MOTOROLA MPS404A

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by MPS404A/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–35
Vdc
Collector – Base Voltage
VCBO
–40
Vdc
Emitter – Base Voltage
VEBO
–25
Vdc
Collector Current — Continuous
IC
–150
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/W
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–35
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–25
—
Vdc
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
ICBO
—
–100
nAdc
Emitter Cutoff Current
(VBE = –10 Vdc, IC = 0)
IEBO
—
–100
nAdc
Characteristic
OFF CHARACTERISTICS
2. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MPS404A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
(IC = –12 mAdc, VCE = –0.15 Vdc)
hFE
30
400
—
Collector – Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
VCE(sat)
—
—
–0.15
–0.2
Base – Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
VBE(sat)
—
—
–0.85
–1.0
fob
4.0
—
MHz
Cobo
—
20
pF
NORMAL MODE
INVERTED MODE
TJ = 25°C
ON CHARACTERISTICS
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Common–Base Cutoff Frequency
(IC = –1.0 mAdc, VCB = 6.0 Vdc)
Output Capacitance
(VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz)
VBC, BASE–COLLECTOR VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VEC , EMITTER–COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR–EMITTER VOLTAGE (mV)
–100
NORMAL MODE
INVERTED MODE
–80
TJ = 25°C
–60
VCE(sat) @ IC/IB = 10
–40
IC/IB = 2.0
–20
0
–1.0
VEC(sat) @ IE/IB = 2.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
IE, EMITTER CURRENT (mA)
–50 –70 –100
Figure 1. Collector–Emitter Voltage
2
–0.9
–0.82
–0.74
–0.66
VBE(sat) @ IC/IB = 2
VBC(sat) @ IE/IB = 2
VBE(on) @ VCE = –1.0 V
–0.58
–0.50
–1.0
–2.0 –3.0 –5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
IE, EMITTER CURRENT (mA)
–50 –70 –100
Figure 2. Base “On” Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS404A
NORMAL MODE
INVERTED MODE
10
200
TJ = 125°C
25°C
100
80
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
7.0
60
–55°C
40
30
20
5.0
25°C
–55°C
3.0
2.0
1.5
10
–1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
1.0
–1.0
–50 –70 –100
–5.0 –7.0 –10
–20 –30
–50 –70 –100
IE, EMITTER CURRENT (mA)
Figure 3. DC Current Gain @ VCE = –0.15 Vdc
Figure 4. DC Current Gain @ VEC = –0.15 Vdc
600
10
400
TJ = 125°C
7.0
TJ = 125°C
300
200
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
–2.0 –3.0
IC, COLLECTOR CURRENT (mA)
25°C
100
80
–55°C
60
25°C
5.0
–55°C
3.0
2.0
40
30
–1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
1.0
–1.0
–50 –70 –100
–0.5
TJ = 25°C
–50 –70 –100
–0.5
TJ = 25°C
–0.4
–0.4
–0.3
–5.0 –7.0 –10
–20 –30
IE, EMITTER CURRENT (mA)
Figure 6. DC Current Gain @ VEC = –1.0 Vdc
VEC , EMITTER–COLLECTOR VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. DC Current Gain @ VCE = –1.0 Vdc
–2.0 –3.0
IC = –2.0 mA
–10 mA
–50 mA
–0.3
IE = –0.5 mA –2.0 mA
–50 mA
–10 mA
–0.2
–0.2
–0.1
–0.1
0
–0.005 –0.01 –0.02
–0.05 –0.1 –0.2
–0.5
IB, BASE CURRENT (mA)
–1.0
–2.0
–5.0
Figure 7. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0
–0.05 –0.1
–0.2
–0.5 –1.0 –2.0
–5.0
IB, BASE CURRENT (mA)
–10
–20
–50
Figure 8. Emitter Saturation Region
3
MPS404A
70
50
20
NOTE: The dynamic resistance between the emitter and
NOTE: collector is measured with the device operated in
NOTE: the Inverted Mode.
TJ = 25°C
C, CAPACITANCE (pF)
rec(on), EMITTER–COLLECTOR “ON”
RESISTANCE (OHMS)
100
Ie = 100 µA RMS
f = 1.0 kHz
TJ = 25°C
IE = 0
30
20
7.0
Cob
5.0
Cib
10
3.0
7.0
5.0
–0.1
–0.5 –0.7 –1.0
–0.2 –0.3
–2.0 –3.0
2.0
–0.05 –0.1
–5.0 –7.0 –10
–0.2
–0.5
–1.0 –2.0
–5.0
–10
IB, BASE CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Emitter–Collector “On” Resistance
Figure 10. Capacitance
2.0 k
–20
–50
1.0 k
VCC = –10 V
IC/IB = 0
TJ = 25°C
1.0 k
700
500
VCC = –10 V
IC/IB = 0
IB1 = IB2
TJ = 25°C
700
ts
500
300
t, TIME (ns)
t, TIME (ns)
10
tr
200
100
70
50
300
tf
200
td @ VBE(off) = –1.4 V
30
20
–1.0
–2.0 –3.0 –5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
–50 –70 –100
Figure 11. Turn–On Time
RBB
1.0 k
Vin
–50 –70 –100
Figure 12. Turn–Off Time
VCC
(–6.0 V)
1.0 k
TO SCOPE
RC (560 Ω)
C1
RB
(0–250 pF)
10 k
RB*
(5.6 kΩ)
INPUT Vin
51
Vin
(Volts)
VBB
(Volts)
ton, td and tr
–12
+1.4
toff, ts and tf
+20.6
–11.6
Voltages and resistor values shown
are for IC = 10 mA. IC/IB = 10 and IB1
= IB2. Resistor values changed to obtain curves in Figures 11 and 12.
Figure 13. Switching Time Test Circuit
4
–2.0 –3.0 –5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
VCC = –10 V
VBB
0.1 µF
100
–1.0
MEASUREMENT PROCEDURE
C1 is increased until the toff time of
the output waveform is decreased to
0.2 µs, QS is then calculated by
QS = C1 Vin.
QS3 or QS7 by B–Line Electronics
or equivalent may also be used.
OUTPUT
VOLTAGE WAVEFORMS
0
6.0 V
Vout
6.0 V
>5.0 µs
Vin
tr, tf < 15 ns
10%
toff
Figure 14. Stored Base Charge Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS404A
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
5
MPS404A
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6
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS404A/D