Order this document by MPS3638A/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage VCES –25 Vdc Collector – Base Voltage VCBO –25 Vdc Emitter – Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Max Unit RqJA(1) 200 °C/W RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = –100 mAdc, VBE = 0) V(BR)CES –25 — Vdc Collector – Emitter Sustaining Voltage(2) (IC = –10 mAdc, IB = 0) VCEO(sus) –25 — Vdc Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO –25 — Vdc Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) V(BR)EBO –4.0 — Vdc — — –0.035 –2.0 OFF CHARACTERISTICS mAdc Collector Cutoff Current (VCE = –15 Vdc, VBE = 0) (VCE = –15 Vdc, VBE = 0, TA = –65°C) ICES Emitter Cutoff Current (VEB = –3.0 V, IC = 0) IEBO — –35 nA IB — –0.035 mAdc Base Current (VCE = –15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. v v (Replaces MPS3638/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 MPS3638A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 80 100 100 20 — — — — — — –0.25 –1.0 — –0.80 –1.1 –2.0 150 — — 10 — 25 — 2000 — 15 100 — — 1.2 td — 20 ns tr — 70 ns ts — 140 ns Fall Time ( CC = –10 Vdc,, IC = –300 mAdc,, (V IB1 = –30 mAdc, IB2 = –30 mAdc) tf — 70 ns Turn–On Time (IC = –300 mAdc, IB1 = –30 mAdc) ton — 75 ns Turn–Off Time (IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc) toff — 170 ns ON CHARACTERISTICS(2) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –300 mAdc, VCE = –2.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz) fT Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre Small–Signal Current Gain (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe MHz pF pF kΩ X 10– 4 — mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = –10 Vdc Vdc, IC = –300 mAdc mAdc, IB1 = –30 mAdc) 2. Pulse Test: Pulse Width 2 v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638A SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V – 30 V 200 Ω < 2 ns 200 Ω < 20 ns +2 V +14 V 0 0 1.0 kΩ – 16 V 1.0 kΩ CS* < 10 pF 10 to 100 µs, DUTY CYCLE = 2% –16 V CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time TRANSIENT CHARACTERISTICS 100°C 25°C 30 10 7.0 5.0 VCC = 30 V IC/IB = 10 Ceb 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 Figure 3. Capacitances Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.1 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 4. Charge Data 3 MPS3638A TRANSIENT CHARACTERISTICS (Continued) 100°C 25°C 100 100 IC/IB = 10 70 70 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 t r , RISE TIME (ns) t, TIME (ns) VCC = 30 V IC/IB = 10 50 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 300 500 200 t s′, STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638A SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ 6 4 2 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 IC = 50 µA 100 µA 500 µA 1.0 mA 6 0 0.5 1.0 2.0 5.0 10 20 50 50 100 100 200 500 1k 2k 5k 10 k 20 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50 k h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from the 2N4402 line, and the same units were hfe and other “h” parameters for this series of transistors. To used to develop the correspondingly–numbered curves on obtain these curves, a high–gain and a low–gain unit were each graph. 100 k 700 50 k hfe , CURRENT GAIN 500 300 200 100 2N4402 UNIT 1 2N4402 UNIT 2 70 50 hie , INPUT IMPEDANCE (OHMS) 1000 2N4402 UNIT 1 2N4402 UNIT 2 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 Figure 10. Current Gain Figure 11. Input Impedance 5.0 7.0 10 500 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 0.2 IC, COLLECTOR CURRENT (mAdc) 20 10 5.0 2N4402 UNIT 1 2N4402 UNIT 2 2.0 1.0 0.5 0.2 0.1 0.1 0.1 IC, COLLECTOR CURRENT (mAdc) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 20 10 5.0 2N4402 UNIT 1 2N4402 UNIT 2 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data 5.0 7.0 10 5 MPS3638A STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 qVC for VCE(sat) 0.5 1.0 1.5 qVS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 16. “On” Voltages 6 500 2.5 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 17. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638A PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. 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