 19 DQ A 11 18 DQ E 12 17 DQ G 13 16 DQ VSS 14 15 W BLOCK DIAGRAM A A ROW DECODER A MEMORY MATRIX 256 ROWS x 256 x 4 COLUMNS •• • A A A DQ •• • •• • COLUMN I/O •• • INPUT DATA CONTROL COLUMN DECODER DQ A E A A A A A A A PIN NAMES A . . . . . . . . . . . . . . . . . . Address Inputs W . . . . . . . . . . . . . . . . . . . Write Enable G . . . . . . . . . . . . . . . . . Output Enable E . . . . . . . . . . . . . . . . . . . . Chip Enable DQ . . . . . . . . . . . . . Data Input/Output VCC . . . . . . . . . . + 5 V Power Supply VSS . . . . . . . . . . . . . . . . . . . . . Ground NC . . . . . . . . . . . . . . . . No Connection W G This document contains informantion on a new product under development. Motorola reserves the right to change or discontinue this product without notice. REV 1 10/9/96 Motorola, Inc. 1996 MOTOROLA FAST SRAM MCM6709B 1 TRUTH TABLE (X = Don’t Care) E G W Mode Output Cycle H X X Not Selected High–Z — L H H Read High–Z — L L H Read Dout Read Cycle L X L Write Din Write Cycle ABSOLUTE MAXIMUM RATINGS (See Note) Symbol Value Unit VCC – 0.5 to + 7.0 V Vin, Vout – 0.5 to VCC + 0.5 V Output Current (per I/O) Iout ± 30 mA Power Dissipation PD 2.0 W Temperature Under Bias Tbias – 10 to + 85 °C Operating Temperature TA 0 to + 70 °C Rating Power Supply Voltage Voltage Relative to VSS for Any Pin Except VCC Storage Temperature — Plastic Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high–impedance circuit. This BiCMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) Parameter VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 — VCC + 0.3* V — 0.8 V Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) — ± 1.0 µA Output Leakage Current (E = VIH, Vout = 0 to VCC) Ilkg(O) — ± 1.0 µA Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V Output Low Voltage (IOL = 8.0 mA) VOL — 0.4 V Input Low Voltage VIL – 0.5** * VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA. ** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA. DC CHARACTERISTICS Parameter POWER SUPPLY CURRENTS Parameter Symbol MCM6709B–8 MCM6709B–10 MCM6709B–12 Unit Notes AC Active Supply Current (Iout = 0 mA, VCC = max, f = fmax) ICCA 185 175 165 mA 1, 2, 3 AC Standby Current (E = VIH, VCC = max, f = fmax) ISB1 120 110 105 mA 1, 2, 3 CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V, Vin ≤ VSS, or ≥ VCC – 0.2 V) ISB2 20 20 20 mA NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V). 2. All addresses transition simultaneously low (LSB) and then high (MSB). 3. Data states are all zero. MCM6709B 2 MOTOROLA FAST SRAM CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested) Symbol Max Unit Address Input Capacitance Cin 5 pF Control Pin Input Capacitance (E, G, W) Cin 5 pF Input/Output Capacitance CI/O 6 pF Parameter AC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted) Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ns Output Timing Measurement Reference Level . . . . . . . . . . . . . 1.5 V Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1a READ CYCLES 1 AND 2 (See Notes 1 and 2) MCM6709B–8 Parameter MCM6709B–10 MCM6709B–12 Symbol Min Max Min Max Min Max Unit Notes Read Cycle Time tAVAV 8 — 10 — 12 — ns 3 Address Access Time tAVQV — 8 — 10 — 12 ns Chip Enable Access Time tELQV — 8 — 10 — 12 ns Output Enable Access Time tGLQV — 4 — 5 — 6 ns Output Hold from Address Change tAXQX 3 — 3 — 3 — ns Chip Enable Low to Output Active tELQX 1 — 1 — 1 — ns 4, 5, 6 Output Enable Low to Output Active tGLQX 0 — 0 — 0 — ns 4, 5, 6 Chip Enable High to Output High–Z tEHQZ — 4.5 — 5 — 6 ns 4, 5, 6 Output Enable High to Output High–Z tGHQZ — 4 — 5 — 6 ns 4, 5, 6 NOTES: 1. W is high for read cycle. 2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles. 3. All read cycle timings are referenced from the last valid address to the first transitioning address. 4. At any given voltage and temperature, tEHQZ max is less than tELQX min, and tGHQZ max is less than tGLQX min, both for a given device and from device to device. 5. Transition is measured 200 mV from steady–state voltage with load of Figure 1b. 6. This parameter is sampled and not 100% tested. TIMING LIMITS +5 V 480 Ω OUTPUT Z0 = 50 Ω RL = 50 Ω OUTPUT 255 Ω 5 pF VL = 1.5 V (a) (b) The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the system must supply at least that much time. On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time. Figure 1. AC Test Loads MOTOROLA FAST SRAM MCM6709B 3 READ CYCLE 1 (See Note) tAVAV A (ADDRESS) tAXQX Q (DATA OUT) PREVIOUS DATA VALID DATA VALID tAVQV NOTE: Device is continuously selected (E = VIL, G = VIL). READ CYCLE 2 (See Note) tAVAV A (ADDRESS) tELQV E (CHIP ENABLE) tEHQZ tELQX G (OUTPUT ENABLE) tGLQX tGLQV tGHQZ DATA VALID Q (DATA OUT) tAVQV NOTE: Addresses valid prior to or coincident with E going low. MCM6709B 4 MOTOROLA FAST SRAM WRITE CYCLE 1 (W Controlled, See Notes 1 and 2) MCM6709B–8 Parameter MCM6709B–10 MCM6709B–12 Symbol Min Max Min Max Min Max Unit Notes Write Cycle Time tAVAV 8 — 10 — 12 — ns 3 Address Setup Time tAVWL 0 — 0 — 0 — ns Address Valid to End of Write tAVWH 8 — 9 — 10 — ns Write Pulse Width tWLWH tWLEH 8 — 9 — 10 — ns Data Valid to End of Write tDVWH 4 — 5 — 6 — ns Data Hold Time tWHDX 0 — 0 — 0 — ns Write Low to Data High–Z tWLQZ — 4 — 5 — 6 ns 4, 5, 6 Write High to Output Active tWHQX 3 — 3 — 3 — ns 4, 5, 6 Write Recovery Time tWHAX 0 — 0 — 0 — ns NOTES: 1. A write occurs during the overlap of E low and W low. 2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles. 3. All write cycle timing is referenced from the last valid address to the first transitioning address. 4. Transition is measured 200 mV from steady state voltage with load of Figure 1b. 5. This parameter is sampled and not 100% tested. 6. At any given voltage and temperature, tWLQZ max is less than tWHQX min both for a given device and from device to device. WRITE CYCLE 1 tAVAV A (ADDRESS) tAVWH tWHAX E (CHIP ENABLE) tWLWH tWLEH W (WRITE ENABLE) tAVWL tDVWH DATA VALID D (DATA IN) tWLQZ Q (DATA OUT) MOTOROLA FAST SRAM tWHDX HIGH–Z tWHQX HIGH–Z MCM6709B 5 WRITE CYCLE 2 (E Controlled, See Notes 1 and 2) MCM6709B–8 Parameter MCM6709B–10 MCM6709B–12 Symbol Min Max Min Max Min Max Unit Notes Write Cycle Time tAVAV 8 — 10 — 12 — ns 3 Address Setup Time tAVEL 0 — 0 — 0 — ns Address Valid to End of Write tAVEH 8 — 9 — 10 — ns Chip Enable to End of Write tELEH, tELWH 7 — 8 — 9 — ns Data Valid to End of Write tDVEH 4 — 5 — 6 — ns Data Hold Time tEHDX 0 — 0 — 0 — ns 4, 5 Write Recovery Time tEHAX 0 — 0 — 0 — ns NOTES: 1. A write occurs during the overlap of E low and W low. 2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles. 3. All write cycle timing is referenced from the last valid address to the first transitioning address. 4. If E goes low coincident with or after W goes low, the output will remain in a high impedance condition. 5. If E goes high coincident with or before W goes high, the output will remain in a high impedance condition. WRITE CYCLE 2 tAVAV A (ADDRESS) tAVEH tELEH E (CHIP ENABLE) tAVEL tELWH tEHAX W (WRITE ENABLE) tDVEH DATA VALID D (DATA IN) tEHDX HIGH–Z Q (DATA OUT) ORDERING INFORMATION (Order by Full Part Number) MCM 6709B X XX X Motorola Memory Prefix Shipping Method (R = Tape and Reel, Blank = Rails) Part Number Speed (8 = 8 ns, 10 = 10 ns, 12 = 12 ns) Package (J = 300 mil SOJ) Full Part Numbers — MCM6709BJ8 MCM6709BJ10 MCM6709BJ12 MCM6709B 6 MCM6709BJ8R MCM6709BJ10R MCM6709BJ12R MOTOROLA FAST SRAM PACKAGE DIMENSIONS J PACKAGE 300 MIL SOJ CASE 810B-03 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. DIMENSION A & B DO NOT INCLUDE MOLD PROTRUSION. MOLD PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 3. CONTROLLING DIMENSION: INCH. 4. DIM R TO BE DETERMINED AT DATUM -T-. 5. 810B-01 AND -02 OBSOLETE, NEW STANDARD 810B-03. F DETAIL Z 28 15 N 1 D 24 PL 14 0.18 (0.007) -A- M T A 0.18 (0.007) H BRK S S T B S P -B- L G M M E C 0.10 (0.004) K DETAIL Z -T- SEATING PLANE S RAD R 0.25 (0.010) S T B S DIM A B C D E F G H K L M N P R S MILLIMETERS MIN MAX 18.29 18.54 7.74 7.50 3.75 3.26 0.50 0.39 2.48 2.24 0.81 0.67 1.27 BSC 0.50 — 1.14 0.89 0.64 BSC 10° 0° 1.14 0.76 8.64 8.38 6.86 6.60 1.01 0.77 INCHES MIN MAX 0.720 0.730 0.295 0.305 0.128 0.148 0.015 0.020 0.088 0.098 0.026 0.032 0.050 BSC 0.020 — 0.035 0.045 0.025 BSC 10° 0° 0.030 0.045 0.330 0.340 0.260 0.270 0.030 0.040 Motorola reserves the right to make changes without further notice to any products herein. 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