Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.2 dB Efficiency — 60% • 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. 470 – 860 MHz, 75 W, 32 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–05, STYLE 1 NI–360 MRF373AR1 CASE 360C–05, STYLE 1 NI–360S MRF373ASR1 MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 70 Vdc Gate–Source Voltage VGS – 0.5, +15 Vdc PD 197 1.12 278 1.59 Watts W/°C Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Total Device Dissipation @ TC = 25°C Derate above 25°C MRF373AR1 MRF373ASR1 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model MRF373AR1 MRF373ASR1 M2 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF373AR1 MRF373ASR1 Symbol Max Unit RθJC 0.89 0.63 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF373AR1 MRF373ASR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 70 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.3 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) VDS(on) — 0.41 0.45 Vdc Input Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Ciss — 98.5 — pF Output Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Coss — 49 — pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Crss — 2 — pF Common Source Power Gain (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz) Gps 16.5 18.2 — dB Drain Efficiency (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz) η 56 60 — % Load Mismatch (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz, Load VSWR at 10:1 at All Phase Angles) ψ OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID =1 µA) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS (50 ohm system) MRF373AR1 MRF373ASR1 2 No Degradation in Output Power MOTOROLA RF DEVICE DATA CUT OUT AREA Figure 1. MRF373AR1/ASR1 Narrowband Test Circuit Component Layout Table 1. MRF373AR1/ASR1 Narrowband Test Circuit Component Layout Designations and Values Designation Description C1, C2 18 pF Chip Capacitors, B Case, ATC C3 12 pF Chip Capacitor, B Case, ATC C4 1.8 pF Chip Capacitor, B Case, ATC C5, C10 51 pF Chip Capacitors, B Case, ATC C6 0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS) C7 15 pF Chip Capacitor, B Case, ATC C8 10 pF Chip Capacitor, B Case, ATC C9 2.7 pF Chip Capacitor, B Case, ATC C11 0.5 pF Chip Capacitor, B Case, ATC C12 1000 pF Chip Capacitor, B Case, ATC C13 39 pF Chip Capacitor, B Case, ATC C14, C15 470 pF Chip Capacitors, B Case, ATC C16 2.2 mF, 100 V Chip Capacitor, Vishay #VJ3640Y225KXBAT C17 10 mF, 35 V Tantalum Capacitor, Kemet #T491D106K35AS L1A 12 nH, Coilcraft #A04T R1, R2 390 Ω, 1/2 Ω Chip Resistors, Vishay Dale (2010) R3 1 kΩ, 1/2 Ω Chip Resistor, Vishay Dale (2010) PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX–0300–55), Height 30 mils, εr = 2.55 MOTOROLA RF DEVICE DATA MRF373AR1 MRF373ASR1 3 TYPICAL CHARACTERISTICS $ !-"#)4% ( )* 0 ( 23 . ( / / / / / '+,! -" #-% - Figure 2. Power Gain versus Output Power ( )* '+, ( - #-% . ( / η $ η!""1#5% $ !-"#)4% ! "#)4% 0! "."1 #23% & ' !"#$% ' ! & !"#$% Figure 3. Performance in Narrowband Circuit ! " " #% Figure 4. Capacitance versus Voltage MRF373AR1 MRF373ASR1 4 MOTOROLA RF DEVICE DATA 0 ( 23 =' ( Ω =&6 0 ( 23 0 ( 23 => 0 ( 23 ( ! . ( /! '+, ( - - Zin f MHz Zin Ω ZOL* Ω 845 0.58 + j0.29 1.60 – j0.07 860 0.56 + j0.11 1.65 – j0.22 875 0.56 – j0.06 1.79 – j0.38 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ',< => :7 *8'6 ?7) '6 ,7)'00 ?,:6 97&6! '+,$+, $':! )7&6 00&*&6*@ 76) &6,/')+A7,&'6 )&,',&'6B 6$+, 7,*8&69 ,:'; +,$+, 7,*8&69 ,:'; &* 6) , Z in Z * OL Figure 5. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF373AR1 MRF373ASR1 5 NOTES MRF373AR1 MRF373ASR1 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q 777 2X G B 4 "< B "" " "" " " 1BCB B "< 2B B " 2 "" B #B% -1 D" 41B 1 3 B 2 (FLANGE) D ??? K 2X 2X 4 R (LID) *** *** N (LID) 4 4 F H C E S (INSULATOR) T 777 SEATING PLANE ??? M (INSULATOR) A 4 CASE 360B–05 ISSUE F NI–360 MRF373AR1 A 4 DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX B B B B B B B B B B B B B4 B B B B B B B B B B B B B B B" B" B" MILLIMETERS MIN MAX B B B B B B B B B B B B B 4 B B B B B B B B B B B B B B B" B" B " 1" < B B " B " A A (FLANGE) B 1 "< B "" " "" " " 1BCB B "< 2B B " 2 "" B #B% -1 D" 41B 2 B (FLANGE) 2X 2X K 4 D ??? R (LID) *** N (LID) *** 4 4 F H E C S (INSULATOR) PIN 3 T M SEATING PLANE 777 4 (INSULATOR) ??? 4 MOTOROLA RF DEVICE DATA CASE 360C–05 ISSUE D NI–360S MRF373ASR1 DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX B B B B B B B B B B B B B B B B B B B B B B B B B" B" B" MILLIMETERS MIN MAX B B B B B B B B B B B B B B B B B B B B B B B B B" B" B " 1" < B B " B " MRF373AR1 MRF373ASR1 7 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF373AR1 MRF373ASR1 8 ◊ MRF373A/D MOTOROLA RF DEVICE DATA