MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 38 Watts (Avg.) Power Gain — 12.1 dB Efficiency — 22% IM3 — 37.5 dBc ACPR — - 41 dBc • Internally Input and Output Matched, for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 2170 MHz, 170 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 04, STYLE 1 NI - 1230 MAXIMUM RATINGS Rating Symbol Value Unit Drain- Source Voltage VDSS 65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 380 2.17 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.46 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M3 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF21180R6 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) 3 3.9 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.22 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 6 — S Crss — 3.6 — pF Characteristic OFF CHARACTERISTICS (1) Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Freescale Semiconductor, Inc... ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 11 12.1 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 19 22 — % IM3 — - 37.5 - 35 dBc ACPR — - 41 - 39 dBc IRL — - 12 -9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 170 W CW, IDQ = 2 x 850 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push - pull configuration. (continued) MRF21180R6 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Freescale Semiconductor, Inc... FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps — 12 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) η — 33 — % Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD — - 30 — dBc Two - Tone Input Return Loss (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL — - 12 — dB P1dB — 180 — W Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 2 x 850 mA, f = 2170 MHz) (2) Measurements made with device in push - pull configuration. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 3 Freescale Semiconductor, Inc. VGG VDD R3 + R1 B1 C8 C9 C14 C18 + + C19 C21 Z13 + C23 C15 C11 C5 Z9 RF INPUT Z3 C1 Z5 C4 Z17 RF OUTPUT DUT Z2 Z19 Z4 C2 VGG Freescale Semiconductor, Inc... Z15 Z7 R5 Z1 Z11 Z6 Z10 R4 R2 Z20 Z8 B2 Z12 Z16 C3 Z18 Z14 + C24 C16 C12 VDD C6 + C7 C10 C13 C17 + + C20 C22 Figure 1. MRF21180 Test Circuit Schematic Table 1. MRF21180 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1, B2 Short Ferrite Beads 2743019447 Fair Rite C1, C2, C3, C4 30 pF Chip Capacitors 100B300JCA500X ATC C5, C6, C7, C8 5.6 pF Chip Capacitors 100B5R6JCA500X ATC C9, C10 10 µF Tantalum Capacitors T495X106K035AS4394 Kemet C11, C12, C13, C14 1000 pF Chip Capacitors 100B102JCA500X ATC C15, C16, C17, C18 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C19, C20 1.0 µF Tantalum Capacitors T491C105M050 Kemet C21, C22, C23, C24 22 µF Tantalum Capacitors T491X226K035AS4394 Kemet N1, N2 Type N Flange Mounts 3052-1648-10 Omni Spectra R1, R2, R3, R4 10 Ω, 1/8 W Chip Resistors R5 1.0 kΩ, 1/8 W Chip Resistor Z1, Z20 Microstrip 0.790″ x 0.065″ Z2, Z19 Microstrip 0.830″ x 0.112″ Z3, Z18 Microstrip 0.145″ x 0.065″ Z4, Z17 Microstrip 1.700″ x 0.065″ Z5, Z6 Microstrip 0.340″ x 0.065″ Z7, Z8 Microstrip 0.455″ x 0.600″ Z9, Z10 Microstrip 0.980″ x 0.035″ Z11, Z12 Microstrip 0.510″ x 0.645″ Z13, Z14 Microstrip 0.770″ x 0.058″ Z15, Z16 Microstrip 0.280″ x 0.065″ WB1, WB2, WB3, WB4 Wear Blocks Board 0.030″ Glass Teflon RF-35, εr = 3.50 Taconic PCB Etched Circuit Boards MRF21180 Rev. 4 CMR MRF21180R6 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. C19 C21 C14 C15C11 R4 B1 C18 R3 C5 C8 C10 C22 C1 C2 WB4 R5 C3 WB1 Freescale Semiconductor, Inc... C4 WB3 WB2 C23 C6 B1 R1 C20 C7 C9 R2 C17 C16 C12 C13 MRF21180 Rev. 4 C24 Figure 2. MRF21180 Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 5 Freescale Semiconductor, Inc. 15 −45 Gps 10 −50 IM3 5 −55 ACPR η 0 −60 10 1 50 −35 35 −40 30 −45 25 3rd Order −50 20 5th Order −55 15 η −60 VDD = 28 Vdc, IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 7th Order −65 10 10 5 220 100 Pout, OUTPUT POWER (WATTS) PEP Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) −35 IDQ = 1300 mA −40 1500 mA −45 2100 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 1900 mA 1700 mA −50 10 220 100 24 IRL 22 20 −9 η −14 18 16 −29 −34 IM3 12 −39 Gps ACPR 10 2090 2110 2130 2150 2170 Figure 5. Intermodulation Distortion versus Output Power Figure 6. 2 - Carrier W - CDMA Broadband Performance 48 −44 2190 38 −25 η Gps 37 40 11.5 32 11 24 10.5 16 VDD = 28 Vdc IDQ = 1700 mA f = 2140 MHz η 9.5 MRF21180R6 6 −24 14 f, FREQUENCY (MHz) 1 −19 VDD = 28 Vdc, Pout = 38 W (Avg.) IDQ = 1700 mA f1 = f − 5 MHz, f2 = f + 5 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) Pout, OUTPUT POWER (WATTS) PEP 12.5 10 40 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA −30 12 −30 10 100 −26 IMD 36 −27 35 −28 34 −29 33 8 32 0 220 31 η, DRAIN EFFICIENCY (%) −40 45 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 20 −25 −30 Pout = 170 W (PEP) IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz −31 −32 24 25 26 27 28 29 Pout, OUTPUT POWER (WATTS) VDD, DRAIN SUPPLY (V) Figure 7. CW Performance Figure 8. Two - Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com IMD, INTERMODULATION DISTORTION (dBc) −35 IM3 (dBc), ACPR (dBc) 25 IMD, INTERMODULATION DISTORTION (dBc) −30 VDD = 28 Vdc, IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 30 −25 G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS G ps , POWER GAIN (dB) 12.5 IDQ = 2100 mA 1900 mA 12.25 12 1700 mA 1500 mA 11.75 1300 mA 11.5 11.25 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz 11 100 220 Pout, OUTPUT POWER (WATTS) PEP −8 35 η 30 −13 IRL 25 20 −18 VDD = 28 Vdc Pout = 170 W (PEP) IDQ (ICQ) = 1700 mA f1 = f − 5 MHz, f2 = f + 5 MHz −23 15 −28 IMD Gps 10 2090 2110 2130 2150 −33 2190 2170 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) Figure 9. Two-Tone Power Gain versus Output Power f, FREQUENCY (MHz) Figure 10. Two-Tone Broadband Performance −25 0 −30 3rd Order −10 −35 VDD = 28 Vdc Pout = 170 W (PEP) IDQ = 1700 mA f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2 −40 f1 3.84 MHz BW f2 3.84 MHz BW −20 −30 (dB) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... 10 −ACPR @ 3.84 MHz BW +ACPR @ 3.84 MHz BW −IM3 @ 3.84 MHz BW +IM3 @ 3.84 MHz BW −40 5th Order −45 −50 7th Order −50 −60 −55 0.1 1 10 20 −70 −20 −15 −10 −5 0 5 10 15 Df, TONE SEPARATION (MHz) f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com 20 MRF21180R6 7 Freescale Semiconductor, Inc. f = 2170 MHz Zsource f = 2110 MHz f = 2170 MHz Freescale Semiconductor, Inc... Zo = 5 Ω Zload f = 2110 MHz VDD = 28 Vdc, IDQ = 2 X 850 mA, Pout = 38 W Avg. f MHz Zsource Ω Zload Ω 2110 2.45 + j2.08 2.65 + j1.52 2140 2.39 + j2.51 2.71 + j1.80 2170 2.16 + j3.14 2.64 + j2.04 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 13. Series Equivalent Input and Output Impedance MRF21180R6 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 9 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF21180R6 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21180R6 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X A bbb G 4 1 2 3 4 T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc B (FLANGE) 4X K M B L 4X Q A D aaa M T A M B M ccc M T A M B M R Freescale Semiconductor, Inc... ccc M T A M B (LID) M C E T M (INSULATOR) M T A M B S (INSULATOR) PIN 5 bbb F H N (LID) SEATING PLANE bbb M T A M B M STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375D - 04 ISSUE C NI - 1230 M INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA / EUROPE / LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21180R6 12 ◊ MOTOROLA RF DEVICE MRF21180/D DATA For More Information On This Product, Go to: www.freescale.com