Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Lateral MOSFETs The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz. • GSM and GSM EDGE Performance, Full Frequency Band (1805–1880 MHz) Power Gain – 15 dB (Typ) @ 85 Watts CW Efficiency – 52% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. GSM/GSM EDGE 1.8 – 1.88 GHz, 85 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF18085A, MRF18085AR3 CASE 465A–06, STYLE 1 NI–780S MRF18085ALSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 273 1.56 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 0.64 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Typical) M3 (Typical) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF18085A MRF18085AR3 MRF18085ALSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.15 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 6.0 — S Crss — 3.6 — pF Common–Source Amplifier Power Gain @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Gps 13.5 15 — dB Drain Efficiency @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) η 48 52 — % Input Return Loss @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) IRL — –12 –9 dB Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) P1dB 83 90 — Watts Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch consistency. MRF18085A MRF18085AR3 MRF18085ALSR3 2 MOTOROLA RF DEVICE DATA C1, C3, C6, C7 C2 C4 C5, C8 C9 C10 R1, R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 PCB Connectors 10 pF Chip Capacitors, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 10 mF, 35 V Tantalum Capacitor, AVX 1 nF Chip Capacitors, B Case, ATC 220 mF, 63 V Electrolytic Capacitor, Radial, Philips 0.3 pF Chip Capacitor, B Case, ATC 10 kW, 1/4 W Chip Resistors (1206) 1.0 kW, 1/4 W Chip Resistor (1206) 0.671″ x 0.087″ Microstrip 0.568″ x 0.087″ Microstrip 0.500″ x 0.098″ Microstrip Shorted Stub 0.610″ x 00.118″ Microstrip 0.331″ x 1.153″ Microstrip 0.063″ x 1.153″ Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 0.8 mm Thickness “N” Type, Macom 3052–1648–10 Figure 1. 1.80 – 1.88 GHz Test Fixture Schematic CUT OUT AREA MRF18085A C–PP–02–01–2–Rev0 Figure 2. 1.80 – 1.88 GHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 3 TYPICAL CHARACTERISTICS - + .% .% ' (( "#(%($)*& ' (( "#(%($)*& + ), / + 012 + _ .% .% ' (( "#(%($)*& + ), - + .% / + 012 _ 34 + " " + ), - + .% + _ " 6 " "# $"%& / #-#5 $012& Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Frequency ' 8 " ' 8 " 7 7 7 + ), - + .% / + 012 + _ 7 9 8 " 7 9 8 " + ), - + .% + _ 7 7 ' 9 (#(9 ($)*& ' (( "#(%($)*& Figure 4. Power Gain versus Output Power _ Figure 3. Power Gain versus Output Power 6 + "# $"%& + _ - + .% / + 012 + _ "# $"%& ' (( "#(%($)*& ( ( "#($"%& η 6 / #-#5 $012& "# $"%& Figure 7. Power Gain versus Frequency Figure 8. Power Gain and Efficiency versus Output Power MRF18085A MRF18085AR3 MRF18085ALSR3 4 η (%(##5($:& MOTOROLA RF DEVICE DATA + Ω ',; / + 012 / + 012 <) / + 012 / + 012 + - + .% + " " f MHz Zload Ω Zsource Ω 1710 1.13 + j3.62 1.79 + j2.88 1785 1.61 + j4.23 1.82 + j3.15 1805 1.69 + j4.34 1.90 + j2.66 1880 2.83 + j5.25 2.09 + j2.77 1930 3.00 + j5.18 2.01 + j2.44 1960 4.39 + j4.97 2.01 + j2.57 1990 6.59 + j4.74 1.79 + j2.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. 0,=34> ;?@ ;A3,; 4); ;' 4 0,=34> ;?@ Z source Z load Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 5 NOTES MRF18085A MRF18085AR3 MRF18085ALSR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G Q DDD 2X 1 % 0 0 * 0 #B 6 0# % 9#% # % 56076 6 99 0# B 16 6 #9## 6 0# 1 0#%# 6 $6& %"%5 0 %C%# * 56 3 B K 2 (FLANGE) D DDD % 0 * 0 0 M R (INSULATOR) DDD N 0 % 0 * 0 0 ,,, 0 % 0 0 % 0 ,,, * S (LID) 0 % 0 * (LID) 0 (INSULATOR) * 0 H C F E T A A SEATING PLANE CASE 465–06 ISSUE F NI–780 MRF18085A, MRF18085AR3 (FLANGE) 2X 2 B K (FLANGE) D DDD 0 % * 0 N 0 (LID) ,,, M R 0 % 0 * 0 ,,, 0 % 0 % 0 S (INSULATOR) DDD 0 * 0 0 % 0 (LID) * 0 (INSULATOR) * 0 H C 3 F E A T A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE MILLIMETERS MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6(* 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6(# 6(# 6(# #B 6 0# % 9#% # % 56076 6 99 0# B 16 6 #9## 6 0# 1 0#%# 6 $6& %"%5 0 %C%# * 56 4X Z (LID) 1 INCHES MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6(* 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6(# 6(# 6(# 59# B 6 % 6 %# 6 # 4X U (FLANGE) B DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465A–06 ISSUE F NI–780S MRF18085ALSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 777 6 777 6 6(# 6(# 6(# MILLIMETERS MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 777 6 777 6 6(# 6(# 6(# 59# B 6 % 6 %# 6 # MRF18085A MRF18085AR3 MRF18085ALSR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors MRF18085A MRF18085AR3 MRF18085ALSR3 ◊ 8 MOTOROLA RF DEVICE DATA MRF18085A/D