MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 19 Watts Avg. Power Gain — 14.5 dB Efficiency — 26% IM3 — - 37.5 dBc ACPR — - 40.5 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Qualified Up to a Maximum of 32 VDD Operation • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 19 W AVG., 2 x W - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S21090LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S21090LSR3 MAXIMUM RATINGS Symbol Value Unit Drain- Source Voltage Rating VDSS 65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 224 1.28 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 90 W CW Case Temperature 80°C, 19 W CW RθJC 0.78 0.80 °C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MRF5S21090LR3 MRF5S21090LSR3 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2.5 2.9 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) — 3.9 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.25 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 5 — S Crss — 1.7 — pF Characteristic Freescale Semiconductor, Inc... OFF CHARACTERISTICS ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12.5 14.5 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 24 26 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 — - 37.5 - 35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) ACPR — - 40.5 - 38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL — - 15 -9 dB (1) Part is internally matched both on input and output. MRF5S21090LR3 MRF5S21090LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. C3 R1 R4 R3 VGG C4 R2 C7 C10 C5 C8 C11 + C13 C12 VDD W1 C9 Z4 RF INPUT Z1 Z2 C14 Z3 Z8 Z6 Z13 Z9 C6 DUT Z10 Z18 Z15 Z11 Z12 Z7 Z16 C2 C1 Z17 Z20 Z19 Z21 RF OUTPUT C15 Z14 Freescale Semiconductor, Inc... Z5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 1.0856″ x 0.080″ Microstrip 0.130″ x 0.080″ Microstrip 0.230″ x 0.080″ Microstrip 0.347″ x 0.208″ Microstrip 0.090″ x 0.208″ Microstrip 0.650″ x 0.176″ Taper 0.623″ x 0.610″ Microstrip 0.044″ x 0.881″ Microstrip 0.044″ x 0.869″ Microstrip 1.076″ x 0.446″ Microstrip 0.320″ x 0.393″ Microstrip Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 PCB 0.609″ x 0.220″ Microstrip 0.290″ x 0.106″ Microstrip 0.290″ x 0.106″ Microstrip 0.080″ x 0.025″ Microstrip 1.080″ x 0.160″ Microstrip 0.180″ x 0.080″ Microstrip 0.260″ x 0.147″ Microstrip 0.500″ x 0.080″ Microstrip 0.199″ x 0.147″ Microstrip 0.365″ x 0.080″ Microstrip Arlon GX0300 - 55- 22, 0.03″, εr = 2.55 Figure 1. MRF5S21090 Test Circuit Schematic Table 1. MRF5S21090 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 9.1 pF Chip Capacitor, B Case 100B9R1CP 500X ATC C2 8.2 pF Chip Capacitor, B Case 100B8R2CP 500X ATC C3 2.0 pF Chip Capacitor, B Case 100B2R0BP 500X ATC C4, C12 0.1 µF Chip Capacitors, B Case CDR33BX104AKWS Kemet C5 5.6 pF Chip Capacitor, B Case 100B5R6CP 500X ATC C6 5.1 pF Chip Capacitor, B Case 100B5R1CP 500X ATC C7 7.5 pF Chip Capacitor, B Case 100B7R5JP 500X ATC C8 1.2 pF Chip Capacitor, B Case 100B1R2BP 500X ATC C9, C10 0.56 µF Chip Capacitors, B Case 700A561MP 150X ATC C11 1000 pF Chip Capacitor, B Case 100B102JP 500X ATC C13 470 µF, 35 V Electrolytic Capacitor 95F4579 Newark C14, C15 0.4 – 2.5 Variable Capacitors, Gigatrim 44F3367 Newark R1 1 kW Chip Resistor D5534M07B1K00R Newark R2 560 kW Chip Resistor CR1206 564JT Newark R3, R4 12 W Chip Resistors RM73B2B120JT Garrett Electronics W1 Wire Strap MOTOROLA RF DEVICE DATA MRF5S21090LR3 MRF5S21090LSR3 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. R1 VGG C4 R2 C10 C9 R3 C13 C7 C8 C3 C5 C11 C6 VDD R4 W1 C12 C1 Freescale Semiconductor, Inc... C14 CUT OUT AREA C2 C15 MRF5S21090 Rev 5 Figure 2. MRF5S21090 Test Circuit Component Layout MRF5S21090LR3 MRF5S21090LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η G ps , POWER GAIN (dB) 13 35 VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 30 25 12 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) IRL 11 20 10 −20 9 −25 8 −30 IM3 7 6 −35 −40 ACPR 5 2080 2100 2120 2140 2160 −45 2200 2180 −10 −15 −20 −25 −30 −35 IRL, INPUT RETURN LOSS (dB) 14 IM3 (dBc), ACPR (dBc) Gps η, DRAIN EFFICIENCY (%) 40 15 17 IDQ = 1200 mA G ps , POWER GAIN (dB) VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing 1000 mA 15 850 mA 14 650 mA 13 450 mA IM3, 3RD ORDER INTERMODULATION DISTORTION (dBc) −15 16 −20 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing −25 −30 IDQ = 450 mA 1200 mA −35 −40 1000 mA −45 1 100 10 850 mA 650 mA −50 12 10 1 Pout, OUTPUT POWER (WATTS) PEP 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. 3rd Order Intermodulation Distortion versus Output Power −20 57 −25 Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance 3rd Order −30 −35 5th Order −40 −45 7th Order −50 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA Two−Tone Measurements, Center Frequency = 2140 MHz −55 −60 0.1 Ideal 55 P3dB = 51.17 dBm (130.9 W) 53 51 P1dB = 50.47 dBm (111.4 W) Actual 49 VDD = 28 Vdc, IDQ = 850 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 2140 MHz 47 45 1 10 30 32 34 36 38 40 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA 42 MRF5S21090LR3 MRF5S21090LSR3 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 40 VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) −20 −30 η 25 −30 −35 20 Gps 15 −40 IM3 10 ACPR 5 0 1 3.84 MHz Channel BW −40 −25 −50 −60 (dB) 30 −20 IM3 (dBc), ACPR (dBc) 35 −15 −70 −80 −90 −50 −110 −ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW −IM3 @ 3.84 MHz BW −55 −120 −25 −20 −45 −100 10 −15 −10 −5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Pout, POWER (WATTS) W−CDMA Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 109 MTBF FACTOR (HOURS x AMPS 2 ) 100 10 PROBABILITY (%) Freescale Semiconductor, Inc... η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 108 107 106 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 11. MTBF Factor versus Junction Temperature MRF5S21090LR3 MRF5S21090LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. f = 2200 MHz f = 2100 MHz Zo = 10 Ω Zload f = 2200 MHz Freescale Semiconductor, Inc... f = 2100 MHz Zsource VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg. f MHz Zsource Ω Zload Ω 2100 3.4 - j5.1 2.4 - j2.0 2120 3.2 - j5.4 2.2 - j2.1 2160 3.0 - j4.4 2.1 - j1.9 2200 3.0 - j4.0 1.8 - j1.6 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5S21090LR3 MRF5S21090LSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S21090LR3 MRF5S21090LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA MRF5S21090LR3 MRF5S21090LSR3 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S21090LR3 MRF5S21090LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb Freescale Semiconductor, Inc... N M T A B M M M ccc M T A M aaa M T A M M T A B M (LID) B S (LID) ccc H R (INSULATOR) M (INSULATOR) B M C F E A T A SEATING PLANE 4X U (FLANGE) 1 K 2X 2 B (FLANGE) D bbb M T A M B M N (LID) ccc M R M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H E A A (FLANGE) MOTOROLA RF DEVICE DATA F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE C 3 MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE F NI - 780 MRF5S21090LR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465A - 06 ISSUE F NI - 780S MRF5S21090LSR3 MRF5S21090LR3 MRF5S21090LSR3 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S21090LR3 MRF5S21090LSR3 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, MRF5S21090L/D 12 Go to: www.freescale.com