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SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
1.0 GHz, 2 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make
it ideal for large–signal, common–source amplifier applications in 26 volt base
station equipment.
• Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
CASE 978–03
PLASTIC
PFP–16
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• Available in Tape and Reel. R2 Suffix = 1,500 Units
per 16 mm, 13 inch Reel.
PIN CONNECTIONS
NOTE: Exposed backside flag is source
terminal for transistors.
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Dissipation Per Transistor @ TC = 25°C
PD
4
Watts
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Max
Unit
RθJC
12
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case, Single Transistor
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Rating
3
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA
RF DEVICE DATA
Motorola,
Inc. 2002
MRF9002R2
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 µAdc)
VGS(th)
2.4
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 25 mAdc)
VGS(Q)
3
—
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.1 Adc)
VDS(on)
—
0.3
—
Vdc
Gps
15
18
—
dB
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
η
35
50
—
%
Input Return Loss @ P1dB
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
IRL
—
–15
–9
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
P1dB
34
37
—
dBm
ON CHARACTERISTICS
FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ P1dB
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA,
f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
MRF9002R2
2
Ψ
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
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#
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Figure 1. MRF9002R2 Broadband Test Circuit Schematic
Table 1. MRF9002R2 Broadband Test Circuit Component Designations and Values
Designators
Description
C1–C6
33 pF Chip Capacitors (0805)
C7–C12
1.0 µF, 35 V Tantalum Capacitors, B Case, Kemet
C13
8.2 pF Chip Capacitor (0805)
C14, C15
10 pF Chip Capacitors (0805)
C16, C17
2.7 pF Chip Capacitors (0805)
C18
3.3 pF Chip Capacitor (0805)
L1–L6
12 nH Chip Inductors (0805)
R1–R3
0 W Chip Resistors (0805)
Z1, Z11
1.16 x 28.5 mm Microstrip
Z2, Z7, Z12
0.65 x 5.6 mm Microstrip
Z3, Z8, Z13
0.65 x 2.6 mm Microstrip
Z4, Z14
1.16 x 19.5 mm Microstrip
Z5, Z15
1.16 x 17.5 mm Microstrip
Z6
1.16 x 12.9 mm Microstrip
Z9
1.16 x 27.2 mm Microstrip
Z10
1.16 x 4.3 mm Microstrip
PCB
Etched Circuit Board
Raw PCB Material
Rogers RO4350, 0.020″, 2.5″, x 2.5″, er = 3.5
Bedstead
Copper Heatsink
MOTOROLA RF DEVICE DATA
MRF9002R2
3
!"!
"!
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Pin 1
!"!
%
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+(,
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Figure 2. MRF9002R2 Broadband Test Circuit Component Layout
MRF9002R2
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
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1,4
-
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4
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1,4
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Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
Figure 6. Intermodulation Distortion versus
Output Power
"./9 !"! ": 1,4 ""
$9 $! $!""%; %$
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1,2
Figure 5. Power Gain and Intermodulation Distortion
versus Supply Voltage
Figure 4. Power Gain versus Output Power
Figure 3. Output Power and Power Gain
versus Input Power
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1,
4
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4
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1,2
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1,
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1,
MRF9002R2
5
--
9 "(
--
<--
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Figure 9. Capacitance versus Drain Source Voltage
MRF9002R2
6
MOTOROLA RF DEVICE DATA
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5 0 ')*
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5 0 ')*
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f
MHz
ZOL*
Ω
Zin
Ω
925
4.5 – j13.3
23.4 – j9.2
960
4.3 – j15.3
23.2 – j10.4
Zin
985
4.1 – j15.8
23.0 – j11.1
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
0 9 3 0 49 "./ 0 : ""
f
MHz
ZOL*
Ω
Zin
Ω
925
6.0 – j12.3
19.7 – j27.8
960
5.9 – j14.3
22.0 – j23.9
985
5.8 – j16.5
22.5 – j25.4
/>
= Complex conjugate of source impedance.
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<9 1<@6 55262B @61 6/<41.8@/6 1-/</6
6./
'@/2=67
/<C
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'@/2=67
/<C
+2
!61< -/
0 9 3 0 49 "./ 0 : ""
f
MHz
ZOL*
Ω
Zin
Ω
925
4.3 – j12.2
23.1 – j6.5
960
4.3 – j14.0
22.8 – j8.4
985
3.9 – j15.9
22.6 – j9.3
Figure 10. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF9002R2
7
NOTES
MRF9002R2
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9002R2
9
NOTES
MRF9002R2
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
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DETAIL Y
CASE 978–03
ISSUE B
PLASTIC
PFP–16
MOTOROLA RF DEVICE DATA
MRF9002R2
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF9002R2
12
◊
MRF9002R2/D
MOTOROLA RF DEVICE
DATA