MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 26 Watts Power Gain — 16 dB Efficiency — 26% Adjacent Channel Power — 750 kHz: - 45 dBc @ 30 kHz BW 1.98 MHz: - 60 dBc @ 30 kHz BW MRF9120R3 MRF9120LR3 880 MHz, 120 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 375B - 04, STYLE 1 NI - 860 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.45 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M1 (Minimum) (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rev. 7 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For ForMore MoreInformation InformationOn OnThis ThisProduct, Product, Go Goto: to:www.freescale.com www.freescale.com MRF9120R3 MRF9120LR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) — 3.8 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) — 0.17 0.4 Vdc gfs — 5.3 — S Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 50 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF OFF CHARACTERISTICS (1) Freescale Semiconductor, Inc. ON CHARACTERISTICS (1) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (1) (1) Each side of device measured separately. (continued) MRF9120R3 MRF9120LR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 15 16.5 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) η 36 39 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL — - 16 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Gps — 16.5 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) η — 40.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) IMD — - 30 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) IRL — - 13 — dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) P1dB — 120 — W Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Gps — 16 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) η — 51 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ Freescale Semiconductor, Inc. FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) No Degradation In Output Power (2) Device measured in push - pull configuration. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 3 Freescale Semiconductor, Inc. B6 B4 B3 C21 VGG + C10 C30 + C25 C26 + VDD C27 L1 C11 Balun 1 + R1 C8 Z16 Z18 Z20 Z22 C19 Z24 RF INPUT Z2 Z1 Z4 Z8 Z10 Z12 Z14 Z26 C2 C3 C1 Z3 Freescale Semiconductor, Inc. Z6 Z5 Z7 C4 C5 Z9 Z11 DUT C6 Z13 C7 R2 C13 C14 C15 C16 C17 C20 Z15 Z25 Z17 Z19 Z21 Z23 Balun 2 B2 L2 C22 VGG B5 + C29 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 C18 C12 C9 B1 Z27 RF OUTPUT 0.420″ 0.090″ 0.125″ 0.095″ 0.600″ 0.200″ 0.500″ x 0.080″ x 0.420″ x 0.220″ x 0.220″ x 0.220″ x 0.630″ x 0.630″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26 Z27 + + C23 C24 + VDD C28 0.040″ x 0.630″ Microstrip 0.040″ x 0.630″ Microstrip 0.330″ x 0.630″ Microstrip 0.450″ x 0.630″ Microstrip 0.750″ x 0.220″ Microstrip 0.115″ x 0.420″ Microstrip 0.130″ x 0.080″ Microstrip 0.350″ x 0.080″ Microstrip Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9120R3 MRF9120LR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Table 1. 880 MHz Broadband Test Circuit Component Designations and Values Description Value, P/N or DWG Manufacturer Long Ferrite Beads, Surface Mount 95F787 Newark B2, B4 Short Ferrite Beads, Surface Mount 95F786 Newark C1, C2 68 pF Chip Capacitors, B Case 100B680JP500X ATC C3, C6 0.8 - 8.0 pF Variable Capacitors 44F3360 Newark C4 7.5 pF Chip Capacitor, B Case 100B7R5JP150X ATC C5 3.3 pF Chip Capacitor, B Case 100B3R3CP150X ATC C7, C8 11 pF Chip Capacitors, B Case 100B110BCA500X ATC C9, C10, C21, C22 51 pF Chip Capacitors, B Case 100B510JP500X ATC C11, C12 6.2 pF Chip Capacitors, B Case 100B6R2BCA150X ATC C13 4.7 pF Chip Capacitor, B Case 100B4R7BCA150X ATC C14 5.1 pF Chip Capacitor, B Case 100B5R1BCA150X ATC C15 3.0 pF Chip Capacitor, B Case 100B2R7BCA150X ATC C16 2.7 pF Chip Capacitor, B Case 100B3R0BCA150X ATC C17 0.6 - 4.5 pF Variable Capacitor 44F3358 Newark C18, C19 47 pF Chip Capacitors, B Case 100B470JP500X ATC C20 0.4 - 2.5 pF Variable Capacitor 44F3367 Newark C29, C30 10 µF, 35 V Tantalum Chip Capacitors 93F2975 Newark C23, C24, C25, C26 22 µF, 35 V Tantalum Chip Capacitors 92F1853 Newark C27, C28 220 µF, 50 V Electrolytic Capacitors 14F185 Newark Balun 1, Balun 2 Xinger Surface Mount Balun Transformers 3A412 Anaren L1, L2 12.5 nH Mini Spring Inductors A04T - 5 Coilcraft R1, R2 510 Ω, 1/4 W Chip Resistors WB1, WB2, WB3, WB4 10 mil Brass Wear Blocks Board Material 30 mil Glass Teflon, εr = 2.55 Copper Clad, 2 oz Cu 900 MHz Push - Pull Rev 01B CMR PCB Etched Circuit Board 900 MHz Push - Pull Rev 01B CMR VGG C30 B3 Garret MRF9120 900 MHz PUSH PULL Rev 01B B4 C25 C26 INPUT C5 C4 C1 C6 R2 C9 C7 Balun2 L1 WB3 C3 C11 WB4 C2 C8 CUTOUT AREA R1 C21 WB1 Balun1 C27 VDD B6 C10 WB2 Freescale Semiconductor, Inc. Part B1, B3, B5, B6 C12 C19 C17 OUTPUT C16 C13−C15 C18 C20 L2 C22 C23 C24 VGG B1 C29 B2 C28 VDD B5 Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 5 Freescale Semiconductor, Inc. 17 Gps 16 η 45 40 VDD = 26 Vdc Pout = 120 W (PEP) IDQ = 2 x 500 mA Tone Spacing = 100 kHz 15 14 35 −30 13 IMD −32 12 IRL −34 11 −36 −38 860 865 870 875 880 885 890 895 −12 −14 −16 −18 900 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance 1500 mA 1200 mA 17 1000 mA 16.5 800 mA 16 VDD = 26 Vdc f1 = 880.0 MHz f2 = 880.1 MHz 15.5 15 1 10 −10 −20 VDD = 26 Vdc f1 = 880.0 MHz f2 = 880.1 MHz −30 800 mA −40 1000 mA −50 −60 1 100 Pout, OUTPUT POWER (WATTS) PEP 100 10 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power −10 18 VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 880.0 MHz f2 = 880.1 MHz −30 −40 3rd Order −50 5th Order −60 60 Gps 16 Gps, POWER GAIN (dB) −20 1200 mA 1500 mA 7th Order 50 14 40 12 30 10 20 η VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz 8 −70 6 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power MRF9120R3 MRF9120LR3 6 1000 10 h, DRAIN EFFICIENCY (%) 17.5 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 18 IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc. 10 −10 IRL, INPUT RETURN LOSS (dB) 50 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 18 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 0 10 1 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 18 60 G ps , POWER GAIN (dB) Gps 16 40 14 20 η 12 0 VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 880.0 MHz f2 = 880.1 MHz 10 −20 8 −40 IMD −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 18 40 Gps 16 20 η 14 0 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz IS−97, Pilot, Sync, Paging Traffic Codes 8 through 13 12 10 −20 −40 750 kHz 8 −60 1.98 MHz 6 −80 0.1 1 10 h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB) Figure 8. Power Gain, Efficiency and IMD versus Output Power G ps , POWER GAIN (dB) Freescale Semiconductor, Inc. 6 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Power Gain, Efficiency and ACPR versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 7 Freescale Semiconductor, Inc. Zo = 5 Ω Zload f = 895 MHz f = 865 MHz f = 865 MHz Zsource Freescale Semiconductor, Inc. f = 895 MHz VDD = 26 V, IDQ = 2 × 500 mA, Pout = 120 W PEP f MHz Zsource Ω Zload Ω 865 4.89 - j0.2 4.9 - j0.5 880 4.54 + j0.07 4.6 - j0.32 895 3.29 - j1.3 4.2 - j0.04 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 10. Series Equivalent Input and Output Impedance MRF9120R3 MRF9120LR3 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 9 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. NOTES MRF9120R3 MRF9120LR3 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9120R3 MRF9120LR3 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X A A bbb 4 G Q M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON M3 SCREW. B L 1 2 B (FLANGE) 5 3 4X K 4X D bbb Freescale Semiconductor, Inc. 4 T A M M B M ccc ccc M T A M B T A M B M R M N E M C (LID) F (LID) H S (INSULATOR) PIN 5 M bbb (INSULATOR) bbb M T A M M T B M SEATING PLANE T A M B M DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.085 0.115 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 2.16 2.92 10.80 BSC 21.64 22.05 21.62 22.07 3.00 3.51 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE CASE 375B - 04 ISSUE E NI - 860 Information in this document is provided solely to enable system and software implementers to use Motorola products. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://www.freescale.com MRF9120R3 MRF9120LR3 12 MRF9120/D MOTOROLA RF DEVICE DATA More Information On This Product, For For More Information On This Product, www.freescale.com Go Go to: to: www.freescale.com