MOTOROLA MPC17511

Freescale Semiconductor, Inc.
M
Product Preview
SMARTMOS
R
MPC17511
Freescale Semiconductor, Inc...
1 Channel H-Bridge Driver IC
MPC17511 is a monolithic type SMOS5AP
SMARTMOS IC built in 1channel H-Bridge
Driver constituted LDMOSFET, input section
can be directly interfaced from the MCU.
This IC can control 4 mode output function
(Forward, Reverse, Brake, Open) by input logic.
This IC can drive various type of micro motor
and low loss.
16PIN SVM
Pin Connections
Features
-Manufactured by SMOS5AP process technology
-Built in 1 Channel Circuit of H-Bridge Driver
-Built in Charge-pump Circuit
-4 Mode Drive(Forward, Reverse, Brake, Open)
-Direct Interface from the MCU
-Low ON-Resistance Ron=0.6 ohm(Max.)
-IDR=1.0A (Cont.)
-Low Consumption Power
-Built in Shoot Through Current Prevention Circuit
1
C2L
C2H
16
2
C1H
VG
15
3
C1L
TSWITCH 14
4
VM
5
VC
6
IN1
7
IN2
IN3
10
8
EN
LGND
9
MPC17511
OUTB 13
PGND 12
OUTA 11
-Built in Low Voltage Shutdown Circuit
-PWM Control frequency 200kHz(Max.)
(Top View)
-Comes in 16-pin VMFP
(pin pitch : 0.65mm)
*SMARTMOS is a registered trademark of Motorola Inc.
*Specifications in this data sheet may be changed without prior notice.
1
MPC17511 :MAR.08. 2002 REV.0.5
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Block Diagram
C2L 1
16 C2H
OSC, Charge Pump
3 C1L
C1H 2
Low voltage
15
14 TSWITCH
VC
5
4 VM
IN1
6
IN2
7
vc
IN3
Level Shifter Predriver
VG
Control Logic
Freescale Semiconductor, Inc...
Detector
10
11 OUTA
13 OUTB
12 PGND
vc
EN
9 LGND
8
*Each GND pin are connected by Metal.
Function Table
Z : High impedance
EN
IN1
IN2
IN3
H
H
H
H
H
L
H
L
H
X
X
X
H
L
L
L
X
H
H
OUTB
TSWITCH
L
H
L
L
L
H
X
X
X
X
Z
Z
X
X
X
L
L
L
X
X
H
X
X
L
X
X
L
X
X
H
2
OUTA
X : Don't care
MPC17511 :MAR.08. 2002 REV.0.5
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*1
Maximum Ratings
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Rating
Symbol
Min.
Max.
Unit
Driver Circuit Power Supply Voltage
VM
- 0.5
8.0
V
Pre-Driver Circuit Power Supply Voltage
VG
- 0.5
14.0
V
Control Circuit Power Supply Voltage
VC
- 0.5
7.0
V
Singnal Input Voltage
VIN
- 0.5
VC+0.5
V
Driver Output Current (continuous)
IDR
---
1.0
A
Driver Output Current (pulsed)
IDRp
---
3.0
A
Tj
- 55
150
degC
Storage Temperature Range
Tstg
---
150
degC
Thermal Resistance
Rθja
*2
Operating Junction Temperature
Power Dissipation
*3
*4
deg./W
150
PD
---
830
mW
*1) Device may be damaged when used over the ratings.
*2) Ta=25C, Peak time is within 10ms at intervals 0.2seconds.
*3) 37 X 50 X 1.6[mm] glass EPOXY Board mount.
*4) Ta=25C
Recommended Operating Condition
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Driver Circuit Power Supply Voltage
VM
2.0
5.0
6.8
V
Control Circuit Power Supply Voltage
VC
2.7
5.0
5.7
V
Signal Input Voltage
VIN
0
---
VC
V
Pulse Input Frequency
FIN
---
---
200
kHz
Input Pulse Rise Time
TR
---
---
1.0
us
Input Pulse Fall Time
TF
---
---
1.0
Topr
-20
25
65
us
。
C
0.01
0.1
1.0
uF
12
13
13.5
V
Operating Ambient Temperature
Capacitor for Charge Pump
C1,C2,C3
Pre-Driver Circuit Power Supply Voltage
VG
3
MPC17511 :MAR.08. 2002 REV.0.5
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DC CHARACTERISTICS
(Ta=25C, VC=VM=5.0V, GND=0V)
Symbol
Characteristics
Quiescent Power Supply Current
Driver Circuit Power Supply Current
Control Circuit Power Supply Current
Min.
Typ.
Max.
Unit
IMO
---
---
1.0
uA
ICO
---
---
1.0
mA
IC
IG
---
---
3.0
mA
---
---
0.7
mA
Test
circuit
A
*1
G
*2
Active Power Supply Current
Control Circuit Power Supply Current
Pre-Driver Circuit Power Supply Current
Logic Input Function
VIH
VIL
IIH
IIL
VCx0.7
----- 1.0
---------
--VCx0.3
1.0
---
Driver Output ON Resistance
RON
---
0.46
Pullup Resistance (EN,IN3)
Rup
50
Charge-pump Output Voltage
VG
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High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
Charge-pump Output Voltage (IG=-1mA)
VGload
Low Voltage Detection Circuit
Detection Voltage VCDET
TSWITCH OUT
VOH
IOUT=-50uA
IIN=50uA
VOL
V
V
uA
uA
B
0.60
ohm
D
*4
100
200
kohm
12
12.8
13
V
C
*5
10
11.2
---
V
E
1.5
2.0
2.5
V
F
V
V
B
VG-0.5
LGND
VG-0.1
VG
LGND+0.1 LGND+0.5
*3
*6
*1) ICO includes current to the pre-driver circuit.
*2) IC include s current to the pre-driver circuit. IC:Fin100kHz. IG:Fin20kHz.
*3) 2.7V < VC < 5.7V
*4) IDR=1.0[A] source+sink
*5) When no input logic signal.
*6) Detection voltage is defined output become High-impedance when VC voltage is dropped.
When the gate voltage VG is applied from an external source, VG=7.5[V]
AC CHARACTERISTICS
(Ta=25C, VC=VM=5.0V, GND=0V )
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test
circuit
Output Propagation Delay Time
Turn-ON time
Turn-Off time
tPLH
tPHL
-----
0.1
0.1
0.5
0.5
us
us
D
TSWITCH Propagation Delay Time
Turn-ON time
Turn-Off time
tSON
tSOFF
-----
0.15
0.15
0.5
0.5
us
us
C2
Charge-pump Circuit Rise time
tVGON
---
1.0
3.0
ms
C
Low Voltage Detection Circuit
Detection time
tVCDET
---
---
10
ms
F
*1
*1) When C1=C2=C3=0.1[uF]
tPLH,tPHL (tSON,tSOFF)Timing Chart
tVCDET Timing Chart
VCDETon
IN1,IN2
(IN3)
50%
VC
50%
2.5
50%
VCDEToff
50%
1.5
tPLH
(tSON)
OUTA,OUTB
(TSWITCH)
tPHL
(tSOFF)
tVCDETon
tVCDEToff
90%
90%
IM
10%
0%(<1uA)
4
MPC17511 :MAR.08. 2002 REV.0.5
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Pin Description
Symbol
PIN No.
VC
5
VM
4
OUTA
11
OUTB
13
Simplified Circuit Schematic
Freescale Semiconductor, Inc...
5
Function
Control Circuit
Power Supply Pin
4
Driver Power Supply
Voltage Input Pin
13
11
Driver Output Pin
Driver Output Pin
VC
TSWITCH
14
C1L
3
Output pin of
stepÅ|up voltage
14
VC
1
These pins connect
to charge pump
capacitors.
(Negative pole)
3
C2L
1
C1H
2
C2H
16
These pins connect
to charge pump
capacitors.
(Positive pole)
VG
15
Pre-Driver Circuit
Power Supply Pin
IN1
6
15
VG
16
2
C2H
5
C1H
VC
VC
Control Signal
Input Pin 1
6
7
IN2
7
EN
8
Control Signal
Input Pin 2
VC
VC
Enable Control
Signal Input Pin
9
10
Control Signal
Signal Input Pin 3
for TSWITCH
IN3
10
LGND
9
Logic GND Pin
PGND
12
Driver GND Pin
5
MPC17511 :MAR.08. 2002 REV.0.5
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Test Circuit
Capacitor for charge pump (C1,C2.C3)= 0.1[uF]
5V
5V
ICO A
A
VC
5V
5V
VC
VM
IMO
VM
IN1
IN1
IN2
IN2
IN3
IN3
EN
Freescale Semiconductor, Inc...
MPC17511
C1L
C1H
A IIN
EN
MPC17511
C1L
C1H
OUTA
C2L
VIN
OUTA
C2L
OUTB
C2H
C2H
VG
50uA
OUTB
VG
TSWITCH
GND
GND
V
Test Circuit A
Test Circuit B
5V
5V
VM
VC
MPC17511
IN1
IN2
IN3
IN1
IN2
EN
C1L
C1H
C2L
C2H
OUTA
C2L
C2H
VG
OUTB
C1L
C1H
V
5V
5V
VC
VM
OUTA
OUTB
MPC17511
TSWITCH
VG
GND
500pF
PGND LGND
VC
50%
50%
IN3
tVGON
tSON
VG
11V
tSOFF
90%
TSWITCH
10%
Test Circuit C2
Test Circuit C
6
MPC17511 :MAR.08. 2002 REV.0.5
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50uA
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Capacitor for charge pump (C1,C2.C3)= 0.1[uF]
5V
6V
VC
VM
IN1
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C2L
C2H
VC
VM
IN1
IN2
EN
EN
MPC17511
C1L
OUTA
C1H
5V
IN2
MPC17511
C1L
5V
OUTA
C1H
C2L
OUTB
OUTB
C2H
R=6ohm
VG
VG
GND
GND
V
1mA
Test Circuit D
Test Circuit E
5V
5V
5V
A
VC
VM
VC
IN1
VM
IN2
IN1
EN
IN2
EN1
V
MPC17511
C1L
For IG Test
OUTA
C1H
MPC17511
13V
C2L
OUTA
C2L
OUTB
C2H
C1L
C1H
A
VG
OUTB
C2H
100kHz
Fin and
20kHz
VG
GND
V
GND
Capacitors remove for IG Test.
Test Circuit F
Test Circuit G
7
MPC17511
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:MAR.08. 2002 REV.0.5
Freescale Semiconductor, Inc.
Precautions on Application
(1)When applying the gate voltage VG from an external source, be sure to connect it via a
resistor equal to or greater than RG=VG/0.02[ohm]. However, this resistance is unnecessary
if you are connecting a charge pump output from a SMARTMOS product.
VG < 14[V]
VG
RG > VG/0.02[ohm]
MPC17511
Freescale Semiconductor, Inc...
CG = 0.01[uF]
C2H
C1H
C2L
C1L
OPEN
(2)Switching from the state of active current loading to high-impedance mode, indactance load
and P.C.B. layout may induce over maximum ratings to a power supply pin. Zener diode or
capacitor at VM pin will protect kick back voltage(it depends on the indactance load).
The schottky diode at output pin will also protect it.
VM
VM
OUTA
OUTA
OUTB
OUTB
(3)Connect a capacitor of sufficient capacitance between the power supply and ground pins.
For all large-current paths, use sufficiently wide copper conductor patterns and route them
in the shortest distance possible.
(4)When using SMARTMOS products in your circuit design, make sure they are fully protected
against static charge.
8
MPC17511 :MAR.08. 2002 REV.0.5
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■ 16 ピン SVMFP 外形寸法図
D
D1
C
A部拡大図
θ
A
A1
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b
L
y
x
Z1
e
SPEC
MIN
TYP
MAX
A
*****
1.95
2.05
A1
0.10
0.15
0.20
b
C
0.25
0.30
0.35
0.18
0.20
0.25
D
*****
D1
5.20
5.25
5.45 MAX
5.30
e
0.60
0.65
0.70
E
5.25
5.30
5.35
He
7.70
7.90
8.10
L
0.45
0.60
0.75
L1
1.20
1.30
1.40
x
*****
*****
0.12
y
Z1
0.25
0.35
0.47
θ
0.0°
4.0°
9.8°
0.05
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L1
He
E
A
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
当社は、本書に記載した製品について、予告なく変更を加える権限を保有しています。
当社はここに記載した製品、回路の適用、使用に起因するいかなる責務を負うものではなく、また、当社の特許権または第三者の
権利に基づくライセンスを許諾するものでもありません。当社の製品は、外科的に人体に移植することを意図したシステムの構成
部品として、または、他の生命維持を意図した用途に、または、当社の製品の不具合により人体に危害を加えたり死に至らしめる
かもしれない状況が発生するような用途に使用するために、設計、意図または許可されているものではありません。購入者が万一
このような意図または許可されていない用途のために当社の製品を購入あるいは使用する場合、購入者は当社およびその役員、従
業者、子会社、関連会社、代理店に対し、直接または間接を問わず、当該使用に関連した傷害や死についてのすべての申し立て
(たとえ、当社が部品の設計や製造において不注意であったという主張であったとしても)から生ずるすべての請求、費用、損害、
および相当の弁護士費用を補償し、被害が及ばないようにするものとします。
SPS.
TSPG.
GAO
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