Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC2115R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc... RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2 The MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover W - CDMA modulation formats. Final Application Typical W - CDMA Performance: - 45 dBc ACPR, 2110 - 2170 MHz, VDD = 27 Volts, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH Power Gain — 30 dB PAE = 16% Driver Application Typical W - CDMA Performance: - 53 dBc ACPR, 2110 - 2170 MHz, VDD = 26 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH Power Gain — 34 dB • Gain Flatness = 0.3 dB from 2110 - 2170 MHz • P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110 - 2170 MHz • Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. 2170 MHz, 26 V, 23/34 dBm W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER CASE 978 - 03 PFP - 16 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C PIN CONNECTIONS VGS3 VGS2 VGS1 Quiescent Current Temperature Compensation RFin IC VDS1 VDS2 VDS3/RFout 3 Stages IC N.C. 1 16 N.C. VGS3 2 15 VDS3/RFout VGS2 3 14 VDS3/RFout VGS1 4 13 VDS3/RFout RFin 5 12 VDS3/RFout RFin 6 11 VDS3/RFout VDS1 VDS2 7 8 10 9 VDS3/RFout N.C. (Top View) NOTE: Exposed backside flag is source terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. Rev. 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 1 Freescale Semiconductor, Inc. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Value Unit RθJC °C/W Driver Application (Pout = +0.2 W CW) Stage 1, 26 Vdc, IDQ = 96 mA Stage 2, 26 Vdc, IDQ = 204 mA Stage 3, 26 Vdc, IDQ = 111 mA 3.5 Output Application (Pout = +2.5 W CW) Stage 1, 27 Vdc, IDQ = 56 mA Stage 2, 27 Vdc, IDQ = 61 mA Stage 3, 27 Vdc, IDQ = 117 mA 2.7 ESD PROTECTION CHARACTERISTICS Test Conditions Class Freescale Semiconductor, Inc... Human Body Model 1 (Minimum) Machine Model M1 (Minimum) Charge Device Model C2 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22 - A113 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz Power Gain Gps 31 34 — dB Gain Flatness GF — 0.3 0.5 dB Input Return Loss IRL — - 12 - 10 dB Group Delay — — 1.7 — ns Phase Linearity — — 0.2 — ° 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 23 dBm, 5 MHz Offset ACPR — - 53 - 50 dBc 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 28 dBm, 5 MHz Offset ACPR — - 50 — dBc W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 2110 - 2170 MHz Power Gain Gps — 30 — dB Gain Flatness GF — 0.2 — dB Input Return Loss IRL — - 12 — dB Power Added Efficiency PAE — 16 — % ACPR — - 45 — dBc 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 34 dBm, 4 MHz Offset MHVIC2115R2 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 1 16 2 15 Vbias3 + R3 C1 C2 C15 Vbias2 3 + R2 C5 14 C3 Vbias1 4 13 5 12 RF OUTPUT + R1 C14 RF INPUT C4 6 VD1 + Freescale Semiconductor, Inc... C16 C21 VD2 + C13 11 Quiescent Current Temperature Compensation VD3 7 + C8 C7 10 + C11 C1, C5, C8, C12, C14, C19 C2, C3, C4, C7, C11, C18 C6, C10, C17 C9, C15, C16 + C6 C17 8 C12 C9 C18 C19 + C20 9 C10 1 µF SMT Tantalum Chip Capacitors 0.01 µF Chip Capacitors (0805C103K5RACTR) 6.8 pF Chip Capacitors, ACCU−P (AVX 08051J6R8BBT) 1.8 pF Chip Capacitors, ACCU−P (AVX 08051J1R8BBT) C13, C20, C21 330 µF Electrolytic Capacitors (MCR35V337M10X16) R1, R2, R3 1 kΩ Chip Resistors (0805) PCB Arlon, 0.020″, εr = 2.55 Figure 1. MHVIC2115R2 Demo Board Schematic Vbias1 Vbias2 Vbias3 R1 R2 R3 VGS C2 C14 C5 C4 VG1 VG2 VG3 C1 MHVIC2115R2 Rev 1 C3 C15 C9 C16 C6 C10 C17 C7 C18 C12 C8 C19 C11 C21 VDD1 C13 VDD2 C20 VDD3 Figure 2. MHVIC2115R2 Demo Board Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 50 0 40 1.8 1.6 −5 S21 TC = 85_C 1.4 25_C 20 −15 S11 10 −20 0 −25 S11 (dB) −10 DELAY, (nSEC) S21 (dB) 30 1.2 −30_C 1 0.8 0.6 0.4 −10 −30 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA −20 −35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0 2100 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150 2160 f, FEQUENCY (MHz) f, FREQUENCY (MHz) Figure 3. Broadband Frequency Response Figure 4. Delay versus Frequency 40 2170 2180 2170 2180 20 38 TC = −30_C 37 36 25_C 35 34 85_C 33 32 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 39 TC = 85_C 15 25_C −30_C 10 5 VDD = 27 Vdc, Pout = 23 dBm CW VDD = 27 Vdc, Pout = 23 dBm CW 31 30 2100 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150 2160 2170 0 2100 2180 2110 2120 2130 2140 2150 2160 f, FREQUENCY (MHz) f, FREQUENCY, (MHz) Figure 5. Power Gain versus Frequency Figure 6. Input Return Loss versus Frequency 40 70 39 37 65 TC = 25_C TC = −30_C S21 PHASE(_) 38 G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... VDD = 27 Vdc, Pout = 23 dBm CW 0.2 36 25_C 35 34 85_C 33 60 −30_C 55 50 85_C 32 45 VDD = 27 Vdc, f = 2140 MHz 31 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 30 20 25 30 35 VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 40 40 45 20 25 30 35 40 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 7. Power Gain versus Output Power Figure 8. S21 Phase versus Output Power MHVIC2115R2 4 45 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. −40 −40 VDD = 27 Vdc 3GPP Test Model 1 64 DPCH −42 −44 −45 −46 VDD = 27 Vdc Pout = 23 dBm Two−Tone Avg. Tone Spacing = 100 kHz IDQ3 = 100 mA IMR (dBc) −50 −48 −50 2110 MHz −52 2170 MHz −54 −56 −58 17 19 21 −55 3rd Order 23 25 27 29 31 111 mA 100 mA −65 2140 MHz −60 15 122 mA −60 5th Order 33 −70 2000 35 122 mA 2050 2100 2150 2200 2250 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 9. W - CDMA ACPR versus Output Power Figure 10. Two - Tone IMR versus Frequency −50 6.00 −52 5.75 5.50 VBIAS1 5.25 5.00 VBIAS2 Vbias, FIXTURE BIAS VOLTAGE (V) −54 3rd Order −56 −58 VDD = 27 Vdc, f = 2140 Pout = 23 dBm, Two−Tone Avg. −60 −62 5th Order −64 −66 −68 −70 5 10 15 20 25 VDD = 27 Vdc R1 = R2 = R3 = 1000 Ohms VBIAS3 3.75 3.50 3.25 3.00 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 TONE SPACING (MHz) T, TEMPERATURE (C) Figure 11. Two - Tone Broadband Performance Figure 12. Fixture Bias versus Temperature Vgs, IC GATE BIAS VOLTAGE (V) 0 4.75 4.50 4.25 4.00 4.20 2.00 4.10 1.80 4.00 3.90 1.60 Vgs1 & Vgs2 Igs1 & Igs2 3.80 3.60 1.40 1.20 VDD = 27 Vdc R1 = R2 = R3 = 1000 Ohms 3.70 Vgs3 1.00 0.80 3.50 0.60 3.40 0.40 Igs3 3.30 3.20 −40 −30 −20 −10 2300 Igs, GATE BIAS CURRENT (mA) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... ACPR, ADJACENT CHANNEL POWER RATIO (dBc) TYPICAL CHARACTERISTICS 0.20 0.00 0 10 20 30 40 50 60 70 80 90 100 T, TEMPERATURE (C) Figure 13. Gate Bias versus Temperature MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 5 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Zo = 50 Ω Zin f = 2170 MHz f = 2110 MHz Zload f = 2170 MHz f = 2110 MHz VDD = 27 Vdc, IDQ = 1411 mA, Pout = 15 W Avg. Zin f MHz Zin Ω Zload Ω 2110 72.55 + j12.8 4.25 + j1.00 2140 71.40 + j9.9 4.13 + j1.37 2170 70.20 + j7.1 4.12 + j1.46 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 14. Series Equivalent Input and Load Impedance MHVIC2115R2 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 D e/2 D1 8 9 E1 8X M BOTTOM VIEW E C B S ÇÇ ÇÇ ÉÉ ÇÇ b1 Y c A A2 c1 b DATUM PLANE SEATING PLANE H C aaa M ccc C q W GAUGE PLANE W L A1 1.000 0.039 DETAIL Y C A SECT W - W L1 Freescale Semiconductor, Inc... bbb B S NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 CASE 978 - 03 ISSUE B PFP- 16 Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MHVIC2115R2 8 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MHVIC2115R2/D