Order this document by MCR8S/D SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices SCRs 8 AMPERES RMS 400 thru 800 VOLTS Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 8 Amperes RMS A • High Surge Current Capability — 90 Amperes • Industry Standard TO–220AB Package for Ease of Design • Glass Passivated Junctions for Reliability and Uniformity • Low Trigger Currents, 200µA Maximum for Direct Driving from Integrated Circuits K A G CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 110°C; RGK = 1.0 KΩ) Symbol Value VDRM VRRM MCR8SD MCR8SM MCR8SN On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Unit Volts 400 600 800 IT(RMS) 8 A ITSM 90 A I2t 34 A2sec PGM 5.0 Watts PG(AV) 0.5 Watts IGM 2.0 A TJ – 40 to +110 °C Tstg – 40 to +150 °C RθJC RθJA 2.2 62.5 °C/W THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient TL 260 °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C; RGK = 1.0 KΩ unless otherwise noted) Symbol Min Typ Max Unit IDRM IRRM — — — — 10 500 µA Peak On-State Voltage (ITM = 16 A) (2) VTM — 1.4 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) (3) IGT 5.0 20 200 µA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.65 1.0 Volts IH 0.5 1.0 6.0 mA (dv/dt) 2.0 10 — V/µs Characteristic OFF CHARACTERISTICS Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) (1) TJ = 25°C TJ = 110°C ON CHARACTERISTICS Hold Current (Anode Voltage =12 V) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = 67% of Rated VDRM, Exponential Waveform, TJ = 110°C) (1) Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. (2) Pulse test: P.W. ≤ 2ms, Duty Cycle ≤ 2%. (3) Does not include RGK current. PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V STYLE 3: PIN 1. 2. 3. 4. J G D CASE 221A–06 (TO-220AB) N CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 2 ◊ Motorola Thyristor Device Data *MCR8S/D* MCR8S/D