Order this document by BF844/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 400 Vdc Collector – Base Voltage VCBO 450 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 300 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 400 — Vdc Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) V(BR)CES 450 — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 450 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 — Vdc Collector Cutoff Current (VCB = 400 Vdc, IE = 0) ICBO — 0.1 µAdc Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) ICES — 500 nAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO — 0.1 µAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 BF844 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 40 50 45 20 — 200 — — — — — 0.4 0.5 0.75 Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) hFE — Collector – Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — 0.75 High Frequency Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) |hfe| 1.0 — Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Cob — 6.0 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 110 pF Turn–On Time (VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc) ton — 0.6 µs Turn–Off Time (VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc) toff — 10 µs Vdc Vdc DYNAMIC CHARACTERISTICS 1. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data 160 TA = 125°C hFE, DC CURRENT GAIN 140 120 VCE = 10 V 100 25°C 80 60 40 –55°C 20 1.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 2.0 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) BF844 200 300 0.5 0.4 IC = 1.0 mA IC = 10 mA 0.3 TA = 25°C 0.2 0.1 0 10 Figure 1. DC Current Gain 30 100 10 k 50 k 1000 TA = 25°C IC, COLLECTOR CURRENT (mA) 1.0 ms VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 1.0 k 3.0 k 300 IB, BASE CURRENT (µA) Figure 2. Collector Saturation Region 1.0 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 300 200 100 1.0 30 3.0 10 IC, COLLECTOR CURRENT (mA) 0.3 100 10 1.0 1.0 300 Figure 3. On Voltages CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE ≤ 10% 2.0 10 20 50 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) 200 500 10 |h fe |, SMALL–SIGNAL CURRENT GAIN Cib 50 20 Cob 5.0 TA = 25°C f = 1.0 MHz 2.0 1.0 0.3 0.5 1.0 s Figure 4. Active Region Safe Operating Area 100 10 TC = 25°C TA = 25°C 100 µs 20 2.0 0 0.1 C, CAPACITANCE (pF) IC = 50 mA 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Figure 5. Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data 3.0 VCE = 10 V f = 10 MHz TA = 25°C 2.0 1.5 1.0 0.1 0.2 0.3 1.0 3.0 10 IC, COLLECTOR CURRENT (mA) 30 100 Figure 6. High Frequency Current Gain 3 BF844 10 Vin +9.7 V t, TIME ( µs) 5.0 PW = 50 µs DUTY CYCLE = 2.0% 2.0 0 1.0 –4.0 V 0.5 0.2 0.1 1.0 VCC = 150 V IC/IB = 10 TA = 25°C VBE(off) = 4.0 Vdc VCC tr RL td 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 Vout 100 Vin RB CS ≤ 4.0 pF* Figure 7. Turn–On Switching Times and Test Circuit 10 Vin 5.0 +10.7 V t, TIME ( µs) ts PW = 50 µs DUTY CYCLE = 2.0% 2.0 1.0 0.5 0.2 tf VCC = 150 V IC/IB = 10 TA = 25°C –11.4 V VCC RL 0.1 1.0 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 100 Vout Vin RB CS ≤ 4.0 pF* Figure 8. Turn–Off Switching Times and Test Circuit * Total Shunt Capacitance or Test Jig and Connectors. 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data BF844 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 BF844 Motorola reserves the right to make changes without further notice to any products herein. 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