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by MRF21030/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
• Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
2.2 GHz, 30 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
NI–400
MRF21030R3
CASE 465F–03, STYLE 1
NI–400S
MRF21030SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
2.1
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA
RF DEVICE DATA
Motorola,
Inc. 2002
MRF21030R3 MRF21030SR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
13
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
—
–30
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
—
–13
—
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
12
13
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
31
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
–30
–27.5
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
–13
–9
dB
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µA)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21030R3 MRF21030SR3
2
MOTOROLA RF DEVICE DATA
B1, B2
C1
C2
C3
C4
C5, C12
C6, C13
C7, C8
C9
C10
C11
L1, L2
R1, R2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Board
Short Ferrite Beads
1 pF Chip Capacitor
4.7 pF Chip Capacitor
0.5 pF Chip Capacitor
3.9 pF Chip Capacitor
0.1 µF Chip Capacitors
470 µF, 63 V Electrolytic Chip Capacitors
0.3 pF Chip Capacitors
3.6 pF Chip Capacitor
22 µF Tantalum Chip Capacitor
5.1 pF Chip Capacitor
12.5 nH Inductors
12 Ω Chip Resistors (1206)
0.153″ x 0.087″ Microstrip
0.509″ x 0.156″ Microstrip
0.572″ x 0.087″ Microstrip
0.509″ x 0.232″ Microstrip
0.277″ x 0.143″ Microstrip
0.200″ x 0.305″ Microstrip
0.200″ x 0.511″ Microstrip
0.510″ x 0.328″ Microstrip
0.608″ x 0.081″ Microstrip
0.030″ Glass Teflon, TLX8-0300
Taconix (εr = 2.55)
Figure 1. MRF21030 Test Circuit Schematic
!"
+
+
CUT OUT AREA
"#
MRF 21030
Rev 1
MRF21030
Rev–1
Figure 2. MRF21030 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21030R3 MRF21030SR3
3
/
/
% &' ( % )*+' , % -!
./0 10230-0(' 456 0 "72&89
/
73
/
η
/
1
=' *,*# )156+
/
% &' , % -!' = % 156
@20A "72&89 )@20A 2.8(@+B
? 156 ) 156+
/
!
/
/
/
/
?
1':*1!:":)&+
1':*1!:":)&+
/
-!
-!
-!
-!
-!
(' * ) !"+ *
/
(' * ) !" !>9?+ 1!
/
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
/
/
/
73
η
Figure 3. Class AB Broadband Circuit Performance
% &' = % 156
./0 10230-0('
/
456 0 "72&89
/
0
% &' , % -!' = % 156
./0 10230-0('
456 0 "72&89
/
/
(@ 0
/
(@ 0
/
/
?
Figure 5. Intermodulation Distortion
versus Output Power
(' * ) !"+ *
Figure 6. Intermodulation Distortion Products
versus Output Power
/
?
-!
73 ': *:!:)+
73 ': *:!:)+
/
-!
-!
-!
-!
/
73
?
(' * ) !"+ *
Figure 7. Power Gain versus Output Power
MRF21030R3 MRF21030SR3
4
/
1
/
?
% &' = % 156
./0 10230-0(' 456 0 "72&89
/
/
( % )*+
, % -!' = % 156
./0 10230-0(' 456 0 "72&89
/
/
' ! !* )"+
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MOTOROLA RF DEVICE DATA
1':*1!:":)&+
/
!<!*:5!*: *:!:)+
/
η':!:**#:);+': 73 ': *:!:)+
'::*:"":)+
1':*1!:":)&+
η':!:**#:);+': 73 ': *:!:)+
TYPICAL CHARACTERISTICS
8
= % 156
C
= % 156
% Ω
= % 156
= % 156
% ' , % -!' ( % f
MHz
*
ZOL*
Ω
Zin
Ω
2110
15.3 + j9.4
3.7 + j0.78
2140
14.6 + j9.4
3.4 + j0.37
2170
14.3 + j8.8
3.0 – j0.13
Zin
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
(0B
C .23 &@30 D230 (20==3 D0(.00 928' (7(
7.0' 28 0==8&80&E 2 8(0-A2(8 83((8?
7(
12(&@89
0(.4
(7(
12(&@89
0(.4
0>8&0
0 03(
Z
in
Z
*
OL
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF21030R3 MRF21030SR3
5
NOTES
MRF21030R3 MRF21030SR3
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
2X
DDD
G
Q
1
!
1
1
*"B
? 1*"B 5?
? ** 1*"" ! *!*"
* !"1* #
?1' ?
? 1*" 5 " 1*!"* ? )?+
! !# 1 !F!* #?
B
1
3
2X K
B
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
2
2X D
DDD
1
!
1
1
N (LID)
&&&
1
!
1
&&&
1
222
1
!
1
1
A
1
F
T
M
(INSULATOR)
1
R (LID)
C
E
!
1
S
(INSULATOR)
SEATING
PLANE
222
!
1
H
1
1
INCHES
MIN
MAX
?
?
?
?
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?
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?
?
?
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?
?
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?
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?:"
?
:"
?
:"
MILLIMETERS
MIN
MAX
?
?
?
?
?
?
?
?
?
?
?
?
?:"
?
?
?
?
?
?
?
?
?
?
?
:"
?:"
?
:"
"#* B
? !
? !*
? "*
A
CASE 465E–03
ISSUE D
NI–400
MRF21030R3
2X D
DDD 1 !
1
1
*"B
? 1*"B 5?
? ** 1*"" ! *!*"
* !"1* #
?1/
?
? 1*" 5 " 1*!"* ? )?+ ! !#
1 !F!* #?
1
2
2X K
R
&&&
1
!
1
N
E
(LID)
(LID)
&&&
1
1
!
1
1
1
1
F
C
3
H
A
T
A
(FLANGE)
M
222
1
!
1
(INSULATOR)
S
SEATING
PLANE
(INSULATOR)
222
B
1
!
B
(FLANGE)
1
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?:*
?
:*
?
:*
MILLIMETERS
MIN
MAX
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
:*
?:*
?:*
"#* B
? !
? !*
? "*
CASE 465F–03
ISSUE B
NI–400S
MRF21030SR3
MOTOROLA RF DEVICE DATA
MRF21030R3 MRF21030SR3
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
How to reach us:
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF21030R3 MRF21030SR3
8
◊
MOTOROLA RF DEVICE MRF21030/D
DATA