Order this document by S2800/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. SCRs 10 AMPERES RMS 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts G A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 100°C, Gate Open) F A B S2800 D M N VRRM VDRM Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1) VRSM VDSM S2800 RMS Forward Current (All Conduction Angles) Unit Volts 50 100 200 400 600 800 Volts 75 125 250 500 700 900 F A B D M N IT(RMS) 10 Amps ITSM I2t 100 Amps 40 A2s TC = 75°C Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (t Value p 10 µs) Forward Average Gate Power Operating Junction Temperature Range Storage Temperature Range PGM 16 Watts PG(AV) 0.5 Watt TJ –40 to +100 °C Tstg –40 to +150 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Min Typ Max Unit — — — — 10 2 µA mA VT — 1.7 2 Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) IGT — 8 15 mA Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) VGT — 0.9 1.5 Volts Holding Current (Gate Open, VD = 12 Vdc, IT = 150 mA) IH — 10 20 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 2 A, IGR = 80 mA) tgt — 1.6 — µs Circuit Commutated Turn-Off Time (VD = VDRM, ITM = 2 A, Pulse Width = 50 µs, dv/dt = 200 V/µs, di/dt = 10 A/µs, TC = 75°C) tq — 25 — µs dv/dt — 100 — V/µs Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Instantaneous On-State Voltage, (ITM = 30 A Peak, Pulse Width Symbol IDRM, IRRM TC = 25°C TC = 100°C p 1 ms, Duty Cycle p 2%) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Rise, TC = 100°C) FIGURE 2 – POWER DISSIPATION 2 P(AV), AVERAGE POWER DISSIPATION (WATTS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) FIGURE 1 – CURRENT DERATING HALF-WAVE CURRENT WAVEFORM: A SINUSOIDAL LOAD: RESISTIVE OR INDUCTIVE 100 IT(RMS) 90 IT(AV) 80 70 0 2 4 6 8 IT(AV), IT(RMS), ON-STATE CURRENT (AMPS) 10 12 MAXIMUM 10 MAXIMUM 8 6 HALF-WAVE CURRENT WAVEFORM: A SINUSOIDAL LOAD: RESISTIVE OR INDUCTIVE 4 2 RMS CURRENT AV CURRENT 0 0 2 4 6 8 10 IT(AV), IT(RMS), MAXIMUM ON-STATE CURRENT (AMP) Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T SEATING PLANE C S 4 Q STYLE 3: PIN 1. 2. 3. 4. A 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. U H K Z R L V J G D N CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *S2800/D* S2800/D