Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line Freescale Semiconductor, Inc... N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 2 x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 52 Watts Avg. Power Gain — 13 dB Efficiency — 24% IM3 — –36 dBc ACPR — –39 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz, 180 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 2170 MHz, 52 W AVG., 2 x W–CDMA, 28 V LATERAL N–CHANNEL RF POWER MOSFET CASE 375D–04, STYLE 1 NI–1230 MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 500 2.86 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C CW 180 Watts Symbol Max Unit CW Operation THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 55°C, 180 W CW Case Temperature 45°C, 52 W CW RθJC 0.35 0.40 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF5P21240R6 1 Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C6 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc) VGS(Q) 3 3.8 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) — 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.5 — S Crss — 2.75 — pF Characteristic Freescale Semiconductor, Inc... OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2–Carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.5 dB @ 0.01% Probability on CCDF. Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 22.5 24 — % IM3 — –36 –34 dBc ACPR — –39 –37 dBc IRL — –12 –9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push–pull configuration. MRF5P21240R6 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Z1 Z2, Z23 Z3, Z22 Z4, Z21 Z5, Z6 Z7, Z8 Z9, Z10 0.898″ x 0.080″ Microstrip 0.775″ x 0.136″ Microstrip 0.060″ x 0.080″ Microstrip 1.867″ x 0.080″ Microstrip 0.443″ x 0.080″ Microstrip 0.100″ x 0.080″ Microstrip 0.490″ x 0.540″ Microstrip Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z24 PCB 1.270″ x 0.058″ Microstrip 0.250″ x 0.500″ Microstrip 0.850″ x 0.150″ Microstrip 0.535″ x 0.390″ Microstrip 0.218″ x 0.080″ Microstrip 0.825″ x 0.080″ Microstrip Arlon GX–0300–55–22, 0.030″, εr = 2.55 Figure 1. MRF5P21240R6 Test Circuit Schematic Table 1. MRF5P21240R6 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1, B2 Short Ferrite Beads 2743019447 Fair Rite C1, C2, C3, C4 18 pF Chip Capacitors 100B180JCA500X ATC C5, C6, C7, C8 6.8 pF Chip Capacitors 100B6R8JCA500X ATC C9, C10, C11, C12 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C13, C14 1000 pF Chip Capacitors 100B102JCA500X ATC C15, C16 4.7 µF Tantalum Capacitors T491C475M050 Kemet C17, C18 10 µF Electrolytic Capacitors EEV–HB1H100P Panasonic C19, C20, C21, C22 C23, C24, C25, C26 22 µF Tantalum Capacitors T491X226K035AS4394 Kemet C27, C28 100 µF Electrolytic Capacitors 517D107M050BB6A Sprague R1, R2 1.0 kW, 1/8 W Chip Resistors R3, R4 10 W, 1/8 W Chip Resistors MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5P21240R6 3 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Figure 2. MRF5P21240R6 Test Circuit Component Layout MRF5P21240R6 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS #$ &. */- #$ η 0 /1& 234 0 . *5-& ( 0 6 !78898 .!& +, 78898 :#719;5 +, <7;;= 7;/>9/4< 7?@5 0 / A B 82C7C9=94D * - " ! ! ! ! ! ! ! ! ! ! ! ! "& "::*/- η& )*B- */1-&*/1- Figure 3. 2–Carrier W–CDMA Broadband Performance ! &+ ":*/1- ( 0 6 #$ &. */- 6 6 6 6 0 /1& % 0 +,& % 0 +, >2!2; 7$386;4& +, 2; :#719;5 ! ( 0 6 ! 6 ! 6 ! ! 6 6 ! 234& . *.:- Figure 4. Two–Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power ! 8/ 8/8 ! /7= 234 &. */6- / 0 /6 * .- ! ! 4< 8/8 1437= / 0 /6 * .- ! 4< 8/8 ! ! 0 /1& % 0 +,& % 0 +, >2!2; 7$386;4& +, 2; :#719;5 234& . *.:- & ":*/1- Freescale Semiconductor, Inc... %& ( ) *+,- 0 /1& 234 0 . * -& ( 0 6 >2!2; 7$386;4$& ;48 8E3;1D 0 +, 0 /1& ( 0 6 3=$ .& µ$1*2;-& 6$1*2%%;48 8E3;1D 0 +, .! : *+,- 9;& . */6- Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5P21240R6 5 Freescale Semiconductor, Inc. η ! ! ! #$ ! ! ! ! ! ! ! ! ! A A +, . +, . ! A +, . ! ! ! ! ! +, <7;;= . ! */- ! ! 0 /1& ( 0 6 % 0 +,& % 0 +, F .!& +, 78898 :#719;5 +, <7;;= 7;/>9/4< 7?@5 0 / A B 82C7C9=94D * - */1-&*/1- ! ! ! Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power *+:F:- ! A +, . %& ( ) *+,- 234& . *.:& 5- .! ")*B- Freescale Semiconductor, Inc... η& )*B-& #$ &. */- TYPICAL CHARACTERISTICS G!! */- Figure 10. CCDF W–CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal H& H *°<9$ 7C2 587#< /9$#=7D$ 17=13=74/ 9; <238$ F 76#8 /879; 1388;4 "9% 4$4$ 74 =74/ 46#87438$ <7 1288=74/ 42 C448 4<7; ±B 2% 4< 4<284917= #8/91492; %28 647= %79=38 99/ %71428 CD %28 9; 7 #784913=78 7##=917492; Figure 11. MTBF Factor versus Junction Temperature MRF5P21240R6 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. % 0 +, =27/I % 0 +, % 0 +, $2381 2 0 Ω Freescale Semiconductor, Inc... % 0 +, 0 & ( 0 F 6& 234 0 . 5 f MHz Zsource Ω Zload Ω 2090 5.33 – j6.21 11.42 – j2.25 2110 5.44 – j5.88 10.45 – j2.16 2130 5.40 – j6.16 11.28 – j2.14 2150 5.12 – j6.06 11.38 – j2.14 2170 4.96 – j5.25 11.04 – j1.25 2190 4.98 – j4.47 10.73 – j0.40 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. ;#34 741<9;5 4>28? 91 ;/8 $4 ! ! Z source 34#34 741<9;5 4>28? Z load Figure 12. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5P21240R6 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X A CCC G 4 1 2 3 4 :J :: " : : )! "" :J + : + : : *- .) G ) " : *- : : . DIM A B C D E F G H K L M N Q R S aaa bbb ccc B D 777 111 111 Freescale Semiconductor, Inc... (FLANGE) 4X K B L 4X Q A R (LID) N (LID) F H C E PIN 5 M (INSULATOR) CCC S T SEATING PLANE (INSULATOR) CCC INCHES MIN MAX : : :)" J CASE 375D–04 ISSUE C NI–1230 MILLIMETERS MIN MAX : : : Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1–800–521–6274 or 480–768–2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852–26668334 HOME PAGE: http://motorola.com/semiconductors MRF5P21240R6 8 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MRF5P21240/D