MOTOROLA MMDJ3N03BJT

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by MMDJ3N03BJT/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
SO–8 for Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
• Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain — hFE
= 100 Vdc (Min) @ IC = 1.0 Adc
= 90 Vdc (Min) @ IC = 3.0 Adc
• Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.235 Vdc (Max) @ IC = 1.2 Adc
= 0.5 Vdc (Max) @ IC = 5.0 Adc
• Miniature SO–8 Surface Mount Package – Saves Board Space
DUAL BIPOLAR
POWER TRANSISTOR
NPN SILICON
30 VOLTS
3 AMPERES
CASE 751–05, Style 16
(SO–8)
C
E
B
C
E
B
Emitter–1
1
8
Collector–1
Base–1
2
7
Collector–1
Emitter–2
3
6
Collector–2
Base–2
4
5
Collector–2
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MARKING: 3N3BJT
ENG
Schematic
Top View
Pinout
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCB
45
Vdc
VCEO
30
Vdc
VEB
± 8.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Base Current — Continuous
IB
1.0
Adc
TJ, Tstg
– 55 to + 150
_C
Symbol
Max
Unit
RθJA
62.5
_C/W
Total Power Dissipation @ TA = 25_C(1)
Derate above 25_C
PD
2.0
16
Watts
mW/_C
Maximum Temperature for Soldering
TL
260
_C
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction to Ambient(1)
(1) Mounted on 2” sq. FR–4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1996
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MMDJ3N03BJT
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
—
—
30
tbd
—
—
50
—
—
1.0
—
—
0.130
—
0.235
0.500
—
—
—
—
—
1.0
100
90
180
165
—
—
—
80
135
—
200
250
fT
tbd
—
—
MHz
td
tr
—
215
—
ns
—
100
—
ns
ts
tf
—
530
—
ns
—
60
—
ns
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
Temperature Coefficient (Positive)
VCEO(sus)
Collector Cutoff Current
(VCE = 25 Vdc)
ICEO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0 Adc)
IEBO
Vdc
V/°C
µAdc
mAdc
ON CHARACTERISTICS(1)
Collector–Emitter Saturation Voltage
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
Base–Emitter On Voltage
(IC = 2.0 Adc, VCE = 1.0 Vdc)
VBE(on)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
Vdc
Vdc
Vdc
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 8.0 Vdc, f = 1.0 MHz)
Cibo
Current–Gain — Bandwidth Product(2)
pF
pF
SWITCHING CHARACTERISTICS(1)
Resistive Load
Delay Time
Rise Time
(IC = 2.0 Adc, IB1 = IB2 = 30 mAdc, VCC = 10 Vdc)
Storage Time
Fall Time
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S ftest
2
Motorola Bipolar Power Transistor Device Data
MMDJ3N03BJT
PACKAGE DIMENSIONS
–A–
M
1
4
R
4X
0.25 (0.010)
–B–
X 45 _
B
M
5
P
8
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
J
M_
C
F
G
–T–
K
SEATING
PLANE
8X
D
0.25 (0.010)
M
T B
S
A
S
CASE 751–05
ISSUE P
Motorola Bipolar Power Transistor Device Data
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.18
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
STYLE 16:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
EMITTER, DIE #1
BASE, DIE #1
EMITTER, DIE #2
BASE, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #1
COLLECTOR, DIE #1
3
MMDJ3N03BJT
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
4
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*MMDJ3N03BJT/D*
Motorola Bipolar Power Transistor Device
Data
MMDJ3N03BJT/D