Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.25 MHz — –55 dBc @ 12.5 kHz BW 2.25 MHz — –55 dBc @ 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.5 dB Efficiency — 17% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 2.0 GHz, 30 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF19030R3 CASE 465F–03, STYLE 1 NI–400S MRF19030SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 83.3 0.48 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2.1 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF19030R3 MRF19030SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) VGS(Q) 2 3.3 4.5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 2 — S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss — 98.5 — pF Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 37 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 1.3 — pF Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Gps — 13 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) η — 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IRL — –13 — dB Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 12 13 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) η 33 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IRL — –13 –9 dB Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µA) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19030R3 MRF19030SR3 2 MOTOROLA RF DEVICE DATA B1 – B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 – L4 R1 – R7 Z1 Z2 Short Ferrite Beads 10 pF Chip Capacitors, B Case 470 µF, 35 V Electrolytic Capacitors 0.1 µF Chip Capacitors, B Case 5.1 pF Chip Capacitors, B Case 22 µF Tantalum Chip Capacitor 0.4 – 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Ω Chip Resistors (0805) 0.080″ x 0.595″ Microstrip 0.080″ x 0.600″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate 0.080″ x 0.480″ Microstrip 0.325″ x 0.280″ Microstrip 0.510″ x 0.200″ Microstrip 0.510″ x 0.200″ Microstrip 0.325″ x 0.280″ Microstrip 0.080″ x 0.480″ Microstrip 0.080″ x 0.530″ Microstrip 0.080″ x 0.671″ Microstrip 0.030″ x 3.00″ x 5.00″ Glass Teflon, Arlon Figure 1. MRF19030 Test Circuit Schematic Figure 2. MRF19030 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19030R3 MRF19030SR3 3 6 η 6 7 *8 / 7 9! 123 7 ) $"& :161; <(2=9;3 >,0 1; 4'<8?;5 6 '( 6 - "/"# $,0& 6 6 9! 6 9! 9! 6 9! 6 9! 6 123 )" $)!4& " '( 6 ! @<;;A( 1=:<=* B !B !B6 4#B 6 9! '( )"!$*& '( )"!$*& 7 *8 / 7 9! - 7 ,0 :161; <(2=9;3 >,0 1; 4'<8?;5 6 =* =*= 6 6 3@ =*= 3@ =*= 6 6 6 9! 9! 123 )" $)!4& " 9! 6 - 7 ,0 / 7 9! 123 7 ) $"& :161; <(2=9;3 >,0 1; 4'<8?;5 6 6 '( 6 6 6 6 7 *8 - 7 ,0 :161; <(2=9;3 >,0 1; 4'<8?;5 123 )" $)!4& " Figure 7. Power Gain versus Output Power MRF19030R3 MRF19030SR3 4 6 Figure 6. Intermodulation Distortion Products versus Output Power 9! 123 )" $)!4 !5& ! Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 6 Figure 5. Intermodulation Distortion versus Output Power 6 η ,0 " !4$*8& " !4$*8& 6 6 6 ,0 >,0 6 7 *8 - 7 ,0 :161; <(2=9;3 >,0 1; 4'<8?;5 6 Figure 3. Class AB Broadband Circuit Performance 6 6 7 *8 / 7 9! - 7 ,0 @<;;A 4'<8?;5 $@<;;A <;*:?*3@&B >,0 $ >,0& ,0 $ >,0& ,0 $ ,0& 6 6 ! !" $ 4& Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA RF DEVICE DATA " !4$*8& !+!",!" )"!$*& 6 η !""#$%& '( )"!$*& " 44$*& " !4$*8& η !""#$%& '( )"!$*& TYPICAL CHARACTERISTICS 1 7 Ω ?; C - 7 ,0 - 7 ,0 - 7 ,0 - 7 ,0 7 / 7 9! 123 7 ) " f MHz ZOL* Ω Zin Ω 1930 10.57 + j7.69 5.81 + j5.01 1960 10.54 + j7.43 5.84 + j4.67 1990 10.47 + j7.21 5.84 + j4.35 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. 13B C :<( 8@1(; D<(* 1; 3=<*1--( D3:; 5<?; 123'23 '1:= *=<?; --?8?;8E <;* ?;3=91*2A<3?1; *?(31=3?1; ;'23 <38@?;5 3:1=> 23'23 <38@?;5 3:1=> ?8 ;*= (3 Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF19030R3 MRF19030SR3 5 NOTES MRF19030R3 MRF19030SR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X Q DDD G ! "4B "4B , "" "44 ! "!"4 " !4" # "4 , 4 "!4" $& !)!# !F!" # B 1 3 2X K DIM A B C D E F G H K M N Q R S aaa bbb ccc B 2 2X D DDD ! N (LID) 888 ! 888 <<< ! A F T M (INSULATOR) R (LID) C E ! S (INSULATOR) SEATING PLANE <<< ! H INCHES MIN MAX 4 4 4 4 MILLIMETERS MIN MAX 4 4 4 4 4# " B ! !" 4" A CASE 465E–03 ISSUE D NI–400 MRF19030R3 2X D DDD ! "4B "4B , "" "44 ! "!"4 " !4" #6 "4 , 4 "!4" $& !)!# !F!" # 1 2 2X K 888 ! N E R (LID) (LID) 888 C ! F 3 A T A (FLANGE) M <<< ! SEATING PLANE (INSULATOR) H S (INSULATOR) <<< ! DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX " " " MILLIMETERS MIN MAX " " " 4# " B ! !" 4" B B (FLANGE) CASE 465F–03 ISSUE B NI–400S MRF19030SR3 MOTOROLA RF DEVICE DATA MRF19030R3 MRF19030SR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19030R3 MRF19030SR3 8 ◊ MOTOROLA RF DEVICE MRF19030/D DATA