ONSEMI MJ15025

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by MJ15023/D
SEMICONDUCTOR TECHNICAL DATA
The MJ15023 and MJ15025 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications.
*Motorola Preferred Device
• High Safe Operating Area (100% Tested) —
2 A @ 80 V
• High DC Current Gain —
hFE = 15 (Min) @ IC = 8 Adc
16 AMPERE
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
250 WATTS
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CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
MJ15023
MJ15025
Unit
Collector–Emitter Voltage
VCEO
200
250
Vdc
Collector–Base Voltage
VCBO
350
400
Vdc
Emitter–Base Voltage
VEBO
5
Vdc
Collector–Emitter Voltage
VCEX
400
Vdc
Collector Current — Continuous
Peak (1)
IC
16
30
Adc
Base Current — Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
250
1.43
Watts
W/_C
TJ, Tstg
– 65 to + 200
_C
Symbol
Max
Unit
RθJC
0.70
_C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
200
250
—
—
—
—
250
250
—
—
500
500
—
500
5
2
—
—
15
5
60
—
—
1.4
4.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
MJ15023
MJ15025
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
MJ15023
MJ15025
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 200 Vdc, IB = 0)
MJ15023
MJ15025
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
Both
µAdc
ICEX
µAdc
ICEO
IEBO
µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non–repetitive))
(VCE = 80 Vdc, t = 0.5 s (non–repetitive))
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
—
2.2
Vdc
fT
4
—
MHz
Cob
—
600
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2%.
IC, COLLECTOR CURRENT (AMPS)
100
50
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on T J(pk) = 200_C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
TC = 25°C
20
10
5.0
1.0
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.2
0.1
0.1
0.2
20
50 100
250 500
0.5 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1k
Figure 1. Active–Region Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
4000
3000
Cib
C, CAPACITANCE (pF)
TJ = 25°C
1000
500
Cob
100
0.3 0.5
1.0
5.0
10
30
50
100
300
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS
TJ = 25°C
VCE = 10 V
fTest = 1 MHz
9
8
7
6
5
4
3
2
1
0
0.1
2.0
0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMPS)
VR, REVERSE VOLTAGE (VOLTS)
10
5.0
Figure 3. Current–Gain — Bandwidth Product
Figure 2. Capacitances
200
TJ = 100°C
VCE = 4.0 V
1.8
V, VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
TJ = 25°C
50
20
10
1.4
1.0
TJ = 25°C
VBE(on) @ VCE = 4.0 V
0.8
5.0
100°C
25°C
0.2
2.0
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain
Motorola Bipolar Power Transistor Device Data
10
20
0
VCE(sat) @ IC/IB = 10
100°C
0.1
1.0
2.0
0.5
IC, COLLECTOR CURRENT (AMPS)
5.0
10
Figure 5. “On” Voltages
3
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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4
◊
Motorola Bipolar Power Transistor Device Data
*MJ15023/D*
MJ15023/D